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    Microchip Technology Inc 2N6901

    MOSFET N-CH 100V 1.69A TO39
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    Microchip Technology Inc JAN2N6901

    MOSFET N-CH 100V 1.69A TO205AF
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    Microchip Technology Inc JANTX2N6901

    MOSFET N-CH 100V 1.69A TO205AF
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    Microchip Technology Inc JANTXV2N6901

    Trans MOSFET N-CH 100V 1.69A 3-Pin TO-205AF - Bag (Alt: JANTXV2N6901)
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    Intersil Corporation JAN2N6901

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    Bristol Electronics JAN2N6901 318
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    2N6901 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6901 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-205AF TO-39 Original PDF
    2N6901 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6901 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6901 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6901 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6901TX Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6901TXV Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6901 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6901

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6901 ABSOLUTE MAXIMUM RATINGS (Tc = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain — Source Voltage VDS 1 00


    Original
    PDF 2N6901 2N6901

    2N6901

    Abstract: No abstract text available
    Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM


    Original
    PDF 2N6901 O-205AF) 2N6901

    2N6901

    Abstract: 2n6901 jantxv
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL LOGIC LEVEL MOSFET


    Original
    PDF MIL-PRF-19500/570 2N6901 O-205 T4-LDS-0188 2N6901 2n6901 jantxv

    2N6903 JANTX

    Abstract: 2N6903
    Text: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 April 2009. MIL-PRF-19500/570D 11 January 2009 SUPERSEDING MIL-PRF-19500/570C 17 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,


    Original
    PDF MIL-PRF-19500/570D MIL-PRF-19500/570C 2N6901 2N6903, MIL-PRF-19500. 2N6903 JANTX 2N6903

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


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    PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684

    2N6901

    Abstract: No abstract text available
    Text: • 3 3 430 2 57 1 GDS'ib'lE T3ö ■ H A R R HAS 2N6901 IS A u g u s t 1991 N -Channel Logic Level Power MOS Field-Effect Transistors L2 FET Package Features T 0 -2 0 5 A F • 1.69A , 1 0 0V BOTTOM VIEW • r D S {on) = 1-4 n GATE SOURCE • Design O ptim ized for 5V G ate Drive


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    PDF 2N6901 92CM-40707 4302E71 2N6901

    2N6901 JANTX

    Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
    Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements


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    PDF 2N6901 2N6901 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6901 JANTX 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2N6897 JANTXV 2N6897

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


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    PDF 2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


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    PDF 2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


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    PDF 2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


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    PDF 2N6898 2N6898 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 JANTX 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500

    2N6794

    Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
    Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds


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    PDF 2N6794 2N6794 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


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    PDF 2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500

    2N6770

    Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
    Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


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    PDF 2N6769, 2N6770 50V-500V 2N6769 2N6770 2N6796 O-2I35AF O-205AF 2N6800 2N6770 JANTXV 2N6770 JANTX

    2N6895 JANTXV

    Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
    Text: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds


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    PDF 2N6895 2N689S 2N6895 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6895 JANTXV qpl-19500 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX

    2N6898

    Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
    Text: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


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    PDF 2N6897 2N6897 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 36485 2N6798 TRANSISTOR C 557 B 2N6901 IDM30 2N6904 qpl-19500

    2N6849

    Abstract: 2N6849 JANTX b 43306 2n6800 2n6849 mosfet 2n6849 jantxv
    Text: Rugged Power MOSFETs File N u m b e r 2N6849 2219 Avalanche-Energy-Rated P-Channel Power MOSFETs -6.5A, and -100V ib s on = 0.30Q TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ited m N anosecond sw itching speeds


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    PDF 2N6849 -100V 92CS-43262 2N6849 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6849 JANTX b 43306 2n6849 mosfet 2n6849 jantxv

    2N6758

    Abstract: 2N6902 QPL-19500
    Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,


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    PDF 2N6902 92cs-3374i 2N6902 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6758 QPL-19500

    2n6798 jantx

    Abstract: 2N6798 IH0063 2N6756 QPL-19500
    Text: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited


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    PDF 2N6798 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2n6798 jantx IH0063 2N6756 QPL-19500

    2N6792 JANTX

    Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
    Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds


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    PDF 2N6792 2N6792 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6792 JANTX C055 LH0063 QPL-19500 2N6904

    qpl-19500

    Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
    Text: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


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    PDF 2N6896 2N6896 T0-204AA 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF qpl-19500 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV

    2N7119

    Abstract: 2N7122 2N7121 2N6967 2N7243 2N724 2N6966 2N7123 JANTX LTPD FOR LOT AND SCREENING DEVICES 2N7242
    Text: HARRIS SEMICOND SECTOR SbE T> • 430EE71 QÜ42235 ‘ìbb H H A S Military Power Products MOSFETs M ilitary Pow er Products Military and aerospace requirements for high—reliability solid-state devices are extremely large and diverse, not only in terms of performance, operating conditions, and


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    PDF 430EE71 QG42235 TC5-204AA 2N7120 T0-204AA 2N7121 2N7122 2N7123 2N7119 2N6967 2N7243 2N724 2N6966 JANTX LTPD FOR LOT AND SCREENING DEVICES 2N7242

    2N6784

    Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
    Text: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds


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    PDF 2N6784 2N6784 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX

    2N6851

    Abstract: 2N6851 JANTX 2n6800
    Text: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d


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    PDF 2N6851 -200V cs-43 2N6851 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6851 JANTX