Untitled
Abstract: No abstract text available
Text: Stick-Type Light Meters ߜ Accuracy: ±3% + 10 digits CIE @ 2856k (A ߜ Portability and Simplicity– One-Hand Operation ߜ Accurate Visible Compensation Filter f1 is Used ߜ Measurment Rate 2.5/sec ߜ Range: From 20 to 200000 Lux ߜ Selective Lux and
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Untitled
Abstract: No abstract text available
Text: Stick-Type Light Meters ߜ Accuracy: ±3% + 10 digits CIE @ 2856k (A ߜ Portability and Simplicity– One-Hand Operation ߜ Accurate Visible Compensation Filter f1 is Used ߜ Measurment Rate 2.5/sec ߜ Range: From 20 to 200000 Lux ߜ Selective Lux and
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IC vertical lg
Abstract: MW3736CKH
Text: CCD Area Image Sensor MW3736CKH 11mm 2/3 inch 768H CCD Area Image Sensor • Overview ■ Pin Assignments The MW3736CKH is a 11mm (2/3 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section
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MW3736CKH
MW3736CKH
IC vertical lg
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B14-38
Abstract: JEDEC B14-38 DY10 R877 R877-01 10-STAGE PIN BASE B14-38 lm 565 pin diagram
Text: PHOTOMULTlPLlER TUBES R877, R877-01 For Scintillation Counting, 127mm 5 Inch Diameter Bialkali Photocathode, 10-Stage, Head-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode MateriaI Minimum Effective Area R877
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R877-01
127mm
10-Stage,
SE-171-41
TPMH1112E03
B14-38
JEDEC B14-38
DY10
R877
R877-01
10-STAGE
PIN BASE B14-38
lm 565 pin diagram
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E678-12L
Abstract: R1878 DY10 Hamamatsu Photomultiplier Socket 12 Pin
Text: PHOTOMULTIPLIER TUBE R1878 For Photon Counting Applications Excellent Transit Time Spread, Low After Pulse 19mm 3/4 Inch Diameter, Multialkali Photocathode, 10-Stage, Head-on Type GENERAL Parameter Spectral Response Wavelength of Maximum Response Material
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R1878
10-Stage,
12-pin
E678-12D
SE-171-41
TPMH1222E02
E678-12L
R1878
DY10
Hamamatsu Photomultiplier Socket 12 Pin
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HAMAMATSU E849
Abstract: e849-35 E849-34 e849 Hamamatsu Photomultiplier Socket 12 Pin E678-13A pmt divider circuit windmill design R1463 R1463P
Text: PHOTOMULTIPLIER TUBES R1463, R1463P High Anode Sensitivity at Low Supply Voltage, 13mm 1/2 Inch Diameter, 10 Stage, Head-On Type, Multialkali Photocathode, (185nm to 850nm) The Hamamatsu R1463 is a 13mm (1/2") diameter, head-on type photomultiplier tube having a multialkali photocathode designed for
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R1463,
R1463P
185nm
850nm)
R1463
R1463P
S-164-40
TPMH1216E01
HAMAMATSU E849
e849-35
E849-34
e849
Hamamatsu Photomultiplier Socket 12 Pin
E678-13A
pmt divider circuit
windmill design
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PNA2083M
Abstract: PNA2803M
Text: Darlington Phototransistors PNA2803M Darlington Phototransistor Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes
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PNA2803M
2856K
PNA2083M
PNA2803M
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DY11
Abstract: B20-102 ic lm 741 ch E678-20A ic 741 datasheet R3235 R3234-01 R3235-01 Hamamatsu Photomultiplier Socket 12 Pin
Text: HIGH–SPEED PHOTON COUNTING PHOTOMULTIPLIER TUBES R3234–01, R3235–01 High–speed Photon Counting and Fluorescence Measurement 51mm 2 Inch Diameter, 12–stage, Head–on Type R3234–01:Borosilicate Window (300 to 650nm) R3235–01:Synthetic Silica Window (160 to 650nm)
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R3234
R3235
650nm)
DY11
B20-102
ic lm 741 ch
E678-20A
ic 741 datasheet
R3234-01
R3235-01
Hamamatsu Photomultiplier Socket 12 Pin
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E678-21A
Abstract: photomultiplier R331-05 IC-1920 IC Tubes R331 Corning 5-58
Text: PHOTOMULTIPLIER TUBES R331, R331-05 For Liquid Scintillation Counting Bialkali Photocathode, 51mm 2 Inch Diameter, 12 Stages, Head-On Type The R331 and the R331-05 are 51mm (2 Inch) diameter series photomultiplier tubes specifically developed for the liquid scintillation counting. They feature low background noise, high tritium efficiency, good
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R331-05
R331-05
S-164-40
TPMH1209E01
E678-21A
photomultiplier
IC-1920
IC Tubes
R331
Corning 5-58
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E678-14T
Abstract: E2624 R7056 photomultiplier tube Hamamatsu Photomultiplier Socket 14 Pin R7056 pmt E2624 SHV CONNECTOR r642 RG-174 bnc E678-14C
Text: PHOTOMULTIPLIER TUBES R6427, R7056 Fast time response, For scintillation counting and high energy physics, R6427: Borosilicate glass, R7056: UV glass GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area
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R6427,
R7056
R6427:
R7056:
R6427
14-pin
E678-14C
SE-171-41
TPMH1187E04
E678-14T
E2624
R7056 photomultiplier tube
Hamamatsu Photomultiplier Socket 14 Pin
R7056
pmt E2624
SHV CONNECTOR
r642
RG-174 bnc
E678-14C
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R580
Abstract: DY10 TPMHB0204EA
Text: PHOTOMULTlPLlER TUBE R580 For Scintillation Counting and High Energy Physics 38mm 1-1/2 lnch Diameter, 10–stage, Bialkali Photocathode, Head–On Type GENERAL Description/Value 300 to 650 420 Bialkali 34 Borosilicate glass Linear focused 10 3 7 JEDEC No.B12–43
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SE-171-41
TPMH1100E02
R580
DY10
TPMHB0204EA
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R758
Abstract: R636 R636-10 TPMSA0027EC R758-10
Text: PHOTOMULTlPLlER TUBES R636–10, R758–10 UV to Near IR R636–10:185 to 930 nm, R758–10:160 to 930nm Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response
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930nm)
S-164-40
TPMS1016E03
R758
R636
R636-10
TPMSA0027EC
R758-10
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bpw 104
Abstract: a850
Text: BPW 34S E9087 SIEMENS FEATURES • Especially suitable tor applicatons from 400 nm toitOOnm • Short switching time (typ. 20 ns) • Suitable for vapor-phase and IR-reflow soldering • Reverse guilwing Characteristics Ta =25°C, standard light A, T=2856k
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E9087)
2856k
BPW34S(
bpw 104
a850
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Untitled
Abstract: No abstract text available
Text: SIEMENS C M P N T S t OPTO M4E D • Ô53b32h QGQS5S1 H « S I E X SIEM ENS BPX38 SERÍES PHOTOTRANSISTOR T -4 1 -6 1 Package Dimensions in Inches mm .113128} Maximum Ratings Operating and Storage Temperature T „ J . -55*C to +125”C
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53b32h
BPX38
23b35b
GGGS222
1200nm
r-41-61
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PN303
Abstract: No abstract text available
Text: Panasonic PIN Photodiodes PN303 PIN Photodiode For optical control systems • Features • Fast response which is well suited to high speed m odulated light detection : tr, tf = 50 ns typ. • High photodetection sensitivity and wide dynamic responsivity
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PN303
900nm
PN303
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PANASONIC MA
Abstract: 2856K PN107 PN108
Text: Panasonic Phototransistors PN107, PN108 Silicon NPN Phototransistors For optical control system s • F eatures • High sensitivity : I C e l = 5 mA (min.) (at L = 100 lx) • N arrow directional sensitivity for effective use o f light input • Fast response : tr = 5 (_ls (typ.)
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PN107,
PN108
PN108)
2856K
PANASONIC MA
2856K
PN107
PN108
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PN127
Abstract: No abstract text available
Text: Panasonic Phototransistors PN127 Silicon NPN Phototransistor U n it: mm For optical control systems Type number : Emitter mark Blue • Features • High sensitivity • G ood collector photo current linearity with respect to optical pow er input • Fast response : tr = 2.5 |^s (typ.)
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PN127
PN127
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100S
Abstract: PN106 KS2500
Text: Panasonic Phototransistors PN106 Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • F a st resp o n se : tr = 3.5 |^s typ. • N arro w directional sensitivity fo r effective use o f lig h t input • S ignal m ixing c ap ab ility using ba se pin
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PN106
100S
PN106
KS2500
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PN101
Abstract: No abstract text available
Text: Panasonic Phototransistors PN101 Silicon NPN Phototransistor For optical control systems • Features • High sensitivity • W ide spectral responsivity, suited for detecting GaAs L E D ’s • Low dark current : I C e o = 5 nA typ. • Fast response : tr, tf = 3 |xs (typ.)
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PN101
2856K
PN101
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LIGHT POSITION CONTROL
Abstract: PNA3201F
Text: Panasonic PIN Photodiodes PNA3201F PIN Photodiode For optical control systems • Features • High sensitivity and low dark current • For one-dim ensional light-point position detection • G ood positional linearity • Small plastic package I Absolute Maximum Ratings Ta = 25°C
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PNA3201F
2856K)
900nm)
LIGHT POSITION CONTROL
PNA3201F
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LT 5242
Abstract: LT 5242 H
Text: F2Z L U — + f — ^ ^ 5242 L 0 fi 0000127 S • 2 SE D KODENSHI CORP "f^ l-fT -S 7 -0 5 - LA S E R D E T E C T O R S a g » K ii« f lt e HPI-2263 iv h y - f t f — 3 > P IN ff2 7 * K T 'T o DIMENSIONS 2 '3 O T * j t B A < l ^ - y y ± C » d l S * l T l '*
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HPI-2263
2856KÂ
HPI-2263lfc*
LT 5242
LT 5242 H
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Untitled
Abstract: No abstract text available
Text: KODENSHI CORP ’ 25E D HPI-23F Sn • T '- Lj-}-i 3 5242L0a G D Q O i n b ■ ftW * DIMENSIONS (Unit: mm) <n'> i; n > p m $ 7 * * ? ■ < * - KT'-fo m k n m x - m m ^ ^ •c to The HPI-23F is a high-speed, high-output silicon PIN photodiode mounted in a clear sideiooking package. The
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HPI-23F
5242L0a
2856KÂ
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Untitled
Abstract: No abstract text available
Text: DETECTORS + PIN PHOTODIODES HPI-2464,2464R5 H PI-2464, 2464R5&. * * N M V * 3CD*- h 7 * - ± XRICD-> ' zi >PI DIMENSIONS (Unit:mm) K T 't o 2 0 ( 7 ) J t H f r '1 ? - y ^ ± C J f M ^ n T l'Jt . HPI-2464, 2464R5 are silicon PIN photodiodes for auto
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HPI-2464
2464R5
PI-2464,
2464R5&
HPI-2464,
2464R5
2856KÂ
000Lux
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DIODE RK 306
Abstract: tr/DIODE RK 306
Text: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.
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SD-503
SD-503B,
SD-503
DIODE RK 306
tr/DIODE RK 306
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