TPS6116x
Abstract: HPA283 MBR0540T1 SLUA271 TPS61160 TPS61161 TPS61165 W5SM-JXJZ
Text: User's Guide SLVU224C – January 2008 – Revised February 2010 TPS61165EVM-283 This user's guide describes the characteristics, operation, and use of the TPS61165EVM-283 evaluation module EVM . This EVM contains the Texas Instruments TPS61165 boost converter, configured with
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SLVU224C
TPS61165EVM-283
TPS61165EVM-283
TPS61165
TPS6116x
HPA283
MBR0540T1
SLUA271
TPS61160
TPS61161
W5SM-JXJZ
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OMRON RELAY Cross Reference
Abstract: DC solid state relay relay cross reference Omron G3MC-201PL Solid State Relay phototriac catalogue OMRON RELAY G2R Cross Reference ac ssr G3MC-201PL G3MC-201P P6BF-4BND
Text: Omron A5 Catalogue 2007 283-418 11/9/06 10:55 am Page 283 Technical Information – Solid State Relays Glossary Terms Circuit functions Input Output Characteristics Meaning Photocoupler Photoctriac coupler Transfers the input signal and insulates inputs and outputs as well.
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K060-E2-05
K913-E2-01
OMRON RELAY Cross Reference
DC solid state relay
relay cross reference
Omron G3MC-201PL Solid State Relay
phototriac catalogue
OMRON RELAY G2R Cross Reference
ac ssr
G3MC-201PL
G3MC-201P
P6BF-4BND
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A3gq
Abstract: AGQ20003 AGQ20006 AGQ20009 AGQ20012 AGQ2001H AGQ20024 AGQ2004H AGQ200
Text: GQ AGQ TESTING ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY GQ RELAYS (AGQ) FEATURES 7.20–0.3 .283–.012 10.60–0.3 .417–.012 5.20–0.2 .205–.008 7.20–0.3 .283–.012 10.60–0.3 .417–.012 Max.5.40 .213 mm inch • Compact flat body saves space
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003dia.
00dia.
079dia.
100805J
A3gq
AGQ20003
AGQ20006
AGQ20009
AGQ20012
AGQ2001H
AGQ20024
AGQ2004H
AGQ200
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HPA283
Abstract: MBR0540T1 PTC36SAAN SLUA271 TPS61160 TPS61161 TPS61165 TPS6116x JP2S USB-TO-GPIO
Text: User's Guide SLVU224 – January 2008 TPS61165EVM-283 This user's guide describes the characteristics, operation, and use of the TPS61165EVM-283 evaluation module EVM . This EVM contains the Texas Instruments TPS61165 boost converter, configured with external components to regulate current through a string of WLEDs. This user's guide includes EVM
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SLVU224
TPS61165EVM-283
TPS61165EVM-283
TPS61165
HPA283
MBR0540T1
PTC36SAAN
SLUA271
TPS61160
TPS61161
TPS6116x
JP2S
USB-TO-GPIO
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GQ-RELAYS
Abstract: AGQ20006 AGQ20009 AGQ20012 AGQ2001H AGQ20024 AGQ2004H AGQ2101H AGQ20003
Text: GQ AGQ TESTING ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY GQ RELAYS (AGQ) FEATURES 7.20±0.3 .283±.012 10.60±0.3 .417±.012 5.20±0.2 .205±.008 10.60±0.3 .417±.012 7.20±0.3 .283±.012 Max.5.40 .213 mm inch • Compact flat body saves space With a small footprint of 10.6 mm (L) x
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003dia.
00dia.
079dia.
GQ-RELAYS
AGQ20006
AGQ20009
AGQ20012
AGQ2001H
AGQ20024
AGQ2004H
AGQ2101H
AGQ20003
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Matsushita polarized relay 7 pin
Abstract: AGQ20003 AGQ20006 AGQ20009 AGQ20012 AGQ2001H AGQ20024 AGQ2004H AGQ2101H 2830-12
Text: GQ TESTING ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY GQ-RELAYS FEATURES 7.20±0.3 .283±.012 10.60±0.3 .417±.012 5.20±0.2 .205±.008 10.60±0.3 .417±.012 7.20±0.3 .283±.012 Max.5.40 .213 mm inch • Compact flat body saves space With a small footprint of 10.6 mm L x 7.2
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Untitled
Abstract: No abstract text available
Text: GQ AGQ TESTING ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY GQ RELAYS (AGQ) FEATURES 7.20±0.3 .283±.012 10.60±0.3 .417±.012 5.20±0.2 .205±.008 10.60±0.3 .417±.012 7.20±0.3 .283±.012 Max.5.40 .213 mm inch • Compact flat body saves space With a small footprint of 10.6 mm (L) x
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00dia.
079dia.
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AGQ2001H
Abstract: AGQ20024 AGQ2004H AGQ2101H AGQ20003 AGQ20006 AGQ20009 AGQ20012 AGQ200r03 DSA00124.txt
Text: GQ TESTING ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY GQ-RELAYS FEATURES 7.20±0.3 .283±.012 10.60±0.3 .417±.012 5.20±0.2 .205±.008 10.60±0.3 .417±.012 7.20±0.3 .283±.012 Max.5.40 .213 mm inch • Compact flat body saves space With a small footprint of 10.6 mm L x 7.2
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Matsushita polarized relay
Abstract: AGQ20003 AGQ20006 AGQ20009 AGQ20012 AGQ2001H AGQ20024 AGQ2004H AGQ2101H matsushita power relay
Text: GQ AGQ TESTING ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY GQ RELAYS (AGQ) FEATURES 7.20±0.3 .283±.012 10.60±0.3 .417±.012 5.20±0.2 .205±.008 10.60±0.3 .417±.012 7.20±0.3 .283±.012 Max.5.40 .213 mm inch • Compact flat body saves space With a small footprint of 10.6 mm (L) x 7.2
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003dia.
00dia.
079dia.
Matsushita polarized relay
AGQ20003
AGQ20006
AGQ20009
AGQ20012
AGQ2001H
AGQ20024
AGQ2004H
AGQ2101H
matsushita power relay
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Untitled
Abstract: No abstract text available
Text: BAS281 / 282 / 283 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 9612009
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BAS281
OD-80)
BAS282
BAS283
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BZW30-283 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage350 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage283 I(PPM) Max.(A)Pk.Pulse Current6.0
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BZW30-283
Voltage350
Voltage283
Voltage500
StyleAxial-10
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BAS282
Abstract: BAS282-GS08 BAS283 BAS281 BAS281-GS08 schottky DO-213
Text: BAS281 / 282 / 283 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 9612009
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BAS281
OD-80)
D-74025
03-Mar-04
BAS282
BAS282-GS08
BAS283
BAS281-GS08
schottky DO-213
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Untitled
Abstract: No abstract text available
Text: BZW04-283 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage360 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage283 I(PPM) Max.(A)Pk.Pulse Current900m
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BZW04-283
Voltage360
Voltage283
Current900m
Voltage504
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85500 transistor
Abstract: BAS281 BAS281-GS08 BAS282 BAS283 general semiconductor DIODE SOD80
Text: BAS281 / 282 / 283 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component
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BAS281
2002/95/EC
2002/96/EC
18-Jul-08
85500 transistor
BAS281-GS08
BAS282
BAS283
general semiconductor DIODE SOD80
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BAS281
Abstract: BAS281-GS18 85500 transistor BAS281-GS08 BAS282 BAS283
Text: BAS281 / 282 / 283 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component
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BAS281
2002/95/EC
2002/96/EC
08-Apr-05
BAS281-GS18
85500 transistor
BAS281-GS08
BAS282
BAS283
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RX-LS200
Abstract: No abstract text available
Text: 383 Adjustable Range Reflective Photoelectric Sensor RX-LS200 FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier Built-in ■■Sensor selection guide.P.283~
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RX-LS200
EX-10
EX-20
EX-30
EX-40
CX-440
EQ-30
EQ-500
CX-400
C3604)
RX-LS200
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Untitled
Abstract: No abstract text available
Text: 403 U-shaped Photoelectric Sensor RT-610 SERIES FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier Built-in ■■Sensor selection guide. P.283~
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RT-610
RT-610-10/10R/50
CX-400
EX-10
EX-20
EX-30
EX-40
CX-440
EQ-30
EQ-500
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Untitled
Abstract: No abstract text available
Text: 361 Adjustable Range Reflective Photoelectric Sensor EQ-30 SERIES FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier Built-in ■■Sensor selection guide. P.283~
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EQ-30
CX-400
EX-10
EX-20
EX-40
EX-30
CX-440
EQ-30
EQ-500
RX-LS200
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Untitled
Abstract: No abstract text available
Text: 347 Threaded Miniature Photoelectric Sensor EX-30 SERIES Ver.2 FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier Built-in ■■Sensor selection guide. P.283~
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EX-30
EX-33
EX-31â
RX-LS200
RT-610
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BA282
Abstract: marking SA FHA07001 BA diode BA 282 diode ba 147
Text: SIEMENS BA 282 BA 283 Silicon RF Switching Diodes • For low-loss VHF band switching in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 282 yellow Q62702-A428 DO-35 DHD Q62702-A429 BA 283 ¿ - K] o FHA07001 Maximum Ratings
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Q62702-A428
FHA07001
DO-35
Q62702-A429
6E35bOS
E3Sb05
BA282
marking SA
BA diode
BA 282
diode ba 147
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cm 8600 c
Abstract: No abstract text available
Text: 40E D EB □ □ □ 0 cn 4 1 I-3SENI FASCO INDS/ SENISYS CLD71 CLD72 CLD71BB Silicon Planar CLD72BB Photovoltiac Diodes "["-•-ll-'ol Product Data — H .283 0IA . l-«- — .283 DIA. GENERAL DESCRIPTION — The CLD Series of Photo diodes is specifically designed to optimize Photovoltaic
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CLD71
CLD72
CLD71BB
CLD72BB
CLD71
CLD72
CLD71V
CLD72V.
cm 8600 c
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 283 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2v/C25V = H-5 TYP. Low Series Resistance : rs = 0.55H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2v/C25V
0014g
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Untitled
Abstract: No abstract text available
Text: 1SV283 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV 283 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2V/C25V = 11.5 TYP. Low Series Resistance : rs = 0.550 (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2V/C25V
0014g
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27c diode toshiba
Abstract: 1SV283 847E C25V 6685E
Text: 1SV283 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 283 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2y/C25V
0014g
27c diode toshiba
1SV283
847E
C25V
6685E
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