2SC4452
Abstract: EN2811
Text: Ordering number:EN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.
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EN2811
2SC4452
2SC4452applied
2059B
2SC4452]
2SC4452
EN2811
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.47 µH ±35% Rated current ∆T = 40 K IR 2.5 A typ. Saturation current |ΔL/L| < 35% 2.0 A typ. DC Resistance
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 6.8 µH ±30% Rated current ∆T = 40 K IR 0.75 A typ. Saturation current |ΔL/L| < 35% 0.55 A typ. DC Resistance
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 2.2 µH ±30% Rated current ∆T = 40 K IR 1.3 A typ. Saturation current |ΔL/L| < 35% 1.0 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 1.0 µH ±30% Rated current ∆T = 40 K IR 1.75 A typ. Saturation current |ΔL/L| < 35% 1.5 A typ. DC Resistance
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.33 µH ±35% Rated current ∆T = 40 K IR 2.8 A typ. Saturation current |ΔL/L| < 35% 2.4 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 6.8 µH ±30% Rated current ∆T = 40 K IR 0.75 A typ. Saturation current |ΔL/L| < 35% 0.55 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 3.3 µH ±30% Rated current ∆T = 40 K IR 1.0 A typ. Saturation current |ΔL/L| < 35% 0.85 A typ. DC Resistance
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 2.2 µH ±30% Rated current ∆T = 40 K IR 1.3 A typ. Saturation current |ΔL/L| < 35% 1.0 A typ. DC Resistance
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744028000056
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.056 µH ±35% Rated current ∆T = 40 K IR 4.5 A typ. Saturation current |ΔL/L| < 35% 6.0 A typ. DC Resistance
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.15 µH ±35% Rated current ∆T = 40 K IR 3.0 A typ. Saturation current |ΔL/L| < 35% 3.6 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.47 µH ±35% Rated current ∆T = 40 K IR 2.5 A typ. Saturation current |ΔL/L| < 35% 2.0 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 1.0 µH ±30% Rated current ∆T = 40 K IR 1.75 A typ. Saturation current |ΔL/L| < 35% 1.5 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 3.3 µH ±30% Rated current ∆T = 40 K IR 1.0 A typ. Saturation current |ΔL/L| < 35% 0.85 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.15 µH ±35% Rated current ∆T = 40 K IR 3.0 A typ. Saturation current |ΔL/L| < 35% 3.6 A typ. DC Resistance
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.82 µH ±35% Rated current ∆T = 40 K IR 2.0 A typ. Saturation current |ΔL/L| < 35% 1.6 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 4.7 µH ±30% Rated current ∆T = 40 K IR 0.85 A typ. Saturation current |ΔL/L| < 35% 0.70 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 22 µH ±30% Rated current ∆T = 40 K IR 0.35 A typ. Saturation current |ΔL/L| < 35% 0.27 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.82 µH ±35% Rated current ∆T = 40 K IR 2.0 A typ. Saturation current |ΔL/L| < 35% 1.6 A typ. DC Resistance
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 15 µH ±30% Rated current ∆T = 40 K IR 0.45 A typ. Saturation current |ΔL/L| < 35% 0.35 A typ. DC Resistance
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2SC4452
Abstract: ITR06977 ITR06978 ITR06979
Text: Ordering number:ENN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • High-speed switching. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.
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ENN2811
2SC4452
2059B
2SC4452]
2SC4452
ITR06977
ITR06978
ITR06979
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 4.7 µH ±30% Rated current ∆T = 40 K IR 0.85 A typ. Saturation current |ΔL/L| < 35% 0.70 A typ. DC Resistance
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 0.056 µH ±35% Rated current ∆T = 40 K IR 4.5 A typ. Saturation current |ΔL/L| < 35% 6.0 A typ. DC Resistance
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2SC4452-2
Abstract: 10PA 2SC44 2SC4452 T500
Text: Ordering number: EN 2811 2SC4452 No.2811 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed • Low collector saturation voltage •High gain-bandwidth product ■Small collector capacity • Very small-sized package permitting the 2SC4452-applied sets to be made small and slim
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2SC44
2SC4452-applied
2SC4452-2
10PA
2SC4452
T500
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