CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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80c42
Abstract: 82C42 siemens J146 80c42c 82c42 via cga to vga converter circuits siemens s35 lcd smd 39a diode zener B34AB amd elan sc300
Text: Module Élan386_3 FORTH-SYSTEME GmbH Postfach 11 03 Küferstr. 8 l D-79200 Breisach a. Rhein l D-79206 Breisach a. Rhein 07667 908-0lFax ( Module Élan386_3 (C) Copyright 1998: FS FORTH-SYSTEME GmbH Postfach 1103
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lan386
D-79200
D-79206
908-0lFax
908-200lsales
lanTMSC300
80c42
82C42
siemens J146
80c42c
82c42 via
cga to vga converter circuits
siemens s35 lcd
smd 39a diode zener
B34AB
amd elan sc300
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29LV800
Abstract: 29f016 29f400 29F040
Text: Common Flash Interface Version 1.4 Vendor Specific Extensions Application Note Introduction This application note provides an overview of the changes implemented between versions 1.3 and 1.4 of the SpansionTM Flash memory Common Flash Interface CFI implementation.
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AM29PL160CB
Abstract: No abstract text available
Text: Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin — Page size of 16 bytes/8 words: Fast page read
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Am29PL160C
16-Bit)
AM29PL160CB
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SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document
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Am29PDL129H
S29PL129J
Am29PDL129J
SA-275
2aa 555
SA1127
SA1-108
SA1115
SA298
SA283
SA1117
PDL128G
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION 29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current
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MX29F016
16M-BIT
90/120ns
64KByte
reM0590
MAR/31/1999
MAY/18/1999
JUN/02/1999
AUG/11/1999
SEP/01/1999
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FTA073
Abstract: No abstract text available
Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am50DL128BH
FTA073--73-Ball
FTA073
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AM29F017D-120
Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Text: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F017D
AM29F017D-120
AM29F017D-150
AM29F017D-70
AM29F017D-90
SA10
SA11
SA12
SA13
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AM29LV033C-120
Abstract: AM29LV033C-70 AM29LV033C-90 SA10 SA11 L033C AM29LV033C
Text: Am29LV033C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV033C
AM29LV033C-120
AM29LV033C-70
AM29LV033C-90
SA10
SA11
L033C
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AM29DL640H
Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am75PDL191BHHa/
Am75PDL193BHHa
Am75PDL191BHHa/Am75PDL193BHHa
AM29DL640H
FTE073
PDL127
PDL127H
PDL129
PDL129H
cef3
sa2111
AM29DL640
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Untitled
Abstract: No abstract text available
Text: PR ELIM IN ARY AM D il Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ — Backwards-com patible with the Am 29F016C ■ 5.0 V ± 10%, single power supply operation
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Am29F017B
29F016C
29F017B
AM29F017B
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29f016
Abstract: No abstract text available
Text: o \ EDI7F332MC ELECTRONIC DESIGNS, INC. 2Megx32 W 2Megx32 Flash Module Block Diagrams The EDI7F332MC and EDI7F2332MC are orga nized as one and two banks of 2 meg x 32 respec EDI7F332MCSNC 2Megx3280pinSlMM tively. fine modules are based on A M D s AM 29F016
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EDI7F332MC
2Megx32
2Megx32
EDI7F332MC
EDI7F2332MC
29F016
EDI7F332MCSNC
2Megx3280pinSlMM
DQ8-DQ15
DQ16-DQ23
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AM29F017B
Abstract: No abstract text available
Text: PR ELIM IN ARY AM D il Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ — Backwards-com patible with the Am 29F016C ■ 5.0 V ± 10%, single power supply operation
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Am29F017B
29F016C
29F017B
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lc 6231
Abstract: No abstract text available
Text: A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Voit-only, Uniform Sector Flash Memory F lash DISTINCTIVE CHARACTERISTICS • O ptim ized fo r m em ory card applications — Backw ards-com patible with the Am 29F016C ■ 5.0 V ± 10%, sing le p ow er supply operation
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20-year
29F016C
Am29F017B-70
Am29F017B
lc 6231
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Untitled
Abstract: No abstract text available
Text: PR ELIM IN ARY A M D ii Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ — Backwards-com patible with the Am 29F016C ■ 5.0 V ± 10%, single power supply operation
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Am29F017B
29F016C
29F017B
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29f016
Abstract: KAM 15
Text: FLASHMEMORY CMOS M B M 29F016-90/-12 • FEATURES • Single 5.0 V read, write, and erase M inim izes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection
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29F016-90/-12
48-pin
F9704
29f016
KAM 15
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T1A16
Abstract: 29LV116
Text: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and
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Am29LV116B
ar116B
T1A16
29LV116
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24SA27
Abstract: AM29F017B
Text: AM D Ì1 A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ Minim um 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125 C
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29F016C
29F017B
24SA27
AM29F017B
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29LV033C
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
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Am29LV033C
63-ball
40-pin
29LV033C
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Untitled
Abstract: No abstract text available
Text: / A M D il A m 2 9 L V 0 1 7 B 16 Megabit 2 M x 8-Bit CM O S 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • S in g le p o w e r s u p p ly o p e ra tio n ■ Embedded Algorithms — Full voltage range: 2.7 to 3.6 volt read and write
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16-038-TSOP-1
TSR040--40-Pin
16-038-TSOP-1
TSR040
Am29LV017B
FGC048--48-Ball
16-038-FGC-2
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032XM
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
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Am29LV033C
63-ball
40-pin
032XM
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29pl160
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Page size of 16 bytes/8 words: Fast page read access from random locations within the page
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Am29PL160C
16-Bit)
29PL160C
29pl160
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Untitled
Abstract: No abstract text available
Text: AMD£I AmCOXXDFLKA 4 ,8 ,2 0 , or 32 Megabyte 5.0 Volt-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance ■ — 150 ns maximum access time — 1 |^A typical standby current — Standard access time from standby mode ■ Single supply operation
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A24-A0
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