Untitled
Abstract: No abstract text available
Text: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.08 05/2009 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most
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MC9S12XS256
MC9S12XS
MC9S12XS128
MC9S12XS64
HCS12
MC9S12XS256RMV1
S12XS
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diode 1N 4002
Abstract: 1N4001 1N4007 DO-204AL J-STD-002B Diodes 1n 4004 1N4007 vishay 1N4007 VISHAY 88503 IN 4004 diodes 1n4001 diodes
Text: 1N4001 thru 1N4007 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V IR 5.0 µA Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current
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1N4001
1N4007
DO-204AL
DO-41)
DO-204AL,
UL-94V-0
28-Apr-05
diode 1N 4002
1N4007
DO-204AL
J-STD-002B
Diodes 1n 4004
1N4007 vishay
1N4007 VISHAY 88503
IN 4004 diodes
1n4001 diodes
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S12XS
Abstract: MC9S12XS256RMV1 S12XS256 Freescale HCS12X PFlash generator cr 665 bosch 128K8 9S12XS256 bosch can 2.0A RB1M transistor a614 PIN CONFIGURATION
Text: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.13 08/2012 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most
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MC9S12XS256
MC9S12XS
MC9S12XS128
MC9S12XS64
HCS12
MC9S12XS256RMV1
S12XS
S12XS256
Freescale HCS12X PFlash
generator cr 665 bosch
128K8
9S12XS256
bosch can 2.0A
RB1M
transistor a614 PIN CONFIGURATION
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BOSCH 0 261 210 691
Abstract: XGate
Text: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.10 05/2010 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most
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MC9S12XS256
MC9S12XS
MC9S12XS128
MC9S12XS64
HCS12
MC9S12XS256RMV1
S12XS
BOSCH 0 261 210 691
XGate
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Untitled
Abstract: No abstract text available
Text: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous
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BFR183TF
OT-490
D-74025
28-Apr-05
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GI824
Abstract: No abstract text available
Text: GI820 thru GI828 Vishay Semiconductors Fast Switching Plastic Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 50 V to 800 V IFSM 300 A trr 200 ns VF 1.05 V IR 10 µA Tj max. 150 °C Case Style P600 Features Mechanical Data • • • • •
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GI820
GI828
UL-94V-0
J-STD-002B
MIL-STD-750,
28-Apr-05
GI824
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Untitled
Abstract: No abstract text available
Text: SRP300A thru SRP300K Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 800 V IFSM 150 A trr 100 ns, 150 ns, 200 ns IR 10 µA VF 1.3 V Tj max. 125 °C DO-201AD Features • • • • • Glass passivated chip junction
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SRP300A
SRP300K
DO-201AD
DO-201AD,
UL-94V-0
J-STD-002B
MIL-STD-750,
50mVp-p
28-Apr-05
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BY254P
Abstract: No abstract text available
Text: BY251P thru BY255P Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 200 V to 1300 V IFSM 150 A IR 5.0 µA VF 1.1 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current, IR less than 0.1 µA
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BY251P
BY255P
DO-201AD
DO-201AD,
UL-94V-0
J-STD-002B
MIL-STD-750,
50mVp-p
28-Apr-05
BY254P
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Untitled
Abstract: No abstract text available
Text: P600A thru P600M Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 1000 V IFSM 400 A VF 0.9 V, 1.0 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features • • • • Low forward voltage drop
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P600A
P600M
UL-94V-0
J-STD-002B
MIL-STD-750,
28-Apr-05
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Untitled
Abstract: No abstract text available
Text: BFQ81 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Small feedback capacitance Low noise figure e3 Low cross modulation Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 18991
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BFQ81
2002/95/EC
2002/96/EC
OT-23
BFQ81
BFQ81-GS08
D-74025
28-Apr-05
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Untitled
Abstract: No abstract text available
Text: XOSM-573 Vishay Dale Surface Mount Oscillator FEATURES • Miniature Package • Tri-state enable/disable • TTL/HCMOS compatible • Tape and Reel • IR Re-flow • 3.3V input voltage The XOSM-573 series is an ultra miniature package clock oscillator with dimensions 7.0 x 5.0 x 1.6 mm. It is mainly used in portable PC
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XOSM-573
XOSM-573
25PPM)
50PPM)
100PPM)
28-Apr-05
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Untitled
Abstract: No abstract text available
Text: XOSM-55 Vishay Dale J - Lead Plastic Clock Oscillators FEATURES • J-Lead plastic surface mount • SG-615 compatible • Wide frequency range • Low cost • Tri-state enable/disable The XOSM-55 series oscillator is a J-Lead plastic tri-state enable/disable controled
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XOSM-55
SG-615
XOSM-55
000MHz
999MHz
50PPM)
100PPM)
28-Apr-05
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BFR181TF
Abstract: No abstract text available
Text: BFR181TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous
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BFR181TF
OT-490
OT-490
08-Apr-05
BFR181TF
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manual bosch al 1450 dv
Abstract: MC9S12XEP100RMV1 9s12xeq384 144 QFP transistor k 2761 bosch al 60 dv 1419 bosch AL 1411 DV BOSCH 7.4.9 Variable resistor 10K ohm 103 9s12xet256 S12XFTM256K2V1
Text: MC9S12XEP100 Reference Manual Covers MC9S12XE Family HCS12X Microcontrollers MC9S12XEP100RMV1 Rev. 1.13 11/2007 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most current. A printed copy may be an earlier revision. To verify you have the latest information available, refer
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MC9S12XEP100
MC9S12XE
HCS12X
MC9S12XEP100RMV1
S12XE-Family
manual bosch al 1450 dv
9s12xeq384 144 QFP
transistor k 2761
bosch al 60 dv 1419
bosch AL 1411 DV
BOSCH 7.4.9
Variable resistor 10K ohm 103
9s12xet256
S12XFTM256K2V1
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Untitled
Abstract: No abstract text available
Text: BFR182TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous
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BFR182TF
OT-490
D-74025
28-Apr-05
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Untitled
Abstract: No abstract text available
Text: GI850 thru GI858 Vishay Semiconductors Fast Switching Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 800 V IFSM 100 A trr 200 ns IR 10 µA VF 1.25 V Tj max. 150 °C DO-201AD Features • • • • Fast switching for high efficiency
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GI850
GI858
DO-201AD
DO-201AD,
UL-94V-0
J-STD-002B
MIL-STD-750,
50mVp-p
28-Apr-05
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IN 5402 rectifier
Abstract: No abstract text available
Text: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current
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1N5400
1N5408
DO-201AD
DO-201AD,
UL-94V-0
J-STD-002B
MIL-STD-750,
DO-204AL
DO-41)
28-Apr-05
IN 5402 rectifier
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Untitled
Abstract: No abstract text available
Text: BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BFR193T
BFR193TW
2002/95/EC
2002/96/EC
OT-23
BFR193TW
OT-323
D-74025
28-Apr-05
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M100M
Abstract: M100A M100B M100D M100G M100J M100K
Text: M100A thru M100M Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 50 A IR 1.0 µA VF 1.0 V, 1.1 V Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current
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M100A
M100M
DO-204AL
DO-41)
DO-204AL,
UL-94V-0
J-STD-002B
MIL-STD-750,
M100M
M100B
M100D
M100G
M100J
M100K
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MARKING SMD npn TRANSISTOR 690
Abstract: smd transistor E3 BFQ6 transistor smd .PB v1
Text: BFQ67F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous
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BFQ67F
OT-490
D-74025
28-Apr-05
MARKING SMD npn TRANSISTOR 690
smd transistor E3
BFQ6
transistor smd .PB v1
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - LOC ALL RIGHTS RESERVED. AD DIST R E V IS IO N S 00 LTR H DESCRIPTION EG 0G 3C 0209 DATE 05 DWN 28APR05 APVD BSV JLG .000 D THE NOTED DIMENSION APPLIES AT THE
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28APR05
31MAR2000
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UMCC - AT
Abstract: MMCX umcc cable pc a plc
Text: 2 THIS DRAWING IS U N PUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION LOC A LL RIGHTS RESERVED. HT D IST R E V IS IO N S 00 DESCRIPTION HXF DF 28APR05 NOTES 1. HIRO SE C O M PATIBLE E LEC TRIC AL TESTING FOR: C O N TIN UITY AND SHO RTS. H I- P O T AT 1 5 0
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28APR05
100ms
28APR05
13JUN05
31MAR2000
10MAR05
JD002574
UMCC - AT
MMCX umcc
cable pc a plc
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWING IS UNPU BLISH ED . RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATIO N LOC A LL RIGHTS RE5ERVED. HT DIST R E V IS IO N S 00 D ESCRIPTION 28APR05 HXF DF NOTES 1. HIR OSE C OM PATIB LE ELEC TRIC AL TESTING FOR: CONTINUITY AND SHORTS. H I- P O T AT ' 5 0
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200mm
100ms
31MAR2000
10MAR05
JD002574
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS D IS T FT LTR DESCRIPTION DATE DWN APVD GS B REVISED PER 0G 3B - 023 0- 0 5 4 /2 7 /0 5 SS B1 REVISED PER E C 0 - 0 9 - 0 2 1 826
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0G3B-0230-05
EC0-09-021826
07JAN10
31MAR2000
us044809
\0G3B-0230-05\213908
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