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    28C010 Search Results

    28C010 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    X28C010FI-15 Rochester Electronics LLC EEPROM Visit Rochester Electronics LLC Buy
    X28C010W Renesas Electronics Corporation 5V, Byte Alterable EEPROM Visit Renesas Electronics Corporation
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    28C010 Price and Stock

    Microchip Technology Inc AT28C010-12JU-T

    IC EEPROM 1MBIT PARALLEL 32PLCC
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    DigiKey AT28C010-12JU-T Digi-Reel 1,479 1
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    AT28C010-12JU-T Cut Tape 1,479 1
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    AT28C010-12JU-T Reel 750 750
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    Mouser Electronics AT28C010-12JU-T
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    Ameya Holding Limited AT28C010-12JU-T 820
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    Avnet Silica AT28C010-12JU-T 9 Weeks 750
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    EBV Elektronik AT28C010-12JU-T 8 Weeks 750
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    Microchip Technology Inc AT28C010-12TU-T

    IC EEPROM 1MBIT PARALLEL 32TSOP
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    DigiKey AT28C010-12TU-T Cut Tape 1,223 1
    • 1 $55.59
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    Microchip Technology Inc AT28C010E-15TU-T

    IC EEPROM 1MBIT PARALLEL 32TSOP
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    DigiKey AT28C010E-15TU-T Digi-Reel 947 1
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    AT28C010E-15TU-T Cut Tape 947 1
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    Avnet Americas AT28C010E-15TU-T Reel 1,500
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    Newark AT28C010E-15TU-T Reel 1,500
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    Master Electronics AT28C010E-15TU-T
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    Microchip Technology Inc AT28C010-15TU-T

    IC EEPROM 1MBIT PARALLEL 32TSOP
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    DigiKey AT28C010-15TU-T Cut Tape 801 1
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    Avnet Americas AT28C010-15TU-T Reel 1,500
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    Newark AT28C010-15TU-T Reel 1,500
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    Master Electronics AT28C010-15TU-T
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    Microchip Technology Inc AT28C010-12JU-235

    IC EEPROM 1MBIT PARALLEL 32PLCC
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    DigiKey AT28C010-12JU-235 Reel 750 750
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    Find more 28C010 price and stock on Findchips.com

    28C010 Datasheets (343)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28C010-120 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    28C010-150 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    28C010-200 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    28C010-250 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    28C010H-120 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    28C010H-150 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    28C010H-200 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    28C010H-250 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    28C010RP Maxwell Technologies 1 MEGABIT EEPROM MCM 128K x 8 - BIT Original PDF
    28C010TdieDB-12 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDB-15 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDB-20 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDE-12 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDE-15 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDE-20 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDI-15 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDI-20 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDS-12 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDS-15 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    28C010TdieDS-20 Maxwell Technologies IC EEPROM PARL 1MBIT 128K x 8 5V 32DIP Original PDF
    ...

    28C010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram


    Original     		PDF 28C010T 32-pin MIL-STD-883, 3000g

    F3208

    Abstract: No abstract text available
    Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES A0 Y Decoder Y Gating X Decoder Memory Array A6 A7 Address Buffer and Latch A16 Memory Data Latch FEATURES:


    Original     		PDF 28C010T -32-pin 32-pin 28C010T F3208

    28c010T

    Abstract: No abstract text available
    Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM FEATURES: DESCRIPTION: • 128k x 8-bit EEPROM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single event effects @ 25°C


    Original     		PDF 28C010T MIL-STD-883, 3000gâ 28c010T

    28C010T - 12

    Abstract: 28c010T
    Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram


    Original     		PDF 28C010T 32-pin MIL-STD-883, 3000g 28C010T - 12 28c010T

    tsop 338

    Abstract: 28c010 28C010 Atmel 4C016 4b23 4h5229 4A05 MIL-M-38535 2D93 6F9630
    Text: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C010 CMOS EEPROM RELIABILITY DATA* - 150°C DYNAMIC OPERATING LIFE TEST - CYCLE TEST - 200°C RETENTION BAKE - 125°C OPERATING LIFE TEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC) - 15 PSIG PRESSURE POT


    Original     		PDF AT-28C010 MIL-M-38535 AT-28C256 AT-28C040 AT-28C010 7G9822 6H9708 9G9937 9G9939 tsop 338 28c010 28C010 Atmel 4C016 4b23 4h5229 4A05 2D93 6F9630

    Untitled

    Abstract: No abstract text available
    Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram


    Original     		PDF 28C010T 32-pin 10rad MIL-STD-883, 3000g

    28C010T

    Abstract: 32-PIN D32-02
    Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram


    Original     		PDF 28C010T 32-pin 28C010T D32-02

    28C010

    Abstract: 28C010TRP-120 28C010TRP-150 28C010TRP-175 28C010TRP-200 32-PIN D32-02
    Text: SPACE ELECTRONICS INC. 128K X 8-BIT EEPROM SPACE PRODUCTS 28C010TRP VCC 1 RDY/BUSY 32 A15 A14 RES A12 WE A7 A13 A6 A8 CE A5 A9 WE A11 RES A3 SEi 28C010TRP A2 High Voltage Generator VSS A16 A4 A0 I/O7 I/O0 I/O6 I/O1 I/O5 I/O2 I/O4 VSS I/O3 RDY/Busy I/O Buffer and


    Original     		PDF 28C010TRP 00Rev7 28C010 28C010TRP-120 28C010TRP-150 28C010TRP-175 28C010TRP-200 32-PIN D32-02

    d32-02

    Abstract: 28C010T 32-PIN
    Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 Memory A16 Data Latch FEATURES:


    Original     		PDF 28C010T 32-pin 28C010T d32-02

    28C010TRP-120

    Abstract: 28C010TRP-150 28C010TRP-175 28C010TRP-200 32-PIN 28c010T
    Text: SPACE ELECTRONICS INC. 128K X 8-BIT EEPROM SPACE PRODUCTS 28C010TRP VCC 1 RDY/BUSY 32 A15 A14 RES A12 WE A7 A13 A6 A8 CE A5 A9 WE A11 RES A3 SEi 28C010TRP A2 High Voltage Generator VSS A16 A4 A0 I/O7 I/O0 I/O6 I/O1 I/O5 I/O2 I/O4 VSS I/O3 RDY/Busy I/O Buffer and


    Original     		PDF 28C010TRP 99Rev7 28C010TRP-120 28C010TRP-150 28C010TRP-175 28C010TRP-200 32-PIN 28c010T

    Untitled

    Abstract: No abstract text available
    Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram


    Original     		PDF 28C010T 32-pin MIL-STD-883, 3000gâ

    Maxwell

    Abstract: 28C010T 32-PIN 28C010
    Text: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram


    Original     		PDF 28C010T 32-pin MIL-STD-883, 3000g Maxwell 28C010T 28C010

    AT28C010

    Abstract: No abstract text available
    Text: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum


    Original     		PDF 128-byte 0353E 06/99/xM AT28C010

    28C010

    Abstract: 28c010-15 1N914 CAT28C010
    Text: Advanced Information 28C010 128K x 8 1024K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120 ns ■ Single 5V ■ Automatic Page Write Operation: ± 10% Supply –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: ■ End of Write Detection:


    Original     		PDF CAT28C010 1024K-Bit 28C010 10mmx14mm) 8mmX20mm) 500/Reel 120ns 150ns 28C010 28c010-15 1N914 CAT28C010

    atmel 811

    Abstract: AT28C010 Mil
    Text: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation


    Original     		PDF 128-Bytes 128-Byte AT28C010 0010C 10/98/xM atmel 811 AT28C010 Mil

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


    Original     		PDF 2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB

    Untitled

    Abstract: No abstract text available
    Text: X Preliminary Information 1 Megabit Module XM 28C010 H S T 128K x 8 Bit 5 Volt, Byte Alterable E2PROM T Y P IC A L F E A T U R E S • High Density 1 Megabit 128K x 8 E2PROM Module • Access Tim e of 120 ns at -5 5 °C to +125°C • SIMPLE Byte and Page Write


    OCR Scan     		PDF 28C010 X28C256 32-Pin FHDF06 XM28C010

    28C010-120

    Abstract: 28C0102 28C010 400103 28C010-200
    Text: 28C010 1024K High Speed EEPROM EEPROMS Technology, Incorporated July 1992 Features • Military, Extended and Commercial Temperature Rangea • S 5 °C to +125°C Operation Military . -40°C to +85°C Operation (Extended) • 0°C to +70°C Operation (Commercial)


    OCR Scan     		PDF 28C010 1024K 120mA 850pA 28C010) 28C010H) 28C010 400103/A 28C010-120 28C0102 400103 28C010-200

    Untitled

    Abstract: No abstract text available
    Text: 1MegabitEEPROM- Radiation Ha r d e n e d O f t P H 1 ft P P P Z O w v I v b For Space Applications l x l 1 2 8 k X M o r y e m 8 E E P R O M M i c r o c i r c u i t DATA INPUTS/OUTPUTS 1/00 - 1/07 Vcc GND ÖE SEI's 28C010ERP RP for RAD-PAK high density 1


    OCR Scan     		PDF 28C010ERP 28C010ERP AT28C010 128-byte

    28C010-200

    Abstract: 28C010-150 28C010-120 28c010 28C010-250 M28C010
    Text: 28C010 Technology, Incorporated 1024K High Speed EEPROM July 1992 Features Data Protection • Hardware: Power Up/Down Protection Circuitry • JEDEC-Approved Software Write Protection Military, Extended and Commercial Temperature Ranges • S S CC to *12S°C Operation Military


    OCR Scan     		PDF 28C010 1024K 28C010) 28C010H) 28C010 128Kx8EEPR0M 400103/A 28C010-200 28C010-150 28C010-120 28C010-250 M28C010

    Untitled

    Abstract: No abstract text available
    Text: MODULES Q/28C010 Timer E2 1024K Electrically Erasable PROM O ctober 1989 Description Features • CM O S Technology ■ M ilitary Tem perature Range ■ L o w P ow er O peration • 70 m A A ctive Current • 2 m A S tandby Current ■ On-Chip Timer • A utom atic E rase B efore Write


    OCR Scan     		PDF Q/E28C010 1024K 28C256 D400066/A MQ/ME28C010 28C010 MD400066/A

    ne 5555 timer

    Abstract: No abstract text available
    Text: Lj 3 E ì> ñin233 ÜG03Ô2E S14 « S E E SEEÛ TECHNOLOGY INC Technology, Incorporated 1024K High Speed EEPROM Ju ly 1992 Features • Military, Extended and Commercial Temperature Rangea • -S 5°C to +125°C Operation Military • -4 0 °C to +85°C Operation (Extended)


    OCR Scan     		PDF in233 1024K 28C010) 28C010H) 120nsec 400103/A ne 5555 timer

    Untitled

    Abstract: No abstract text available
    Text: XIC GR INC ^^41743 SBE ]> □ □ □ 3 7 h 2 D 41 « X I C Preliminary Information 1 Megabit Module 28C010 128K X 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • High Density 1 Megabit 128K x 8 E2PROM Module • Access Time of 120 ns at -55°C to +125°C


    OCR Scan     		PDF XM28C010 X28C256 32-Pin X28C0101Megabit

    Untitled

    Abstract: No abstract text available
    Text: MODULES 28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features • SEEQ's 28C010 is a CMOS 5V only, 128Kx 8 Elec­ trically Erasable Programmable Read Only Memory EEPROM . The 28C010 consists o f4 28C256 (32K x 8) CMOS EEPROMs and a 2 to 4 line decoder in LCC


    OCR Scan     		PDF M28C010 1024K MM28C010 128Kx 28C256 32pinmodule MD400044/B 28C010