byw 150
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
|
Original
|
O-220AC
ITO-220AC
J-STD-020C,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
O-220AC,
ITO-220AC,
byw 150
|
PDF
|
byw 150
Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
|
Original
|
ITO-220AC
O-220AC
BYW29
J-STD-020C,
O-263AB
ITO-220AC
2002/95/EC
2002/96/EC
BYWF29
byw 150
diode byw 81 200
diode BYW 66
JESD22-B102D
J-STD-002B
|
PDF
|
byw 04-15
Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
|
Original
|
ITO-220AC
O-220AC
BYW29
O-263AB
BYWF29
O-263AB
BYWB29
2002/95/EC
2002/96/EC
J-STD-020C
byw 04-15
JESD22-B102D
J-STD-002B
byw 91-4
|
PDF
|
byw 91-4
Abstract: BYW series byw29
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020C,
ITO-220AC
2002/95/EC
byw 91-4
BYW series
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
|
PDF
|
diode BYW 66
Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
diode BYW 66
JESD22-B102
J-STD-002
BYW29-200-E3
byw 91-4
|
PDF
|
BYW29
Abstract: JESD22-B102 J-STD-002
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
JESD22-B102
J-STD-002
|
PDF
|
BYW295
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
BYW295
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBO 88 IdAV = 92 A VRRM = 800-1600 V Single Phase Rectiier Bridge in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;
|
Original
|
88-08NO7
88-12NO7
88-16NO7
20100706b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;
|
Original
|
88-08NO7
88-12NO7
88-16NO7
20100706b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBO 88 Three Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t ~L 9 ~K 10 VBO 88-08NO7
|
Original
|
00-1600V
88-08NO7
88-12NO7
88-14NO7
88-16NO7
20090317a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;
|
Original
|
00-1600V
88-08NO7
88-12NO7
88-16NO7
20100706b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t ~L 9 ~K 10 VBO 88-08NO7
|
Original
|
00-1600V
88-08NO7
88-12NO7
88-14NO7
88-16NO7
20090317a
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: VUO 122 Three Phase Rectifier Bridge IdAV = 117 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 ~A 1 ~L 9 ~K 10 VUO 122-08NO7 VUO 122-12NO7 VUO 122-14NO7 VUO 122-16NO7 EG 1 Symbol Conditions
|
Original
|
00-1600V
122-08NO7
122-12NO7
122-14NO7
122-16NO7
12age
20090317a
|
PDF
|
1x100
Abstract: No abstract text available
Text: Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy GXV SURGE VOLTAGE SUPPRESSORS Pnp diffused silicon structure Symmetric blocking characteristics
|
Original
|
1x100
GXV20050-04
GXV20050-05
GXV21038-06
GXV22020
GXV20050)
GXV24020
GXV22030
GXVT002
1x100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features Product Description Functional Diagram The AM1 is a general purpose gain block that • 250-3000 MHz Bandwidth 4 offers good dynamic range in a low cost surface 37 dBm Output IP3
|
Original
|
broad14
OT-89
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 250-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description
|
Original
|
OT-89
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 250-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description
|
Original
|
OT-89
1-800-WJ1-4401
|
PDF
|
pin configuration of 4081
Abstract: No abstract text available
Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description
|
Original
|
OT-89
Diag76
1-800-WJ1-4401
pin configuration of 4081
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description
|
Original
|
OT-89
Diag76
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +39 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTTF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description
|
Original
|
OT-89
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +39 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTTF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description
|
Original
|
OT-89
Diag067
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description
|
Original
|
OT-89
Diag76
1-800-WJ1-4401
|
PDF
|
