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    Toshiba America Electronic Components 2SA1832FT-GR(LTO,F

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    Quest Components 2SA1832FT-GR(LTO,F 45,820
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    2SA1832F Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1832F Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: ESM; XJE016 JEITA: SC-89; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC4738F; DC Current Gain hFE, min: (min 70) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50) Original PDF
    2SA1832F Unknown PNP transistor Scan PDF
    2SA1832F Toshiba Silicon PNP epitaxial type transistor for audio frequency general purpose amplifier applications Scan PDF
    2SA1832F Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1832F-GR Toshiba 2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1832FGR Toshiba Silicon PNP Transistor Scan PDF
    2SA1832FT Toshiba Original PDF
    2SA1832FT Toshiba PNP transistor Original PDF
    2SA1832FT-GR Toshiba 2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1832FTGR Toshiba Silicon PNP Epitaxial Type (PCT process) Transistor Original PDF
    2SA1832FTY Toshiba Silicon PNP Epitaxial Type (PCT process) Transistor Original PDF
    2SA1832FT-Y Toshiba 2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1832FV Toshiba Transistor Silicon PNP Epitaxial Original PDF
    2SA1832FV Toshiba 2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1832FV-GR Toshiba 2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1832FV-Y Toshiba 2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1832F-Y Toshiba 2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1832FY Toshiba Silicon PNP Transistor Scan PDF

    2SA1832F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1832F

    Abstract: 2SC4738F
    Text: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1832F 2SC4738F 2SA1832F 2SC4738F

    2SA1832FT

    Abstract: 2SC4738FT
    Text: 2SA1832FT シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832FT ○ 低周波増幅用 • 単位: mm 高耐圧です。 : VCEO = −50 V • コレクタ電流が大きい。 : IC = −150 mA (最大) • 電流増幅率が高い。


    Original     		PDF 2SA1832FT 2SC4738FT 2SA1832FT 2SC4738FT

    2SA1832F

    Abstract: 2SC4738F
    Text: 2SA1832F シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832F ○ 低周波増幅用 • 単位: mm : VCEO = −50 V 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。


    Original     		PDF 2SA1832F 2SC4738F 2SA1832F 2SC4738F

    2SA1832FT

    Abstract: 2SC4738F
    Text: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity


    Original     		PDF 2SA1832FT 2SC4738F 2SA1832FT 2SC4738F

    Untitled

    Abstract: No abstract text available
    Text: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1832F 2SC4738F

    2SA1832FT

    Abstract: 2SC4738F
    Text: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity


    Original     		PDF 2SA1832FT 2SC4738F 2SA1832FT 2SC4738F

    2SC4738TT

    Abstract: 2SA1832F
    Text: 2SC4738TT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738TT Audio Frequency General Purpose Amplifier Applications 0.22 ± 0.05 Complementary to 2SA1832F • Small package 1 0.45 • 1 0.45 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738TT 2SA1832F 2SC4738TT 2SA1832F

    Untitled

    Abstract: No abstract text available
    Text: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1832F 2SC4738F

    2SC4738FV

    Abstract: MARKING LY toshiba 2SA1832FV
    Text: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV


    Original     		PDF 2SC4738FV 2SA1832FV 2SC4738FV MARKING LY toshiba 2SA1832FV

    2SA1832FT

    Abstract: 2SC4738F
    Text: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/


    Original     		PDF 2SA1832FT 2SC4738F 2SA1832FT 2SC4738F

    2SA1832FT

    Abstract: 2SC4738F
    Text: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/


    Original     		PDF 2SA1832FT 2SC4738F 2SA1832FT 2SC4738F

    Untitled

    Abstract: No abstract text available
    Text: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity


    Original     		PDF 2SA1832FT 2SC4738F

    2SA1832FV

    Abstract: 2SC4738FV
    Text: 2SA1832FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 to 400 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) 1 2 3 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1832FV 2SC4738FV 2SA1832FV 2SC4738FV

    2SA1832FT

    Abstract: 2SC4738F
    Text: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = −50 V · High current: IC = −150 mA (max) · High hFE: hFE = 120 to 400 · Excellent hFE linearity


    Original     		PDF 2SA1832FT 2SC4738F 2SA1832FT 2SC4738F

    Untitled

    Abstract: No abstract text available
    Text: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1832F 2SC4738F

    2SA1832F

    Abstract: 2SC4738F
    Text: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1832F 2SC4738F 2SA1832F 2SC4738F

    2SA1832FT

    Abstract: 2SC4738FT
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • • • • • Unit: mm High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity


    Original     		PDF 2SC4738FT 2SA1832FT 2SA1832FT 2SC4738FT

    2SA1832FT

    Abstract: 2SC4738FT
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity


    Original     		PDF 2SC4738FT 2SA1832FT 125transportation 2SA1832FT 2SC4738FT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • • • High Voltage and High Current : VCE0 = - 50V, I C = - 150mA(Max.) Excellent hpE Linearity : hpE Oc ~ - 0.1mA) I hFE d c = -2m A) = 0.95 (Typ.)


    OCR Scan     		PDF 2SA1832F 150mA 2SC4738F T-100mA, --10mA --10V,

    2SA1832F

    Abstract: 2SC4738F
    Text: TO SH IBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : V c e O = -5 0 V, Iq = -1 5 0 mA (max.)


    OCR Scan     		PDF 2SA1832F 2SC4738F 2SA1832F 2SC4738F

    marking IAY

    Abstract: 2SA1832F 2SC4738F
    Text: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : VCEO = —50V, Iq = —150mA (Max.) Excellent hFE Linearity


    OCR Scan     		PDF 2SA1832F 150mA 2SC4738F marking IAY 2SA1832F 2SC4738F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1832F TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current ; V q e O = “ 50V, Ic = —150mA (Max.)


    OCR Scan     		PDF 2SA1832F 150mA 2SC4738F

    marking IAY

    Abstract: 2SA1832F 2SC4738F
    Text: 2SA1832F TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS Unit in mm 1.6 ± 0.1 • 0.85 ± 0.1 High Voltage and High Current : V c e O = - 5 0 V, I q = - 1 5 0 mA (max.)


    OCR Scan     		PDF 2SA1832F 2SC4738F marking IAY 2SA1832F 2SC4738F