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    2902 TRANSISTOR Search Results

    2902 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2902ADM/B Rochester Electronics LLC Replacement for AMD part number AM2902ADMB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    2902 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ^vnl-dontLusto 20 STERN AVE. SPRINGRELO, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2902 (212) 227-6008 FAX (973) 376-8980 2N4915 (SILICON) NPN power transistors for use in power amplifier and switching circuits. Complement to PNP 2N4M8. MAXIMUM RATINGS Symbol


    Original     		PDF 2N4915 2N491S

    2N3855A

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2902 (212| 227-600B FAX: (973) 376-0060 20 STERN AVE. 3PHINGF1S-D, NEW JERSEY 07081 U.SA 2N3855A, Silicon Transistor absolute maximum ratings: (25°C) (unless otherwise specified) Vollagei Collector to Emitter v .'iO VullS Emitter to Base


    Original     		PDF 227-600B 2N3855A, 2N3855A

    Untitled

    Abstract: No abstract text available
    Text: tStml-dontLuckot ZPioJuati, Una. TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 3784980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS JEDECTO-61 FEATURES ALL TERMINALS ISOLATED FROM CASE RADIATION TOLERANT


    Original     		PDF 2N5330 JEDECTO-61 SPT5330

    infineon power cycling igbt3

    Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
    Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,


    Original     		PDF D-59581 200V-Trench- 1998-Kyoto 2003N 00V-IGBT³ 2004-N infineon power cycling igbt3 IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT igbt simulation IGBT2

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 378-2902 (212) 227-6008 FAX: (973) 378-8960 USA 2N3244 (SILICON) PNP silicon, transistors for medium-current, high-speed switching and driver applications. MAXIMUM RATINGS Rating Symbol Collcctor-Dasc Voltage


    Original     		PDF 2N3244

    2N3380

    Abstract: No abstract text available
    Text: 20STERNAVE SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 376-8080 U.SA 2N3380 P-CHANNEL DIFFUSED SILICON FIELD-EFFECT TRANSISTOR •ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage (Note 1) 30 V Gate-Source Voltage (Note 1) 30V «j


    Original     		PDF 20STERNAVE 2N3380 2N3380

    single phase inverters circuit diagram

    Abstract: single phase dual output inverter with three switch legs solar inverters circuit diagram 1ED020I12-S inverter circuit using driver ic 2ED020I12-FI heatsink water FF1000R17IE4 LQ66 2ED020I12-FI ALCAN IGBt driver 2ed020I12-FI
    Text: Benefits of System-oriented IGBT Module Design for High Power Inverters LUNIEWSKI Piotr Benefits of System-oriented IGBT Module Design for High Power Inverters Piotr Luniewski, Uwe Jansen INFINEON TECHNOLOGIES AG Max-Planck-Str. 5 Warstein, Germany Tel.: +2902 / 764 – 2306


    Original     		PDF AN2004-06, single phase inverters circuit diagram single phase dual output inverter with three switch legs solar inverters circuit diagram 1ED020I12-S inverter circuit using driver ic 2ED020I12-FI heatsink water FF1000R17IE4 LQ66 2ED020I12-FI ALCAN IGBt driver 2ed020I12-FI

    MAX1551

    Abstract: MAX1555EZK-T MAX1555 MAX1551-MAX1555 POK LED MAX1551EZK MAX1551EZK-T MAX1555EZK MAX1555EZ
    Text: 19-2902; Rev 0; 7/03 SOT23 Dual-Input USB/AC Adapter 1-Cell Li+ Battery Chargers Features ♦ Charge from USB or AC Adapter ♦ Automatic Switchover when AC Adapter is Plugged In ♦ On-Chip Thermal Limiting Simplifies Board Design ♦ Charge Status Indicator


    Original     		PDF MAX1551EZK-T OT23-5 MAX1555EZK-T MAX1551/MAX1555 MAX1555EZK MAX1551EZK MAX1551 MAX1555EZK-T MAX1555 MAX1551-MAX1555 POK LED MAX1551EZK MAX1551EZK-T MAX1555EZK MAX1555EZ

    YKB21

    Abstract: FFC-10BMEP1 CN101 CN001 2902 CN102 PCM2900 DEM-PCM2902 PCM2902 CN002
    Text: DEMĆPCM2900/2902 EVM User’s Guide August 2002 DAV Digital Audio/Speaker SLEU024 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF DEMPCM2900/2902 SLEU024 OPA2353UA CN101 YKB21 PCM2900, CN102 FFC-10BMEP1 CN101 CN001 2902 CN102 PCM2900 DEM-PCM2902 PCM2902 CN002

    Untitled

    Abstract: No abstract text available
    Text: DEMĆPCM2900/2902 EVM User’s Guide March 2007 Audio Converter Products, Digital Audio SLEU024A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF PCM2900/2902 SLEU024A OPA2353UA DEM-PCM2900/2902

    MAX1555EZK-T

    Abstract: MAX1555 MAX1555EZK MAX1551 MAX1551EZK MAX1551EZK-T MAX1551-MAX1555
    Text: 19-2902; Rev 0; 7/03 SOT23 Dual-Input USB/AC Adapter 1-Cell Li+ Battery Chargers The MAX1551/MAX1555 charge a single-cell lithium-ion Li+ battery from both USB and AC adapter sources. They operate with no external FETs or diodes, and accept operating input voltages up to 7V.


    Original     		PDF MAX1551/MAX1555 MAX1551 MAX1555 MAX1555EZK-T MAX1555EZK MAX1551EZK MAX1551EZK-T MAX1551-MAX1555

    29021i

    Abstract: equivalent integrated 2902f 2902 LTC2902 LINEAR TECHNOLOGY 009 1144 2902 TRANSISTOR
    Text: LTC2902 Programmable Quad Supply Monitor with Adjustable Reset Timer and Supply Tolerance DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Simultaneously Monitors Four Supplies 16 User Selectable Combinations of 5V, 3.3V, 3V, 2.5V, 1.8V, 1.5V and/or ±Adjustable Voltage


    Original     		PDF LTC2902 LTC2902-1) LTC2902-2) LTC1728-1 8/LTC1728-3 OT-23 LTC1728-2 5/LTC1728-5 LTC1985-1 29021i equivalent integrated 2902f 2902 LTC2902 LINEAR TECHNOLOGY 009 1144 2902 TRANSISTOR

    2n7000 darlington

    Abstract: 2N7000 ADI1318RI TO226AA
    Text: Order this data shaat by 2N7000/D MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N7000 Advance Information Small-Signal Transistor Field Effect N-Channel Enhancement-Mode Silicon Gate TMOS J . are designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.


    Original     		PDF 2N7000/D 2N7000 O-226AA) 2n7000 darlington 2N7000 ADI1318RI TO226AA

    coreless transformer Technology

    Abstract: Eupec Power Semiconductors 2ED020I12FA coreless 2ED020I12-F igbt driver ic igbt eupec 2ed020i12 Eupec 2A mosfet igbt driver stage
    Text: Press Release – May 2003 PCIM 2003 New IGBT Driver IC for Blocking Voltages up to 1200V based on Coreless Transformer Technology By introducing the 2ED020I12F, a half bridge Driver IC, eupec offers a reliable and cost effective solution for driving IGBT


    Original     		PDF 2ED020I12F, P-D-SO20 VDE0884) 2ED020I12-F D-59581 coreless transformer Technology Eupec Power Semiconductors 2ED020I12FA coreless igbt driver ic igbt eupec 2ed020i12 Eupec 2A mosfet igbt driver stage

    AU2902

    Abstract: AU2902N AU2902D
    Text: Philips Semiconductors Product specification Low power quad operational amplifier DESCRIPTION AU2902 PIN CONFIGURATION The AU 2902 consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages.


    OCR Scan     		PDF AU2902 100dB SL00523 AU2902 AU2902N AU2902D

    LM324A

    Abstract: lm324 generator wien LM324 as V to I converter lm224 lm324 single supply Oscillator LOW POWER operational amplifier LM324 supply voltages for lm324 LM324N LM324N PIN DIAGRAM LM224 14 PIN DIAGRAM
    Text: g MOTOROLA LM324, LM324A, LM224, LM 2902, LM 2902V Quad Low Power Operational Amplifiers The LM324 series are low-cost, quad operational amplifiers with true differential inputs. They have several distinct advantages over standard operational amplifier types in single supply applications. The quad amplifier


    OCR Scan     		PDF LM324 MC1741 LM324, LM324A, LM224, LM2902, LM2902V LM324A lm324 generator wien LM324 as V to I converter lm224 lm324 single supply Oscillator LOW POWER operational amplifier LM324 supply voltages for lm324 LM324N LM324N PIN DIAGRAM LM224 14 PIN DIAGRAM

    "Op Amp" lm 324

    Abstract: LM324 Signetics SA534D LM324F SA534N signetics lm324 LM324D
    Text: LM124/224/324/324A/ SA534/LM2902 Signetics Low Power Quad Op Amps Product Specification Linear Products DESCRIPTION FEATURES The LM 124/S A 534/LM 2902 series con­ sists of four independent, high-gain, in­ ternally frequency-com pensated opera­ tional am plifiers designed specifically to


    OCR Scan     		PDF LM124/224/324/324A/ SA534/LM2902 124/S 534/LM 100dB 30Vdc als05 LM124/224/324/324A/SA534/LM2902 "Op Amp" lm 324 LM324 Signetics SA534D LM324F SA534N signetics lm324 LM324D

    "Op Amp" lm 324

    Abstract: LM324DDD LM124D LM324N voltage rating 2902 V lm1242 Lm 324 ic
    Text: sgfìfl L M 1 2 4 /L M 2 2 4 /L M 3 2 4 , LM 124A /L M 224A /L M 324A , LM 2902 Low Power Quad Operational Amplifiers FEATURES • Internally frequency compensated for unity gain • Large dc voltage gain 100dB • Wide bandwidth unity gain (temperature compensated)


    OCR Scan     		PDF 100dB LM124 "Op Amp" lm 324 LM324DDD LM124D LM324N voltage rating 2902 V lm1242 Lm 324 ic

    Untitled

    Abstract: No abstract text available
    Text: f£\ h a f r f r CA124, CA224, CA324 LM324*, LM2902* i s s e m i c o n d u c t o r Quad Operational Amplifiers for Commercial, Industrial, and Military Applications March 1993 Features Description • Operation from Single or Dual Supplies The CA124, CA224, CA324, LM324, and LM 2902 consist of


    OCR Scan     		PDF CA124, CA224, CA324 LM324* LM2902* CA324, LM324,

    LM324 DIL

    Abstract: LM324N circuit DIAGRAM LM324NPD LM324DDD ic lm324N LM324N LM124D LM324N schematic LM324n power dissipation lm324 DUAL SUPPLY application
    Text: LM 12 4 / L M 2 2 4 / L M 3 2 4 , LM 124A/LM 224A/LM 324A, LM 2902 L o w P ow er Q uad O p eratio nal A m p lifie rs D lfte lr S O IL FEATURES G EN ER AL DESCRIPTION • Internaily frequency compensated for unity gain • Large dc voltage gain 100dB • Wide bandwidth unity gain


    OCR Scan     		PDF LM124/LM224/LM324, LM124A/LM224A/LM324A, LM2902 100dB 30Vdc 15Vdc 800MA) LM324 DIL LM324N circuit DIAGRAM LM324NPD LM324DDD ic lm324N LM324N LM124D LM324N schematic LM324n power dissipation lm324 DUAL SUPPLY application

    CA324

    Abstract: CA224 transistor v15 CA124 JCS-24 LM324AND CA2902 LM2902 LM324 LM 124 four amplifier
    Text: A R R 430EE71 MGE D SECTOR GD31bS7 4 •HAS C A 124, C A 224, C A 324, C A 2902 L M 3 2 4 *, L M 2 9 0 2 * I S Q u ad O p eratio n al Am plifiers F o r C o m m e rcia l, Ind ustrial, an d Military A p p licatio n s A ugust 1991 Features Description • Operation from Single or Dual Supplies


    OCR Scan     		PDF 430EE71 QD31bS7 CA124, CA224, CA324, CA2902 LM324* LM2902* 100dB CA324 CA224 transistor v15 CA124 JCS-24 LM324AND LM2902 LM324 LM 124 four amplifier

    UJT 2N2646

    Abstract: 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt UJT 2N2646 oscillators 22A01 ujt transistor
    Text: Silicon Unidirectional Switch - SUS Similar to 4-Layer Diodes, but has gate electrode that permits synchronization. V s V olts Nom Device Type Plastic Case 29-02 I TO-92 MUS4987 M US4988 's Min. Max. 6.0 7.5 10 9.0 jUA Max. m A M ax. ^ 1.5 0.5 500 150 Unijunction Transistors - UJT


    OCR Scan     		PDF ITO-92) MUS4987 MUS4988 IeB20 2A-01 2N4870 2N4871 2N2646 2N2647 2N4851 UJT 2N2646 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt UJT 2N2646 oscillators 22A01 ujt transistor

    DIAC 1n5758

    Abstract: 1N5758 diac DIAC 1N5761 1N5758 diac advantage 1N5761 1N5758A 1N5760 1N5761A DIAC 1n5760
    Text: Trigger Devices Trigger devices come under a variety o f d iffe re n t classifications, w ith somewhat d iffe rin g characteristics — U n ijun ctio n Transistors U nidirectional Switches B idirectional Switches Bilateral Triggers PUT D IA C SBS SUS UJT 4 -Layer Diodes


    OCR Scan     		PDF 1N5758/MPT20 1N5760/MPT28 1N5761/MPT32 1N5762 1N5758A 1N5759A 1N5760A 1N5761A 1N5762A MBS4991 DIAC 1n5758 1N5758 diac DIAC 1N5761 1N5758 diac advantage 1N5761 1N5758A 1N5760 1N5761A DIAC 1n5760

    transistor T79

    Abstract: LM324N LM224J
    Text: RAYTHEON-. SEMICONDUCTOR 57 » É J 75^73^.0 O O O M ^ 57C 0 4 4 4 9 .7597 360 RAYTHEON CO* PRO D U CT SPECIFICATIO N S Raytheon Single-Supply Quad Operational Amplifiers Features • ■ ■ ■ ■ ■ Large DC voltage gain — 100dB Compatible with all forms of logic


    OCR Scan     		PDF LM124/224/324 100dB LM124/224/324/2902 i73bO 5-01800A transistor T79 LM324N LM224J