28c010T
Abstract: No abstract text available
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM FEATURES: DESCRIPTION: • 128k x 8-bit EEPROM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single event effects @ 25°C
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28C010T
MIL-STD-883,
3000gâ
28c010T
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Maxwell
Abstract: 28C010T 32-PIN 28C010
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram
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28C010T
32-pin
MIL-STD-883,
3000g
Maxwell
28C010T
28C010
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Untitled
Abstract: No abstract text available
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram
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28C010T
32-pin
MIL-STD-883,
3000gâ
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F3208
Abstract: No abstract text available
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES A0 Y Decoder Y Gating X Decoder Memory Array A6 A7 Address Buffer and Latch A16 Memory Data Latch FEATURES:
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28C010T
-32-pin
32-pin
28C010T
F3208
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28C010T - 12
Abstract: 28c010T
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram
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28C010T
32-pin
MIL-STD-883,
3000g
28C010T - 12
28c010T
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Untitled
Abstract: No abstract text available
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram
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28C010T
32-pin
MIL-STD-883,
3000g
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d32-02
Abstract: 28C010T 32-PIN
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 Memory A16 Data Latch FEATURES:
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28C010T
32-pin
28C010T
d32-02
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Untitled
Abstract: No abstract text available
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram
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28C010T
32-pin
10rad
MIL-STD-883,
3000g
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28C010T
Abstract: 32-PIN D32-02
Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram
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28C010T
32-pin
28C010T
D32-02
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32-PIN RAD-PAK FLAT PACKAGE
Abstract: 28C010T 28C011T 32-PIN
Text: 28C011T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 28C011T Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory
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28C011T
32-pin
32-PIN RAD-PAK FLAT PACKAGE
28C010T
28C011T
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ADC hard radiation
Abstract: 28/ADC hard radiation EEPROM 16MB SCS750 HSN-3000 79LV2040 29F0408 rad-pak 358 9240LP XP-40
Text: Microelectronics’ Product List Product Description Part Number Radiation Technology Package Screening Style Level FP DIP QFP Specification Status S or B Equivalent Data Sheet Active S, B, I, E S, B, I, E S, B, I, E S, B, I, E S, B, I, E Data Sheet Data Sheet
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MIL-PRF-38535
ISO9001
AS9100
ADC hard radiation
28/ADC hard radiation
EEPROM 16MB
SCS750
HSN-3000
79LV2040
29F0408
rad-pak 358
9240LP
XP-40
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28C010T
Abstract: No abstract text available
Text: 28C011T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 28C011T Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory
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28C011T
28C010T
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