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    2N689 Price and Stock

    Solid State Inc 2N689A

    TO 48 25 AMP SCR
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    DigiKey 2N689A Box 50 10
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    Solid State Inc 2N689

    TO 48 25 AMP SCR
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    DigiKey 2N689 Box 10 10
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    Central Semiconductor Corp 2N689

    SCR 500V 25A TO48
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    Central Semiconductor Corp 2N689A

    SCR 500V 25A TO48
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    Vishay Semiconductors VS-2N689

    SCR 500V 25A TO208AA
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    DigiKey VS-2N689 Bulk 100
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    Find more 2N689 price and stock on Findchips.com

    2N689 Datasheets (82)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N689 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan PDF
    2N689 AEI Semiconductors Power Semiconductors Data Book 1974 Scan PDF
    2N689 Central Semiconductor Leaded Thyristor SCR Scan PDF
    2N689 General Electric Semiconductor Data Book 1971 Scan PDF
    2N689 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N689 General Electric 25A silicon controlled rectifier. Vrsom 600V. Scan PDF
    2N689 International Rectifier 30 and 35 Amp RMS SCRs Scan PDF
    2N689 International Rectifier 25 A RMS SCR Scan PDF
    2N689 Knox Semiconductor 25 and 35 Amp RMS SCRs Scan PDF
    2N689 Loras Industries SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-202 Scan PDF
    2N689 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N689 Motorola The European Selection Data Book 1976 Scan PDF
    2N689 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N689 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N689 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N689 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N689 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N689 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N689 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N689 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

    2N689 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6896

    Abstract: TB334
    Text: 2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features • -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching


    Original     		PDF 2N6896 -100V, -100V 2N6896 O-204AA TB334 TB334

    2n6898

    Abstract: No abstract text available
    Text: Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6898 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A,-100V ros(on): 0.20 n TERMINAL DIAGRAM


    Original     		PDF 2N6898 -100V 2N6898 92CM-4O693

    AEG T 130 N

    Abstract: N018RH05 CP08F T13N500COF CA08f 80M4 SIPS535
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 CR20EY10 SC20C50 Ca08F ca09F T10F500CCC T10F500CRC T10F500UCC T10F500URC BTY87-500R 21RC50 c.;~7E 15 20 25 30 35 40 45 50 BTY91-500R 2NS89AS 2N689AS 2N689AS 2N689S BTW39-500 NS525 C231E C231E C231E C231E2


    Original     		PDF CR20EY10 SC20C50 Ca08F ca09F T10F500CCC T10F500CRC T10F500UCC T10F500URC BTY87-500R 21RC50 AEG T 130 N N018RH05 CP08F T13N500COF 80M4 SIPS535

    2N6896

    Abstract: TB334
    Text: 2N6896 Data Sheet November 1998 File Number -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching


    Original     		PDF 2N6896 -100V, 2N6896 O-204AA -100V TB334 TB334

    2N6897

    Abstract: TRANSISTOR 18751 DC/EQUIVALENT transistor 18751
    Text: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,


    Original     		PDF 2N6897 -100V, -100V 2N6897 2N689ther TRANSISTOR 18751 DC/EQUIVALENT transistor 18751

    2N6898

    Abstract: mosfet p channel
    Text: TECHNICAL DATA POWER MOSFET P CHANNEL Devices 25 AMPERE 100 VOLTS 0.2 Ω 2N6898 • • • • HIGH INPUT IMPEDANCE LOW RDS ON MAJORITY CARRIER DEVICE LINEAR TRANSFER CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters/Test Conditions


    Original     		PDF 2N6898 2N6898 mosfet p channel

    2N6897

    Abstract: No abstract text available
    Text: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,


    Original     		PDF 2N6897 -100V, -100V 2N6897 2N689opment.

    2N6897

    Abstract: No abstract text available
    Text: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor December 2001 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,


    Original     		PDF 2N6897 -100V, -100V 2N6897 2N68opment.

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


    Original     		PDF 2N681-2N692, 2N5204-2N5207 MIL-PRF-19500, 2N681-2N69p

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6898 2N6898 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 JANTX 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500

    Untitled

    Abstract: No abstract text available
    Text: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM *T RMS 't (AV) 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 100 200 400 600 800 1000


    OCR Scan     		PDF 4flS5452 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689

    50R1A160

    Abstract: 50RIA120M 50RIA80 16RIA60 50RIA20 50R1A140 50RIA120 16ria80 50RIA10 om 355
    Text: Thyristors international i I ] Rectifier Phase Control Type 25-80 Am ps R M S Part Number 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 Vr r m Vd RM V 100 200 400 600


    OCR Scan     		PDF 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 50R1A160 50RIA120M 50RIA80 16RIA60 50RIA20 50R1A140 50RIA120 16ria80 50RIA10 om 355

    2N6898

    Abstract: MHO16
    Text: 2N6898 Jì HARRIS P-Channel Enhancement-Mode Power MOS Field-Effect Transistors A ugust 1991 Features • Package T 0 -2 0 4 A E BOTTOM VIEW - 2 5 A, -1 0 0 V • rD S(on = 0 - 2 0 0 • SO A is P ow er-D issip atio n Lim ited • N anosecond Switching S peeds


    OCR Scan     		PDF 2N6898 2N6898 92CS-407I6 92CS-37246 92CS-37247 92CS-37248 MHO16

    2N6895 JANTXV

    Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
    Text: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		PDF 2N6895 2N689S 2N6895 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6895 JANTXV qpl-19500 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX

    qpl-19500

    Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
    Text: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF 2N6896 2N6896 T0-204AA 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF qpl-19500 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV

    2N689

    Abstract: No abstract text available
    Text: m 2N689 \ \ SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N689 is Designed for General Purpose Industrial Power Control Applications. PACKAGE STYLE TO- 48 MAXIMUM RATINGS 25 A (r m s ) 16 A (a v g ) @ Te = 65 0C Ie o m < 5OO V P d is s Pg m = 5.O W


    OCR Scan     		PDF 2N689 2N689

    2N3986

    Abstract: 2n1696 2n4146 2N3228 2N4148 LS 2027 2N3555 2n4327 2N6167 2N4331
    Text: | lemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type *Note 1 Forward Current If (»mp«) 2N6S1 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N764* 2N765* 2N766* 2N767" 2N876


    OCR Scan     		PDF 2N661 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N3986 2n1696 2n4146 2N3228 2N4148 LS 2027 2N3555 2n4327 2N6167 2N4331

    2N6895

    Abstract: No abstract text available
    Text: 2N6895 33 HARRIS August 1991 P-Channel Enhancement-Mode Power MOS Field-Effect Transistors Package Features T0-205A F BOTTOM VIEW • -1 .1 6 A , -1 0 0 V * rDS on = 3 .6 5 0 • S O A is P ow er-D issip atio n Lim ited SOURCE _ • N anosecond S w itching S peeds


    OCR Scan     		PDF 2N6895 T0-205A 2N6895

    Untitled

    Abstract: No abstract text available
    Text: • 4303571 D O S ^ O S g A u g u s t h a r r i bS4 ■ HAS 2N6895 s P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 1 9 9 1 Features Package • -1.16A , -10 0 V • l'DS(on = TO-205AF BOTTOM VIEW 3 .6 5 0 • SOA is Power-Dissipation Limited


    OCR Scan     		PDF 2N6895 O-205AF 2N6895 M302271

    25RIA120

    Abstract: 16RIA80 50RIA120 T0-208AA 10RIA10 10RIA60 10RIA100 10RIA120 10RIA20 10RIA40
    Text: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 TC 100 200 400 600 800 1000 1200 25 50


    OCR Scan     		PDF 4flS5452 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 T0208AA 2N681 25RIA120 16RIA80 50RIA120 T0-208AA

    Untitled

    Abstract: No abstract text available
    Text: m 2N689 \ \ SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N689 is Designed for General Purpose Industrial Power Control Applications. PACKAGE STYLE T O -48 MAXIMUM RATINGS lc 25 A (RMS) 16 A (avo @ Tc = 65 ° C V ce 500 V P diss PGM = 5.0 W P g(avg) = 0.5 W


    OCR Scan     		PDF 2N689 2N689

    2N6897

    Abstract: No abstract text available
    Text: 2N6897 33 HARRIS August 1991 P-Channel Enhancement-Mode Power MOS Field-Effect Transistors Features Package TO-204AA BOTTOM VIEW • -12A , -10 0 V * r D S on = 0 - 3 0 SOURCE v_/ • S O A is Power-Dissipation Limited _ - - DRAIN (FLANGE) • Nanosecond Switching Speeds


    OCR Scan     		PDF 2N6897 O-204AA 92CS-40725 2N6897

    TO-208AA

    Abstract: 180T2 to48c 50ria120m 16RIA120 50RIA120
    Text: International »»Rectifier Thyristors Phase C ontrol Type 2 5 -8 0 Amps lT AV Tc Vr r m Part Number 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 vdrm IT(RMS) (V) (A)


    OCR Scan     		PDF 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 TO-208AA 180T2 to48c 50ria120m 16RIA120 50RIA120

    2N692

    Abstract: No abstract text available
    Text: SCRS Continued IT (AMPS) 16 25 @ TC (°C) 90 90 90 70 ITSM (AMPS) 200 200 160 200 (a & ä (K - » uuU CASE TO-48 TO-220 TO-3 90 f 250 £ n u U ¡J TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B*


    OCR Scan     		PDF O-220 2N681 2N682 2N3668 2N683 2N684 2N3669 CS3-16B CS220-16B* 2N692