Untitled
Abstract: No abstract text available
Text: Product specification 2SA1532 Features High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO
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2SA1532
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2SA1532
Abstract: 2SC3930
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm (0.425) For high-frequency amplification Complementary to 2SA1532 M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05
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Original
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2002/95/EC)
2SC3930
2SA1532
2SA1532
2SC3930
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2SA1532G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1532G • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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Original
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2002/95/EC)
2SC3930G
2SA1532G
2SA1532G
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2SA1532
Abstract: 2SC3930
Text: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
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2SA1532
2SC3930
2SA1532
2SC3930
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2SA1532
Abstract: 2SC3930
Text: Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm 0.425 For high-frequency amplification Complementary to 2SA1532 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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Original
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2SC3930
2SA1532
2SA1532
2SC3930
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05
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Original
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2002/95/EC)
2SA1532
2SC3930
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PDF
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2SA1532G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930G • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and
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Original
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2002/95/EC)
2SA1532G
2SC3930G
2SA1532G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1
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Original
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2002/95/EC)
2SA1532
2SC3930
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hFE-50
Abstract: 2SA1532
Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SA1532 Features High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO
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Original
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2SA1532
hFE-50
2SA1532
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1532G • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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Original
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2002/95/EC)
2SC3930G
2SA1532G
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PDF
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2SA1532
Abstract: 2SC3930
Text: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage
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2SC3930
2SA1532
100MHz
2SA1532
2SC3930
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2SA1532
Abstract: 2SC3930
Text: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage
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Original
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2SC3930
2SA1532
2SA1532
2SC3930
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification Complementary to 2SC3930G • Package • High transition frequency fT
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Original
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2002/95/EC)
2SA1532G
2SC3930G
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PDF
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2SA1532
Abstract: 2SC3930
Text: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and
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2SC3930
2SA1532
2SA1532
2SC3930
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1532G • Package • Optimum for RF amplification of FM/AM radios
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Original
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2002/95/EC)
2SC3930G
2SA1532G
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S-Mini3-G1
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm (0.425) For high-frequency amplification Complementary to 2SA1532 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Optimum for RF amplification of FM/AM radios
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Original
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2002/95/EC)
2SC3930
2SA1532
S-Mini3-G1
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2
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Original
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2002/95/EC)
2SA1532
2SC3930
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marking EB 202 transistor
Abstract: 2SA1532 2SC3930
Text: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and
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Original
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2SA1532
2SC3930
marking EB 202 transistor
2SA1532
2SC3930
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PDF
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2SA1532
Abstract: 2SC3930
Text: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and
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2SA1532
2SC3930
2SA1532
2SC3930
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marking VB
Abstract: NPN Silicon Epitaxial Planar Transistor 2SC3930W 2SA1532 marking code vc sot sot-323 transistor marking code 15 AM SOT-323
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High transition frequency fT. z Optimum for RF amplification of 2SC3930W Pb Lead-free FM/AM radios. z For high-frequency amplification complementary to 2SA1532.
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2SC3930W
2SA1532.
OT-323
BL/SSSTF036
marking VB
NPN Silicon Epitaxial Planar Transistor
2SC3930W
2SA1532
marking code vc sot
sot-323 transistor marking code 15
AM SOT-323
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2SC3930G
Abstract: 2SA1532G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1532G • Features ue pl d in an c se ed lud pl vi
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Original
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2002/95/EC)
2SC3930G
2SA1532G
2SC3930G
2SA1532G
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PDF
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2SA1532G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification Complementary to 2SC3930G • Features ue pl d in an c se ed lud pl vi
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Original
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2002/95/EC)
2SA1532G
2SC3930G
2SA1532G
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200MHZ
Abstract: 2SA1532 2SC3930 100A 2MHZ
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC3930 SOT-323 TRANSISTOR NPN FEATURES z For high-frequency Amplification Complementary to 2SA1532 z Optimum for RF amplification of FM/AM radios z High transition frequency fT
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Original
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OT-323
2SC3930
OT-323
2SA1532
200MHZ
200MHZ
2SA1532
2SC3930
100A 2MHZ
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2sc401
Abstract: 2SA1532 2SC39 2SC3936 2SC40 2SC4011
Text: - an H¡ 1 * * * 5È fê il •2SC3936 fâ T Ê : i*/Í¡ÉtÍfSffl V9 ' 2SA1532 # Ä : AM/FM 5 i 5* ® S& , RF tf* § , g j g , IF i# (g e * ® o • 2SC 3 9 3 7 : UHF Ä : feJT wim^ms, lA w W ttl, i a S f& fl a Vc e o (V ) 20 Ve b o (V) 5 tlFE ît
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OCR Scan
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2SC3936
2SA1532
200MHz
800MHz
2SC40
2sc401
2SA1532
2SC39
2SC4011
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PDF
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