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    Walsin Technology Corporation 0402N680J500CT

    CAP CER 68PF 50V C0G/NP0 0402
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    Walsin Technology Corporation 0402N680G500CT

    CAP CER 68PF 50V C0G/NP0 0402
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    Susumu Co Ltd RG2012N-680-D-T5

    RES SMD 68 OHM 0.5% 1/8W 0805
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    Vishay Dale NTHS0805N02N6801JE

    THERM NTC 6.8KOHM 3890K 0805
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    Vishay Dale NTHS0805N02N6801HE

    THERM NTC 6.8KOHM 3254K 0805
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    2N680 Datasheets (92)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N680 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N680 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N680 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N680 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N680 Unknown Vintage Transistor Datasheets Scan PDF
    2N680 Unknown GE Transistor Specifications Scan PDF
    2N680 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N680 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N680 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6800 Defense Supply Center Columbus N-Channel FET Original PDF
    2N6800 International Rectifier TRANS MOSFET N-CH 400V 3A 3TO-205 Original PDF
    2N6800 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6800 Microsemi N Channel MOSFET; Original PDF
    2N6800 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V TO-205AF TO-39 Original PDF
    2N6800 Semelab FET, 2 VThreshold, ID 3 A Original PDF
    2N6800 Semelab N-CHANNEL ENHANCEMENT POWER MOSFET Original PDF
    2N6800 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6800 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    2N6800 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    2N6800 Motorola European Master Selection Guide 1986 Scan PDF

    2N680 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6801LCC6

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N6801" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N6801 N-Channel TO39 450V 2.5A 25W


    Original     		PDF 2N6801" 2N6801 2N6801LCC4 2N6801LCC4-JQR-B 2N6801LCC6 2N6801LCC6-JQR-B 2N6801SMD 2N6801SMD-JQR-B O276AB)

    Untitled

    Abstract: No abstract text available
    Text: 2N6804+JANTX Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11# I(DM) Max. (A) Pulsed I(D)7.0# @Temp (øC)100 IDM Max (@25øC Amb)50# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)


    Original     		PDF 2N6804

    JANTX2N6796

    Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
    Text: 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, 2N6800, 2N6800 2N6802, 2N6802, 2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor


    Original     		PDF 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798

    Untitled

    Abstract: No abstract text available
    Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These


    Original     		PDF 2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF T4-LDS-0047-1,

    2N6802

    Abstract: IRFF430
    Text: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N6802 IRFF430 O-205AF) 2N6802 IRFF430

    2N6880

    Abstract: 2N6798 JANTXV
    Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These


    Original     		PDF 2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 T4-LDS-0047, 2N6880 2N6798 JANTXV

    Untitled

    Abstract: No abstract text available
    Text: 2N6800 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF 2N6800 O205AF) 11-Oct-02

    2N6800

    Abstract: No abstract text available
    Text: SEME 2N6800 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID RDS(on) 0 .8 9 m a x . (0 .0 3 5 )


    Original     		PDF 2N6800 00A/ms 300ms, 2N6800

    MOSFET

    Abstract: 2N6802
    Text: t^ejm.l-donJ.uatot. tPioduati, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE POWER MOSFET BV DSS D(cont)


    Original     		PDF 2N6802 IRFF430 00A/US 300us, MOSFET 2N6802

    Untitled

    Abstract: No abstract text available
    Text: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N6802 IRFF430 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: 2N6802 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF 2N6802 O205AF) 11-Oct-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6800 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 400V 3.0A Ω


    Original     		PDF 2N6800 O205AF) 2N6800" 2N6800 2N6800LCC4 2N6800LCC4-JQR-B 2N6800SMD 2N6800SMD-JQR-B O276AB)

    mil-prf-19500/557

    Abstract: 2N6800 2N6800U
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6800 2N6800U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/557 2N6800 2N6800U Opera0803 T4-LDS-0148 mil-prf-19500/557 2N6800 2N6800U

    2N6802

    Abstract: 2N6802U
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6802 2N6802U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/557 2N6802 2N6802U T4-LDS-0149 2N6802 2N6802U

    DD 127 D transistor

    Abstract: 2n6798u 2N6796U
    Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These


    Original     		PDF 2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF 2N6796, 2N67mensions T4-LDS-0047-1, DD 127 D transistor 2N6796U

    asz21

    Abstract: AF117 AF114 OC170 Low-Power Germanium PNP GT346B 2G381 2SA239 2n2398 s100
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 • 15 20 25 · 30 35 40 45 50 55 60 2N1158 2N615 2N2966 2N1158A 2SA239 2SA239 2N3399 2SA434 2SA435 2N1744 2N1747 2N1745 2N1868 2N1743 2N1742 2N1746 2N38 2N680 GT758 TR758A TR758A TR758A 2N578 2N1343 ASY50


    Original     		PDF 2N1158 2N615 2N2966 2N1158A 2SA239 2N3399 2SA434 2SA435 2N1744 asz21 AF117 AF114 OC170 Low-Power Germanium PNP GT346B 2G381 2n2398 s100

    2N6804

    Abstract: No abstract text available
    Text: Rugged Power MOSFETs 2N6804 File N um ber 2217 Avalanche-Energy-Rated P-Channel Power MOSFETs TE R M IN A L DIAGRAM -11 A, -100V r Dsiom = 0.30D Features: • S ingle pulse avalanche e n ergy rated ■ SOA is p o w e r-d is s ip a tio n lim ite d ■ N anosecond s w itc h in g speeds


    OCR Scan     		PDF 2N6804 -100V 2N6804 92CS-4330Â 92CS-43278

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790


    OCR Scan     		PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120

    2N6799

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel 2N6799 JTX, JTXV 2N6800 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosnm and a high transconductance. FEATURES


    OCR Scan     		PDF 2N6799 2N6800 2N6799

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    2N6802

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 12E 0 | b3b?25M GQöbbbö 0 | 2N6802 CASE 79-05, STYLE 6 TO-39 TO-205AF MAXIMUM RATINGS Symbol Value U nit Drain-Source Voltage Rating Voss 500 Vdc Drain-Gate Voltage (Rq s * 1 . 0 m il) Vd g r 500 Vdc Vg S Drain Current Continuous


    OCR Scan     		PDF 2N6802 O-205AF) 2N6802

    2N6801-SM

    Abstract: BFC49
    Text: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18


    OCR Scan     		PDF 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L BFC49

    2N6800

    Abstract: No abstract text available
    Text: 2N6800 {£ HARRIS N -Channel Enhancem ent-M ode Power MOS Field-Effect Transistor A ug ust 1 9 9 1 P a ckage Features T O -2 0 5 A F • 3 A, 4 0 0 V * rD S o n ) BOTTOM VIEW = m C. • S O A is P o w e r - D is s ip a t io n L im ite d • N an o se co n d


    OCR Scan     		PDF 2N6800 2N6800

    2N6804

    Abstract: No abstract text available
    Text: 2 } H A R R 2N6804 IS Avalanche-Energy-Rated P-Channel Power MOSFETs A ugust 1 9 9 1 Package Features TQ-204AA BOTTOM VIEW • -1 1 A, -1 0 0 V * rD S on = 0 .3 0 f i DRAIN (FLANGE) SOURCE • Single Pulse A valanche E nergy Rated • S O A is P ow er-D issip atio n Lim ited


    OCR Scan     		PDF 2N6804 TQ-204AA SSCS-43304 92CS-43307 2N6804