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    KMM332F213CS-L

    Abstract: No abstract text available
    Text: KMM332F203CS-L KMM332F213CS-L DRAM MODULE KMM332F203CS-L & KMM332F213CS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3CS is a 2Mx32bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM332F203CS-L KMM332F213CS-L KMM332F213CS-L KMM332F20 2Mx32bits 28-pinTSOPII 72-pin

    2864b

    Abstract: S-2860B S-2864B s286xb 2860B
    Text: Rev.1.1 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.


    Original     		PDF S-2860B/2864B 64k-bit S-2860B S-2864B 32byte S-2864B: 28-pin 2864b s286xb 2860B

    PR 8501

    Abstract: PARALLEL E2PROM 2860B S-2860B S-2864B
    Text: Rev.1.1 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.


    Original     		PDF S-2860B/2864B 64k-bit S-2860B S-2864B 32byte S-2864B: 28-pin PR 8501 PARALLEL E2PROM 2860B

    Untitled

    Abstract: No abstract text available
    Text: Contents Features .1 Pin Assignment .1 Block Operation Mode .2


    Original     		PDF

    S-281XA

    Abstract: PARALLEL E2PROM
    Text: Rev.1.1 CMOS 16K-bit PARALLEL E2PROM S-2812A/2817A The S-2812A and the S-2817A are low power 2Kx8-bit parallel 2 E PROMs. The S-2812A features wide operating voltage range, and the S-2817A features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.


    Original     		PDF 16K-bit S-2812A/2817A S-2812A S-2817A 32byte S-2812A: S-281XA PARALLEL E2PROM

    7u23

    Abstract: No abstract text available
    Text: CMOS SRAM KM62256CLI-LV 32Kx8Bit Extended Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40°C to 85°C • Extended Operating Voltage : 3.0-5.5V • Fast Access Time - 3.3V Operation : 100ns Max.


    OCR Scan     		PDF KM62256CLI-LV 32Kx8Bit 100ns 72\x\N 108mW 385mW KM62256CLGI-LV 28-pin KM62256CLTGI-LV 28-PinTSOP 7u23

    ARD08

    Abstract: KM62256CL-LU
    Text: Preliminary CMOS SRAM KM62256CL-LU 32Kx8 Bit Extended Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage : 2.7 -5.5 V • Fast Access Time - 3.0V Operation : 100ns Max. - 3.3V Operation : 70ns (Max.) - 5.0V Operation : 55ns (Max.)


    OCR Scan     		PDF KM62256CL-LU 32Kx8 100ns KM62256CLG-LU 28-pin KM62256CLTG-LU 28-PinTSOP KM62256CLRG-LU KM62256CL-LU ARD08

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM62256CLE-LU 32Kx8 Bit Extended Voltage & Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage : 2.7-5.5V • Extended Temperature Range : -25 to 85°C • Fast Access Time - 3.0V Operation : 120ns Max.


    OCR Scan     		PDF KM62256CLE-LU KM62256CLE-LU 144-bit 32Kx8 DD2133ti

    Untitled

    Abstract: No abstract text available
    Text: KMM332F203CS-L KMM332F213CS-L DRAM MODULE KMM332F203CS-L & KMM332F213CS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3CS is a 2Mx32bits Dynamic Part Identification


    OCR Scan     		PDF KMM332F203CS-L KMM332F213CS-L KMM332F213CS-L KMM332F20 2Mx32bits KMM332F203CS-L5/L6 28-pinTSOPII 72-pin

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J

    TAA 981

    Abstract: MSM5117400
    Text: O K I Semiconductor MSM5 117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117400 304-Word MSM5117400 cycles/32ms A0-A10 b72424D TAA 981

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK58257BTM/BYM - 7 0 L L X /1 0 L L X 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM is 262.144 bits high speed C M O S static RAM organized as 3 2,768 CXK58257BTM CXK58257BYM 28 pin TSOP Plastic 28 pin TSOP (Plastic)


    OCR Scan     		PDF CXK58257BTM/BYM CXK58257BTM 32768-word CXK58257BTM/BYM CXK58257BYM 70LLX -10LLX 28PINTSOP

    km48v2104bs

    Abstract: No abstract text available
    Text: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3BS is a 2Mx32bits Dynamic Part Identification


    OCR Scan     		PDF KMM332F203BS-L KMM332F213BS-L KMM332F203BS-L KMM332F213BS-L KMM332F20 2Mx32bits 28-pinTSOPII 72-pin km48v2104bs