29GHZ Search Results

AMMP-6429

Contextual Info: AMMP-6429 27-29.5GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6429 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 29GHz. At 29GHz, it provides 29dBm

TGA4512-SM

Abstract: RO4003 Ka-band
Contextual Info: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB

H40P

Abstract: NN12 P35-5135-000-200
Contextual Info: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers

FMM5826X

Abstract: Ka-band ED-4701
Contextual Info: FMM5826X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 28 dBm Typ. •High Linear Gain; GL = 21 dB(Typ.) •Frequency Band ; 27.0 - 30.0 GHz •High Linearity ; OIP3 = 37dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5826X is a power amplifier MMIC that contains a threestage amplifier, internally matched, for standard communications

Contextual Info: TGA4030-SM 17 – 37 GHz MPA/Multiplier Key Features • • • • • • RF Output Frequency Range: 17 - 37 GHz 20 dB Nominal Gain 22 dBm Nominal Output Maximum Power 2x and 3x Multiplier Function Bias: Vd = 5V, Id = 140mA Package Dimensions: 3.0 x 3.0 x 1.1 mm

amplifier circuit diagram 10000 watt

Contextual Info: HMC943LP5E v02.0113 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios High Output IP3: +41 dBm

HMC576

Abstract: STM-64
Contextual Info: HMC576 v00.0506 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Typical Applications Features The HMC576 is suitable for: High Output Power: +17 dBm • Clock Generation Applications: SONET OC-192 & SDH STM-64

ic 74125

Abstract: ic 74121 transistor 4580 SBFP540D ic 74126 information NF 817 74124 voltage controlled
Contextual Info: Ordering number : ENN7412 SBFP540D NPN Epitaxial Planar Silicon Transistor SBFP540D UHF to C Band Low Noise Amplifier, Oscillation Applications • 0.05 • [SBFP540D] 0.5 0.2 3 4 2 1 1 : Base 2 : Emitter 3 : Collector 4 : Emitter 0.05 0.6 Bottom View 1.0

TGA4513

Contextual Info: Advance Product Information Dec 14, 2004 27 - 31 GHz 2W Balanced Power Amplifier TGA4513 Key Features • • • • • • • • • Primary Applications Measured Data • Satellite Ground Terminal 25 • Point to Point Radio 20 • Point to Multi Point Radio

Contextual Info: Product Data Sheet August 5, 2008 30 GHz 5-Bit Phase Shifter TGP2100 Key Features and Performance • • • • • • Positive Control Voltage Single-Ended Logic CMOS Compatible Frequency Range: 28 - 32 GHz 0.25µm pHEMT 3MI Technology Chip dimensions:

Contextual Info: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB

Contextual Info: HMC906 v03.0911 Amplifiers - Linear & Power - Chip 3 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Typical Applications Features The HMC906 is ideal for: Saturated Output Power: +34 dBm @ 22% PAE • Point-to-Point Radios High Output IP3: +43 dBm

74124 voltage controlled

Abstract: SBFP540D transistor 4580
Contextual Info: Ordering number : ENN7412 SBFP540D SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP540D UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • • • • Low noise : NF=0.9dB typ f=1.8GHz . High cutoff frequency : fT=20GHz typ(VCE=1V).

74368

Abstract: 7436 ic data sheet circuit diagram of 7436 ic ENN7436 SBFP540B 74367 9853 1331 br 8550 NPN
Contextual Info: Ordering number : ENN7436 SBFP540B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP540B UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • • • Low noise : NF=0.9dB typ f=1.8GHz . High cut-off frequency : fT=20GHz typ (VCE=1V).

TGP2100

Contextual Info: Product Data Sheet August 5, 2008 30 GHz 5-Bit Phase Shifter TGP2100 Key Features and Performance • • • • • • Positive Control Voltage Single-Ended Logic CMOS Compatible Frequency Range: 28 - 32 GHz 0.25µm pHEMT 3MI Technology Chip dimensions:

ka-band amplifier

Abstract: QFN-4x4 RO4003 TGA 30GHz
Contextual Info: Advance Product Information November 15, 2005 Ka-band Compact Driver Amplifier TGA4510-SM Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads

combiner THEORY

Abstract: wilkinson divider AN999 HMMC5033 HMMC-5033 HMMC5040 HMMC-5040 DC TO 18GHZ RF AMPLIFIER MMIC bond wire gold Analysis and Prevention Oscillations
Contextual Info: 1 WATT 17.7 GHz – 32 GHz Linear Power Amplifier Application Note # 52 - Rev. A.1 July 1998 1.0 Introduction This application note provides application information and performance data on the use of HMMC5033 linear amplifiers in multiple chip combined configurations to increase output power. Configurations of two 2x and four (4×) MMICs were assembled and tested to demonstrate feasibility and

H40P

Abstract: NN12 P35-5136-000-200 MARCONI power
Contextual Info: P35-5136-000-200 HEMT MMIC POWER AMPLIFIER, 28GHz Features • • • Gain; 15dB typical @ 28GHz P-1dB; 29dBm typical @ 28GHz 0.20 µm pHEMT technology Description The P35-5136-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers

Contextual Info: Advance Product Information Aug 5, 2004 27 - 31 GHz 2W Balanced Power Amplifier TGA4513-EPU Key Features • • • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 840 mA • Point to Point Radio 25 •

Contextual Info: TGA4030-SM 17 – 37 GHz MPA/Multiplier Key Features • • • • • • RF Output Frequency Range: 17 - 37 GHz 20 dB Nominal Gain 22 dBm Nominal Output Maximum Power 2x and 3x Multiplier Function Bias: Vd = 5V, Id = 140mA Package Dimensions: 3.0 x 3.0 x 1.1 mm

TGA1055

Abstract: TGA1055-EPU ultrasonics circuits diagram
Contextual Info: Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance • • • • • • TGA1055-EPU Primary Applications 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm

CHM1291

Contextual Info: CHM1291 25-32GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1291 is a multifunction chip MFC which integrates a LO buffer amplifier and a subharmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable

Contextual Info: TrìQuint SEMICONDUCTOR Advance Product Information Ka Band Power Amplifier TGA1055-EPU Key Features and Performance Primary Applications 0.25um pHEMT Technology LMDS 26.5 - 29 GHz Frequency Range 2W Nominal Pout at 29 GHz Point-to-Point Radio 20 Nominal Gain

CBC 307

Abstract: SBFP540B 40722 74361 pt 9795
Contextual Info: 注文コード No. N 7 4 3 6 SBFP540B 三洋半導体データシート N SBFP540B 特長 NPN エピタキシァルプレーナ型シリコントランジスタ UHF ~ C バンド低雑音増幅 , 発振用 ・低雑音である：NF=0.9dB typ （f=1.8GHz）