Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    28MAY02 Search Results

    28MAY02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2311DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2311DS 28-May-02

    Untitled

    Abstract: No abstract text available
    Text: r' 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2001 3 RELEASED EOR PUBLICATION OCT ,2001. LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. '“I 2 DIST / I J K — CHAMLEK -\ REVISIONS P LTR D - DESCRIPTION REVISED DATE ECR — 06 — 0 2 4 6 4 2


    OCR Scan     		PDF 170CT06 16EA/TRAY 31MAR2000