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    2N6727 Price and Stock

    onsemi 2N6727

    TRANS PNP 40V 2A TO237
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    DigiKey 2N6727 Bulk 2,000
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    NTE Electronics Inc 2N6727

    Transistor, Bipolar, Pnp, 80V, 1A; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:850Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:50Mhz Rohs Compliant: No |Nte Electronics 2N6727
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    Newark 2N6727 Bulk 1
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    Semiconductors 2N6727

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    Onlinecomponents.com 2N6727 1,252
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    National Semiconductor Corporation 2N6727

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    ES Components 2N6727 1,735
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    Diodes Incorporated 2N6727

    Small Signal Bipolar Transistor, 1AI(C),40VV(BR)CEO, 1-Element, PNP, Silicon
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    New Advantage Corporation 2N6727 5 1
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    2N6727 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6727 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2N6727 Zetex Semiconductors PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Original PDF
    2N6727 Zetex Semiconductors PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Original PDF
    2N6727 Central Semiconductor COMPLEMENTARY SILICON POWER TRANSISTOR Scan PDF
    2N6727 Central Semiconductor Power Transistors TO-237 Case Scan PDF
    2N6727 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    2N6727 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6727 General Electric Power Transistor Data Book 1985 Scan PDF
    2N6727 Micro Electronics Medium Power Amps and Switches Scan PDF
    2N6727 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N6727 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6727 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6727 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6727 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6727 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6727 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6727 National Semiconductor General Purpose Amplifiers and Switches Scan PDF
    2N6727 National Semiconductor PNP Medium Power Transistors Scan PDF
    2N6727 National Semiconductor Medium Power Transistors Scan PDF
    2N6727 National Semiconductor PNP Transistors Scan PDF

    2N6727 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6727 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC


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    PDF 2N6727 O-237 C-120

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6727 TRANSISTOR PNP 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


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    PDF 2N6727 -10mA -10mA -100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N6727 TRANSISTOR( PNP ) TO—92 FEATURES 1.EMITTER Power dissipation PCM : 1 W(Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V BR CBO : -50


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    PDF 2N6727 -50mA 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: 2N6727 Plastic-Encapsulate Transistors 2 PNP TO-92 Features Power dissipation PCM : 1 W Tamb=25℃ Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. BASE 3. COLLECTOR


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    PDF 2N6727

    2N6727

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N6727 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 2. BASE W(Tamb=25℃) 3. COLLECTOR Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range


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    PDF 2N6727 2N6727

    2N6727

    Abstract: TRANSISTOR 2N6727 Equivalent of 2n6727
    Text: 2N6727 2N6727 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 2. BASE W(Tamb=25℃) 3. COLLECTOR Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


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    PDF 2N6727 2N6727 TRANSISTOR 2N6727 Equivalent of 2n6727

    2SC1815 NPN SOT-23

    Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
    Text: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213


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    PDF 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C

    2N6727

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N6727 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 2. BASE W(Tamb=25℃) 3. COLLECTOR Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V


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    PDF 2N6727 2N6727

    Untitled

    Abstract: No abstract text available
    Text: 2N6727 50 V - PNP Silicon Planar Medium Power Transistor 5.50 Transistors Bipolar Sil. Page 1 of 1 Enter Your Part # Home Part Number: 2N6727 Online Store 2N6727 Diodes 50 V - PN P Silic on Plana r M ed ium P ow er T rans ist or Transistors Integrated Circuits


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    PDF 2N6727 2N6727 O-237var com/2n6727

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6727 PNP SILICON PLANAR EPITAXIAL TRANSISTOR This Device was Designed for General Purpose Medium Power Amplifier.


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    PDF O-237 2N6727 C-120

    2N6726

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZTX549 / ZTX751 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


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    PDF ZTX549 ZTX751 2N6726 2N6727 2N6727 -10mA, -100mA*

    2N6726

    Abstract: 2N6727
    Text: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6726 -40 2N6727


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    PDF 2N6726 2N6727 -100mA* -10mA, -100mA, -50mA, 2N6726 2N6727

    2N6727

    Abstract: TRANSISTOR 2N6727
    Text: 2N6727 -1.5 A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 General Purpose Switching Application G H Emitter Base Collector J A D REF.


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    PDF 2N6727 13-Jan-2011 -10mA -100mA 2N6727 TRANSISTOR 2N6727

    2N6727

    Abstract: MPS6727 PN6727
    Text: NATL SEMICOND DISCRETE H E D I bSO llBO 0DB7c!bii ä I ro Z 25 VO M T- 33-/7 National Semiconductor O IO M s 2N6727 PN6727 "O CO 0> MPS6727 IO M PNP General Purpose Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter Min


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    PDF T-33-/7 2N6727 PN6727 MPS6727 O-226AE TUG/10100-8 TL/G/10100-1 TL/G/10100-4 MPS6727

    CENW64

    Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
    Text: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50


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    PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 CENW64 2N6730 2N6719

    2n6726

    Abstract: 2n6727
    Text: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * * 4 0 V o ltV CEO Gain of 50 at lc : 1 Amp * Ptot=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 Collector-Base Voltage V C BO -40 Collector-Emitter Voltage


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    PDF 2N6726 2N6727 2N6727 -100mA* -50mA,

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6726 2N6727 ISSUE 1 - MARCH 94_ FEATURES * 40 Volt V,CEO Gain of 50 at lc = 1 Amp P,0,=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 2N6727 UNIT Collector-Base Voltage


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    PDF 2N6726 2N6727 2N6726 001G35S

    2N6726

    Abstract: 2N6714 2N6727 SE192 TRANSITON
    Text: Silicon Planar Medium Power Transistors 2N6715 2N6727 NPN 2N6714 PNP 2N6726 FEATU RES • Exceptional p ow er dissipation capability -2 W @ T case = 25°C - 1 W @ T amb = 2 5 ° C • h FE specified up to 1A • L o w saturation volatages D E S C R IP T IO N


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    PDF 2N6714 2N6726 2N6715 2N6727 SE192 2N6726 2N6727 SE192 TRANSITON

    2N671A

    Abstract: 2N671 2N6727 2n671 transistor 2N6715 2N6726 TRANSISTOR 726 2N6714
    Text: Datasheet Central 2N6714 2N6726 Semiconductor Corp. 2N6715 2N6727 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-237 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF 2N6714 2N6715 2N6726 2N6727 O-237 2N6714, 2N671it, 2N6726) 2N6715, 2N671A 2N671 2n671 transistor TRANSISTOR 726

    2N6727

    Abstract: No abstract text available
    Text: 2N6727/PN6727/MPS6727 Ju M National Semiconductor 2N6727 PN6727 MPS6727 llllll M l V j M il K ! ////// tnll T O -2 5 7 T Q -9 2 T L /G /10100-0 T L /G /10100-1 T 0 -2 2 6 A E C TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Ta = 25°c unless otherwise noted


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    PDF 2N6727/PN6727/MPS6727 2N6727 PN6727 MPS6727 TL/G/10100-4 2N6727

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-237 Case TYPE NO. ic PD BVCBO BVCEO Ic hRE VCE SAT @ IC fT *b v c e s (A) NPN PNP m MAX (n»A) (V) (V) MIN MIN MIN MAX 00 <mA) MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 2N6715 2N6727 2.0 2.0 50 40 50 250 2N6716 2N6728 2.0 2.0 60


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    PDF O-237 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-237 Case O Z TYPE ic PD BVCBO BVCEO @ Ic hFE VCE SAT @ IC fT * bv Ce s (A) NPN PNP (W) MAX (mA) (V) (V) MIN MIN MIN MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000


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    PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718

    ztx614

    Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80


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    PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 ztx614 2n6718 2N6724 2N6725

    CENW64

    Abstract: 2n6722
    Text: Power Transistors TO-237 Case O z TYPE ic PD BVCBO ic hFE BVCEO V CE SAT ® IC ft *BVggg (A) (W) MAX (V) (V) (mA) (V) (mA) MAX (MHz) NPN PNP MIN MIN MIN MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 MIN 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000


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    PDF O-237 2N6726 2N6727 2N6728 2N6729 2N6730 2N6714 2N6715 2N6716 2N6717 CENW64 2n6722