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    290207 Search Results

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    290207 Price and Stock

    JRH Electronics 10-129020-7S

    CONN PLUG W/SOCKETS
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    DigiKey 10-129020-7S Bag 27
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    Phoenix Contact 2902078

    MOUNTING ADAPTER EEM-MA400/600
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    DigiKey 2902078 Bulk 3 1
    • 1 $80.06
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    Mouser Electronics 2902078
    • 1 $80.06
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    TTI 2902078 Each 1
    • 1 $79.59
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    Master Electronics 2902078
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    Sager 2902078 1
    • 1 $107.88
    • 10 $99.89
    • 100 $96.32
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    Phoenix Contact 2902074

    CABLE ASSY DB37 SHLD GRAY 25M
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    DigiKey 2902074 Bulk 1
    • 1 $464.28
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    Mouser Electronics 2902074
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    Master Electronics 2902074
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    Sager 2902074 1
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    JRH Electronics 10-129020-7P

    CONN PLUG W/PINS
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    DigiKey 10-129020-7P Bag
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    TE Connectivity 290207-000

    Cable Accessories Boot Fluid Resistant Elastomer Black - Bulk (Alt: 290207-000)
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    Avnet Americas 290207-000 Bulk 18 Weeks 400
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    Newark 290207-000 Bulk 400
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    Onlinecomponents.com 290207-000
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    Interstate Connecting Components 290207-000
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    Avnet Abacus 290207-000 24 Weeks 400
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    Master Electronics 290207-000
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    Sager 290207-000 1
    • 1 $22.39
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    Find more 290207 price and stock on Findchips.com

    290207 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2902074 Phoenix Contact Cable Assemblies - D-Sub Cables - CABLE ASSY DB37 SHLD GRAY 25M Original PDF
    2902078 Phoenix Contact Panel Meters - Accessories, Industrial Controls, Meters, DIN RAIL ADAPTER Original PDF

    290207 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog EEM-MKT-DRA Order No.: 2902078 DIN rail adapter for EEM-MA600 and EEM-MA400 energy meters Product notes WEEE/RoHS-compliant since: 2011-01-20 Commercial data


    Original     		PDF EEM-MA600 EEM-MA400

    28F010

    Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
    Text: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP


    Original     		PDF 28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020

    diode in58

    Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
    Text: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors


    Original     		PDF unitB-FLK50/0 VIP-CAB-FLK50/0 VIP-CAB-FLK50/FR/OE/0 diode in58 OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog EEM-MA400 Order No.: 2901364 Energy measurement device to measure electrical parameters in low voltage installations up to 500 V, acquisition of total harmonic


    Original     		PDF EEM-MA400 RS-485 EEM-MA600 EEM-MA400 EEM-RS485-MA400

    8 PIN IC l2722

    Abstract: L165 equivalent L2722 equivalent schematic diagram converter input 12v to 24v 4a L272M equivalent SGS L272M L272 Circuit L272M amplifier l165 L165 op amp
    Text: L165 3A POWER OPERATIONAL AMPLIFIER OUTPUT CURRENT UP TO 3A LARGE COMMON-MODE AND DIFFERENTIAL MODE RANGES SOA PROTECTION THERMAL PROTECTION Pentawatt ± 18V SUPPLY DESCRIPTION The L165 is a monolithic integrated circuit in Pentawatt package, intended for use as power


    Original     		PDF L165V 8 PIN IC l2722 L165 equivalent L2722 equivalent schematic diagram converter input 12v to 24v 4a L272M equivalent SGS L272M L272 Circuit L272M amplifier l165 L165 op amp

    29F020

    Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
    Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program


    Original     		PDF 28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010

    25t65

    Abstract: tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830
    Text: Phillips Desc Philips Naed 36734-2 367342 375196 375196 37519-6 27556-0 27555-2 27558-6 209957 20995-7 38320-8 373902 373902 37390-2 246611 24661-1 299552 29955-2 299560 29956-0 347815 34781-5 348037 34803-7 37474-4 374769 37476-9 27086-8 239442 22300-8 370221


    Original     		PDF 100/300/W 100/300W 1000PAR64Q/MFL 1000PAR64Q/NSP 1000PAR64Q/WFL 1000T3 1000T3Q/P/CL 00-90A/99EW 25t65 tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog EEM-MA600 Order No.: 2901366 Energy measurement device to measure electrical parameters in low voltage installations up to 700 V, acquisition of individual harmonic


    Original     		PDF EEM-MA600 EEM-RS485-MA600 RS-485 EEM-MA600

    TN28F010

    Abstract: 29020
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 1024K 28F010 USA/E69Q/1093/5K/MS TN28F010 29020

    D28F010-120P1C4

    Abstract: D28F010-12 28F010150P 28F010P 29020 N28F010-200P1C4 D28F010 28F010
    Text: INTEL CORP M EM OR Y / L O G I C 15E D I MflSbl7b QObllOl 0 I ir'iraSMUWULfM^lrtU 28F010 T'H6-I5'Z7 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Program m ing Algorithm — 10 jus Typical Byte-Program


    OCR Scan     		PDF 28F010 1024K T-46-13-27 D28F010-120P1C4 D28F010-150P1C4 D28F010-200P1C4 N28F010-120P1C4 N28F010-150P1C4 N28F010-200P1C4 ER-20, D28F010-12 28F010150P 28F010P 29020 N28F010-200P1C4 D28F010

    SM28F001AX

    Abstract: AX-200 29020 PPH 2222 36 64 mbit static ram simm
    Text: in te i' SM28F001AX 1 MBYTE 512K x 16 CMOS FLASH SIMM High-Performance — 135 ns Maximum Access Time — 14.81 MB/s Read Transfer Rate 100,000 Rewrite Cycles Typical/ Component Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase 16 jjls Typical Word Write


    OCR Scan     		PDF SM28F001AX 80-pin --\05flu6enterline SM2BF001AX SM28F001 AX-200 ER-20, ER-24, 28F010 29020 PPH 2222 36 64 mbit static ram simm

    29020

    Abstract: No abstract text available
    Text: in te i 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju-s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		PDF 28F010 1024K 28F010-65 28F010-90 29020

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 |as Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F010 1024K 28F400B EFt-20, ER-24, RR-60, AP-316, AP-325,

    PPH 2222 36

    Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface


    OCR Scan     		PDF 28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N

    transistor t 2190

    Abstract: intel 2114 SmartDie 28F010
    Text: inte] 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10ns Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F010 1024K X2BF010-90 ER-20 ER-24, RR-60, AP-316, AP-325, USA/DP-019/694 transistor t 2190 intel 2114 SmartDie

    SmartDie

    Abstract: 28F010
    Text: intel PEHHLOIMOIiMIERf 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F010 1024K ER-20, ER-24, RR-60, AP-316, AP-325, SmartDie

    PLD intel

    Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
    Text: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program


    OCR Scan     		PDF Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD

    intel 28F010

    Abstract: N28F010-120 28F010 80C186 E28F010
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for


    OCR Scan     		PDF 28F010 1024K AP-316, AP-325 from3000 28F010-65 28F010-90 4fl2bl75 intel 28F010 N28F010-120 28F010 80C186 E28F010

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


    OCR Scan     		PDF 28F010 1024K EF010-120 TF28F010-120 ER-20, ER-24, RR-60, AP-316, AP-325

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		PDF 28F010 1024K 32-Pin 32-Lead

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan     		PDF 28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020

    intel 28F010

    Abstract: 28f01o-120 N28F010-120 28F010 80C186 E28F010 N28F010 P28F010 28f010-200 29020
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F010 1024K HR-20, ER-24, ER-28, RR-60, AP-316, AP-325 28F010-65 28F010-90 intel 28F010 28f01o-120 N28F010-120 28F010 80C186 E28F010 N28F010 P28F010 28f010-200 29020

    TN28F010

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F010 1024K 32-Pin 32-Lead 28F010-65 28F010-90 TN28F010

    AP-606

    Abstract: PCMCIA 1.0 28F0016SA MC020FLSP 292096
    Text: intei AP-606 APPLICATION NOTE Interchangeability of Series 1, Series 2, and Series 2 + Flash Memory Cards SEAN CASEY TECHNICAL MARKETING ENGINEER November 1994 _ IF ^ iL D IM lO K lÄ l^ ir 6-170 I Order Number: 292158-001 INTERCHANGEABILITY OF SERIES 1, SERIES 2, AND


    OCR Scan     		PDF AP-606 28F020 2048K 28F010 1024K AB-56 AP-360 28F008SA AP-361 AP-364 PCMCIA 1.0 28F0016SA MC020FLSP 292096