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    28F160 IC Search Results

    28F160 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    28F160 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28F016SA

    Abstract: AP-645 28F160S570 96hcc 28F016SV 28F160S3 28F160S5 28F320S5 28F016SV70 29212* intel
    Text: E AP-645 APPLICATION NOTE 28F160S3/S5 Compatibility with 28F016SA/SV June 1997 Order Number: 292203-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of


    Original     		PDF AP-645 28F160S3/S5 28F016SA/SV 56-lead 56-bump 56-lead 28F016SA AP-645 28F160S570 96hcc 28F016SV 28F160S3 28F160S5 28F320S5 28F016SV70 29212* intel

    TE28F160S3-100

    Abstract: DT28F160S3-75 28F016SA 28F016SV 28F160S3 28F160S5 28F320S3
    Text: E PRELIMINARY 3 VOLT FlashFile MEMORY 28F160S3 and 28F320S3 x8/x16 n n n n n n Two 32-Byte Write Buffers  2.7 µs per Byte Effective Programming Time Low Voltage Operation  2.7 V or 3.3 V V CC  2.7 V, 3.3 V or 5 V V PP n n 100 ns Read Access Time (16 Mbit)


    Original     		PDF 28F160S3 28F320S3 x8/x16) 32-Byte 64-Kbyte AP-393 28F016SV 28F016SA AP-607 TE28F160S3-100 DT28F160S3-75 28F016SA 28F160S5 28F320S3

    28F016SA

    Abstract: 28F016SV 28F160S3 28F160S5 28F320S3
    Text: E ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F320S3 Includes Extended Temperature Specifications n n n n n n Two 32-Byte Write Buffers  2.7 µs per Byte Effective Programming Time Low Voltage Operation  2.7 V or 3.3 V V CC  2.7 V, 3.3 V or 5 V V PP


    Original     		PDF 28F160S3, 28F320S3 32-Byte 64-Kbyte SC16SV 28F016SA AP-607 AP-610 28F016SA 28F016SV 28F160S3 28F160S5 28F320S3

    28F016SA

    Abstract: 28F016SV 28F160S3 28F160S5 28F320S3 TSOP 56 LAYOUT CG-041493 32MB SIMM
    Text: E ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F320S3 Includes Extended Temperature Specifications n n n n n n Two 32-Byte Write Buffers  2.7 µs per Byte Effective Programming Time Low Voltage Operation  2.7 V or 3.3 V V CC  2.7 V, 3.3 V or 5 V V PP


    Original     		PDF 28F160S3, 28F320S3 32-Byte 64-Kbyte SC16SV 28F016SA AP-607 AP-610 28F016SA 28F016SV 28F160S3 28F160S5 28F320S3 TSOP 56 LAYOUT CG-041493 32MB SIMM

    SDP-UNIV-48TS

    Abstract: GDP-f016-56ts sdp-6811-52b SDP-UNIV-44TQ SDP-UNIV-44PSO SDP-UNIV-44 sDP-st064-56ts 29DL640D 87C552 xc68hc11k1
    Text: Dataman-48UXP Intelligent Universal Programmer User′′s Manual Copyright Notice This document is copyrighted, 2000, 2001, 2002 by DATAMAN PROGRAMMERS LTD. All rights are reserved. DATAMAN PROGRAMMERS LTD. reserves the right to make improvements to the products described in this manual at any time without notice.


    Original     		PDF Dataman-48UXP Dataman-48UXP SDP-UNIV-48TS GDP-f016-56ts sdp-6811-52b SDP-UNIV-44TQ SDP-UNIV-44PSO SDP-UNIV-44 sDP-st064-56ts 29DL640D 87C552 xc68hc11k1

    intel 28f160

    Abstract: 28F008B3 28F016B3 28F160B3 28F400B3 28F800B3
    Text: E PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-MBIT, 8-MBIT, 16-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 28F008B3, 28F016B3 n n n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  12 V VPP Fast Production Programming


    Original     		PDF 16-MBIT 28F400B3, 28F800B3, 28F160B3 28F008B3, 28F016B3 64-KB FFH/40H intel 28f160 28F008B3 28F016B3 28F160B3 28F400B3 28F800B3

    ic 6116 datasheet from texas instruments

    Abstract: intel date code marking 28f160 SMT pitch roadmap intel 6116 uBGA device MARKing intel intel 04195 intel 28f160 SMT roadmap 28f800 56 pin csp process flow diagram
    Text: D Comprehensive User’s Guide for µBGA* Packages 1998 NOTE: For the most current µBGA* package related information, please refer to Intel's Website at http://www.intel.com/design/flcomp/packdata Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any


    Original     		PDF

    intel 28f160

    Abstract: 28F400B3 28F800B3 28F008B3 28F016B3 28F032B3 28F160B3 28F320B3
    Text: E PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3, 28F320B3 28F008B3, 28F016B3, 28F032B3 n n n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  12 V VPP Fast Production


    Original     		PDF 32-MBIT 28F400B3, 28F800B3, 28F160B3, 28F320B3 28F008B3, 28F016B3, 28F032B3 64-KB intel 28f160 28F400B3 28F800B3 28F008B3 28F016B3 28F032B3 28F160B3 28F320B3

    GT28F160B3B110

    Abstract: 28F008B3 28F016B3 28F160B3 28F400B3 28F800B3 TE28F800B3-T90
    Text: E PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-MBIT, 8-MBIT, 16-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 28F008B3, 28F016B3 n n n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  12 V VPP Fast Production Programming


    Original     		PDF 16-MBIT 28F400B3, 28F800B3, 28F160B3 28F008B3, 28F016B3 64-KB FFH/40H GT28F160B3B110 28F008B3 28F016B3 28F160B3 28F400B3 28F800B3 TE28F800B3-T90

    28F008B3

    Abstract: 28F016B3 28F320B3 28F400B3 28F640B3
    Text: 3 Volt Advanced Boot Block Flash Memory 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Preliminary Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming


    Original     		PDF 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 28F008B3 28F016B3 28F320B3 28F400B3 28F640B3

    intel date code marking 28f160

    Abstract: 28f160 flash device MARKing intel TE28F640C3BC90 te28f160 F8000-FFFFF 29064 Intel 28F640C3
    Text: 3 Volt Intel Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming


    Original     		PDF 28F800C3, 28F160C3, 28F320C3, 28F640C3 32Kword G88C2 intel date code marking 28f160 28f160 flash device MARKing intel TE28F640C3BC90 te28f160 F8000-FFFFF 29064 Intel 28F640C3

    rc28F640C3TC90

    Abstract: intel 28f160 290645-010 28f160 GT28F640C3BC100 Intel 28F640C3 TE28F640C3BC90 28F160C3 28F320C3 28F640C3
    Text: 3 Volt Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming


    Original     		PDF 28F800C3, 28F160C3, 28F320C3, 28F640C3 32Kword rc28F640C3TC90 intel 28f160 290645-010 28f160 GT28F640C3BC100 Intel 28F640C3 TE28F640C3BC90 28F160C3 28F320C3 28F640C3

    F160B3TA

    Abstract: No abstract text available
    Text: PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3, 28F320B3 28F008B3, 28F016B3, 28F032B3 n Flexible SmartVoltage Technology — 2.7 V-3.6 V Read/Program/Erase — 12 V V p p Fast Production Programming


    OCR Scan     		PDF 32-MBIT 28F400B3, 28F800B3, 28F160B3, 28F320B3 28F008B3, 28F016B3, 28F032B3 64-KB F160B3TA

    29060

    Abstract: DT28F320S3-110
    Text: intei ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F320S3 Includes Extended Temperature Specifications • Two 32-Byte Write Buffers — 2.7 |_is per Byte Effective Programming Time ■ Low Voltage Operation — 2.7 V or 3.3 V Vcc — 2.7 V , 3.3 V or 5 V V p p


    OCR Scan     		PDF 28F160S3, 28F320S3 32-Byte 64-Kbyte AP-610 28F160S5, 28F320S3, 28F320S5 29060 DT28F320S3-110

    Untitled

    Abstract: No abstract text available
    Text: in te i WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F320S3 Includes Extended Temperature Specifications Two 32-Byte Write Buffers — 2.7 us per Byte Effective Programming Time Low Voltage Operation — 2.7 V or 3.3 V Vcc — 2.7 V , 3.3 V or 5 V V p p


    OCR Scan     		PDF 28F160S3, 28F320S3 32-Byte Suspe292123 28F016SA

    TE28F160S375

    Abstract: 28f160 IC
    Text: intel PRELIMINARY 3 VOLT FlashFile MEMORY 28F160S3 and 28F320S3 x8/x16 • Two 32-Byte Write Buffers — 2.7 |_is per Byte Effective Programming Time ■ Low Voltage Operation — 2.7 V or 3.3 V Vcc — 2.7 V , 3.3 V or 5 V V p p ■ 100 ns Read Access Time (16 Mbit)


    OCR Scan     		PDF 28F160S3 28F320S3 x8/x16) 32-Byte 64-Kbyte TE28F160S375 28f160 IC

    Untitled

    Abstract: No abstract text available
    Text: WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F320S3 Includes Extended Temperature Specifications • Two 32-Byte Write Buffers — 2.7 us per Byte Effective Programming Time ■ Low Voltage Operation — 2.7 V or 3.3 V Vcc — 2.7 V , 3.3 V or 5 V V p p


    OCR Scan     		PDF 28F160S3, 28F320S3 32-Byte 64-Kbyte 00Filem AP-610 28F160S5, 28F320S3,