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    2845 TRANSISTOR Search Results

    2845 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2845 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 19-2845; Rev 1; 10/03 USB On-the-Go Charge Pump with Switchable Pullup/Pulldown Resistors The MAX3353E USB On-the-Go OTG regulated charge pump with switchable pullup/pulldown resistors allows peripherals and mobile devices such as PDAs, cellular phones, and digital cameras to


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    PDF MAX3353E MAX3353E

    PA08

    Abstract: max3353 IEC1000-4-2 MAX3353E MAX3353EEBP MAX3353EEBP-T MAX3353EEUE
    Text: 19-2845; Rev 1; 10/03 USB On-the-Go Charge Pump with Switchable Pullup/Pulldown Resistors The MAX3353E USB On-the-Go OTG regulated charge pump with switchable pullup/pulldown resistors allows peripherals and mobile devices such as PDAs, cellular phones, and digital


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    PDF MAX3353E MAX3353E PA08 max3353 IEC1000-4-2 MAX3353EEBP MAX3353EEBP-T MAX3353EEUE

    max3353

    Abstract: IEC1000-4-2 MAX3353E MAX3353EEBP MAX3353EEBP-T MAX3353EEUE 94mW
    Text: 19-2845; Rev 1; 10/03 USB On-the-Go Charge Pump with Switchable Pullup/Pulldown Resistors The MAX3353E USB On-the-Go OTG regulated charge pump with switchable pullup/pulldown resistors allows peripherals and mobile devices such as PDAs, cellular phones, and digital cameras to


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    PDF MAX3353E MAX3353E max3353 IEC1000-4-2 MAX3353EEBP MAX3353EEBP-T MAX3353EEUE 94mW

    max3353

    Abstract: IEC1000-4-2 MAX3353E MAX3353EEBP MAX3353EEBP-T MAX3353EEUE
    Text: 19-2845; Rev 0; 6/03 USB On-the-Go Charge Pump with Switchable Pullup/Pulldown Resistors Features ♦ Ideal for Enabling USB Dual-Role Components for USB OTG Protocol The MAX3353E integrates a regulated charge pump, switchable pullup/pulldown resistors, and an I2C-compatible 2-wire serial interface. The device provides a


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    PDF MAX3353E MAX3353E max3353 IEC1000-4-2 MAX3353EEBP MAX3353EEBP-T MAX3353EEUE

    max3353

    Abstract: A7SP 150pf 6kv MAX3353EEBP-T MAX3353EEUE IEC1000-4-2 MAX3353E MAX3353EEBP
    Text: 19-2845; Rev 1; 10/03 USB On-the-Go Charge Pump with Switchable Pullup/Pulldown Resistors Features ♦ Ideal for Enabling USB Dual-Role Components for USB OTG Protocol The MAX3353E integrates a regulated charge pump, switchable pullup/pulldown resistors, and an I2C-compatible 2-wire serial interface. The device provides a


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    PDF MAX3353E MAX3353E max3353 A7SP 150pf 6kv MAX3353EEBP-T MAX3353EEUE IEC1000-4-2 MAX3353EEBP

    voltage doubler using 555 timer

    Abstract: ac voltage tripler using 555 timer EVA86000 voltage doubler using 555 timer circuit for lc868000 LC868008A LC868012A LC868016A QIC160 PWM USING IC 555 TIMER
    Text: Ordering number : ENN*6723 CMOS IC LC868016/12/08A 8-Bit Single Chip Microcontroller with 16/12/08K-Byte ROM and 640-Byte RAM On Chip Preliminary Overview The LC868016A/12A/08A microcontrollers are 8-bit single chip microcontrollers with the following on-chip functional


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    PDF LC868016/12/08A 16/12/08K-Byte 640-Byte LC868016A/12A/08A 16-bit 13-source LC868016-QIC160 QIC160 voltage doubler using 555 timer ac voltage tripler using 555 timer EVA86000 voltage doubler using 555 timer circuit for lc868000 LC868008A LC868012A LC868016A QIC160 PWM USING IC 555 TIMER

    SS9018

    Abstract: transistor sS9018
    Text: SS9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER TO-92 • High Current Gain Bandwidth Product fT=1,100 MHz Typ Î) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage


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    PDF SS9018 SS9018 transistor sS9018

    transistor s9018

    Abstract: S9018 to-92 S9018 S9018 transistor S9018* transistor S9018 TO92
    Text: S9018 S9018 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


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    PDF S9018 400MHz transistor s9018 S9018 to-92 S9018 S9018 transistor S9018* transistor S9018 TO92

    S9016

    Abstract: s9016 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9016 TRANSISTOR NPN TO-92 1. EMITTER FEATURES Power dissipation PCM: 2. BASE 0.3 W (Tamb=25℃) 3. COLLECTOR Collector current 0.025 A ICM: Collector-base voltage 30


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    PDF S9016 100MHz S9016 s9016 transistor

    transistor f 370

    Abstract: SS9011 2845 transistor
    Text: SS9011 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER,AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR TO-92 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF SS9011 transistor f 370 SS9011 2845 transistor

    transistor S9011

    Abstract: S9011* transistor S9011 Transistor S9011 characteristics s9011 transistor
    Text: S9011 S9011 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.31 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.03 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃


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    PDF S9011 30MHz transistor S9011 S9011* transistor S9011 Transistor S9011 characteristics s9011 transistor

    s9016 transistor

    Abstract: S9016 s9016 transistor datasheet
    Text: S9016 S9016 TRANSISTOR NPN TO-92 1. EMITTER FEATURES Power dissipation PCM: 2. BASE 0.3 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.025 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


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    PDF S9016 100MHz s9016 transistor S9016 s9016 transistor datasheet

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9018 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current 0.05 A ICM: Collector-base voltage 25


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    PDF S9018 400MHz

    S9018

    Abstract: S9018 transistor IB-015 transistor S9018 h-97
    Text: S9018 PNP EPITAXIAL SILICON TRANSISTOR High Frequency Low Noise Amplifier Application TO-92 Collector Current Ic=-50mA Collector Power Dissipation Pc=400mW High Current Gain Bandwidth Product fT=1,100MHz Typ (Ta=25oC) ABSOLUTE MAXIMUM RATINGS Characteristic


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    PDF S9018 -50mA 400mW 100MHz S9018 S9018 transistor IB-015 transistor S9018 h-97

    transistor 9018

    Abstract: 9018 9018 transistor
    Text: NPN SILICON TRANSISTOR 9018 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.31 W Tamb=25 Collector current A ICM : 0.05 Collector-base voltage V V BR CBO : 25 Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25


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    PDF 400MHz transistor 9018 9018 9018 transistor

    Untitled

    Abstract: No abstract text available
    Text: UTC 9018 NPN EPITAXIAL PLANAR TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER FEATURES *High Current Gain Bandwidth Product fT=1.1GHz Typ 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted) PARAMETER


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    PDF 100uA, QW-R201-025

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors SS9018 TO-92 TRANSISTOR NPN 1.EMITTER FEA TURES High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    PDF SS9018 400MHz

    S9018

    Abstract: S9018 TO92
    Text: S9018 NPN TO-92 Bipolar Transistors 1. EMITTER 2. BASE TO-92 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage


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    PDF S9018 400MHz S9018 TO92

    S9018 transistor

    Abstract: S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 2.BASE 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF S9018 400MHz S9018 transistor S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor

    SG3844M

    Abstract: 8 pin ic 3844 for 5 volts 3845 PWM power supply application note SG3845M PWM IC 8 PIN DIP 3844 SG2844 Series SG1844 Application Notes SG3844Y Transistor 596 SJ SG1844
    Text: SG1844I2844I3844 SG1845/2845/3845 GENERAL CURRENT-MODE PWM CONTROLLER L IN E A R IN T E G R A T E D C IR C U IT S D E S C R IP T IO N FEA TU R ES The SG1844/45 family of control IC's provides all the necessary features to implement off-line fixed frequency, current mode switching power supplies with


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    PDF SG1844I2844I3844 SG1845/2845/3845 SG1844/45 14-PIN SG2844D SG3844D SG2845D SG3845D SG3844M 8 pin ic 3844 for 5 volts 3845 PWM power supply application note SG3845M PWM IC 8 PIN DIP 3844 SG2844 Series SG1844 Application Notes SG3844Y Transistor 596 SJ SG1844

    Untitled

    Abstract: No abstract text available
    Text: S9018 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT =l 100MHz * High Total Power D issipation: Pc=400mW


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    PDF S9018 100MHz 400mW

    S9018

    Abstract: S9018 TO92
    Text: FORWARD INTERNATIONAL ELECTRONICS LID . S9018 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=l 100MHz * High Total Power Dissipation: Pc=400mW


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    PDF S9018 100MHz 400mW BVcboTO-92 100uA S9018 S9018 TO92

    Untitled

    Abstract: No abstract text available
    Text: SS90tt NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN MmA . COLLECTOR CURRENT STATIC CHARACTERISTIC Vce V>. COLLECTOR-EMITTER VOLTAGE Mm A), COLLECTOR CURRENT CURRENT GAIN-BANDWIDTH PRODUCT lc(mA), COLLECTOR CURRENT lc(mA), COLLECTOR CURRENT V i t a t i , Vc^sat). (mV) SATURATION


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    PDF SS90tt SS9011 100/A.

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTCENAHONAl ELECTRONICS LTD, S9016 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE * High Total power dissipation. Pt=400mW ABSOLUTE MAXIMUM RATINGS a t Tamb=2$°C C haracteristic Symbol R ating


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    PDF S9016 400mW) 100uA 10VIeM) 100MHz 50ohm