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    2811* INTEL Search Results

    2811* INTEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EN80C188XL-12 Rochester Electronics LLC 80C188XL - MPU Intel 186 CISC 16-Bit Visit Rochester Electronics LLC Buy
    EN80C188XL-20 Rochester Electronics LLC 80C188XL - MPU Intel 186 CISC 16-Bit Visit Rochester Electronics LLC Buy
    MD82C288-10/R Rochester Electronics LLC Replacement for Intel part number MD82C288-10. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    MD87C51/BQA Rochester Electronics LLC Replacement for Intel part number 5962-8768401QA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    MG87C196KC/B Rochester Electronics LLC Replacement for Intel part number MG87C196KC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    2811* INTEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC4452

    Abstract: EN2811
    Text: Ordering number:EN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.


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    EN2811 2SC4452 2SC4452applied 2059B 2SC4452] 2SC4452 EN2811 PDF

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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.47 µH ±35% Rated current ∆T = 40 K IR 2.5 A typ. Saturation current |ΔL/L| < 35% 2.0 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 6.8 µH ±30% Rated current ∆T = 40 K IR 0.75 A typ. Saturation current |ΔL/L| < 35% 0.55 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 2.2 µH ±30% Rated current ∆T = 40 K IR 1.3 A typ. Saturation current |ΔL/L| < 35% 1.0 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 1.0 µH ±30% Rated current ∆T = 40 K IR 1.75 A typ. Saturation current |ΔL/L| < 35% 1.5 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.33 µH ±35% Rated current ∆T = 40 K IR 2.8 A typ. Saturation current |ΔL/L| < 35% 2.4 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 6.8 µH ±30% Rated current ∆T = 40 K IR 0.75 A typ. Saturation current |ΔL/L| < 35% 0.55 A typ. DC Resistance


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    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 3.3 µH ±30% Rated current ∆T = 40 K IR 1.0 A typ. Saturation current |ΔL/L| < 35% 0.85 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 2.2 µH ±30% Rated current ∆T = 40 K IR 1.3 A typ. Saturation current |ΔL/L| < 35% 1.0 A typ. DC Resistance


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    744028000056

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.056 µH ±35% Rated current ∆T = 40 K IR 4.5 A typ. Saturation current |ΔL/L| < 35% 6.0 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.15 µH ±35% Rated current ∆T = 40 K IR 3.0 A typ. Saturation current |ΔL/L| < 35% 3.6 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.47 µH ±35% Rated current ∆T = 40 K IR 2.5 A typ. Saturation current |ΔL/L| < 35% 2.0 A typ. DC Resistance


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    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 1.0 µH ±30% Rated current ∆T = 40 K IR 1.75 A typ. Saturation current |ΔL/L| < 35% 1.5 A typ. DC Resistance


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    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 3.3 µH ±30% Rated current ∆T = 40 K IR 1.0 A typ. Saturation current |ΔL/L| < 35% 0.85 A typ. DC Resistance


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    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.15 µH ±35% Rated current ∆T = 40 K IR 3.0 A typ. Saturation current |ΔL/L| < 35% 3.6 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.82 µH ±35% Rated current ∆T = 40 K IR 2.0 A typ. Saturation current |ΔL/L| < 35% 1.6 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 4.7 µH ±30% Rated current ∆T = 40 K IR 0.85 A typ. Saturation current |ΔL/L| < 35% 0.70 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 22 µH ±30% Rated current ∆T = 40 K IR 0.35 A typ. Saturation current |ΔL/L| < 35% 0.27 A typ. DC Resistance


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    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.82 µH ±35% Rated current ∆T = 40 K IR 2.0 A typ. Saturation current |ΔL/L| < 35% 1.6 A typ. DC Resistance


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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 15 µH ±30% Rated current ∆T = 40 K IR 0.45 A typ. Saturation current |ΔL/L| < 35% 0.35 A typ. DC Resistance


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    2SC4452

    Abstract: ITR06977 ITR06978 ITR06979
    Text: Ordering number:ENN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • High-speed switching. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.


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    ENN2811 2SC4452 2059B 2SC4452] 2SC4452 ITR06977 ITR06978 ITR06979 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 4.7 µH ±30% Rated current ∆T = 40 K IR 0.85 A typ. Saturation current |ΔL/L| < 35% 0.70 A typ. DC Resistance


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    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.056 µH ±35% Rated current ∆T = 40 K IR 4.5 A typ. Saturation current |ΔL/L| < 35% 6.0 A typ. DC Resistance


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    2SC4452-2

    Abstract: 10PA 2SC44 2SC4452 T500
    Text: Ordering number: EN 2811 2SC4452 No.2811 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed • Low collector saturation voltage •High gain-bandwidth product ■Small collector capacity • Very small-sized package permitting the 2SC4452-applied sets to be made small and slim


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    2SC44 2SC4452-applied 2SC4452-2 10PA 2SC4452 T500 PDF