transistor SMD w26
Abstract: t2d 04 panasonic 74HC595 SMD AA7 smd diode smd diode u1j DIODE SMD b14 smd transistor ab2 SMD H24 smd diode af3 smd w20
Text: BGA Demo Board with FPGAs for SMII-to-MII Conversion Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document LXD9782 — BGA Demo Board with FPGAs for SMII-to-MII Conversion. Order Number: 249051-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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LXD9782
144QFP
EPF10K10ATC144-1
U14-29
20SOP
SN74LVTH244ADWR
EPF10K30ABC356-1
MPC949FA
SG-8200-DC-25
00M-PC
transistor SMD w26
t2d 04 panasonic
74HC595 SMD
AA7 smd diode
smd diode u1j
DIODE SMD b14
smd transistor ab2
SMD H24
smd diode af3
smd w20
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-SM-G10-L14-X
Abstract: No abstract text available
Text: SO C I ATI O IN DU ST RY AU T RoHS Compliant ISO 9001 Certified NT ME RN VE GO AS INTERCONNECTION SPECIALISTS G IN ANDON TED IMA MA G O N EDUCATION .050 [1.27] Pitch Image Sensor BGA Sockets Top View Shown Units: in [mm] 1.150 [29.21] .050 [1.27] Typ. .650 [16.51]
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10-14-11-097-400T4-R27-L14
10-14-11-097-414T4-R27-L14
10-24-05-168-347T-R27-L14
10-24-05-168-319T-R27-L14
585-07-02-034-211M-R29-L14
585-07-02-034-265M-R29-L14
IS-09B
-SM-G10-L14-X
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SF-BGA280A-B-11
Abstract: No abstract text available
Text: D Package Code: BGA280A C 22.86mm [0.900"] 0.71mm [0.028"] See BGA pattern code to the right for actual pattern layout Y 0.58mm [0.023"] X 22.86mm [0.900"] Top View reference only 1.27mm [0.050"] 2 0.36mm [0.014"] dia. 0.71mm [0.028"] 5.33mm 3.74mm [0.147"]
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BGA280A
FR4/G10
SF-BGA280A-B-11
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Untitled
Abstract: No abstract text available
Text: 4 1 +9 BGA7351 50 MHz to 500 MHz high linearity Si variable gain amplifier; 28 dB gain range Rev. 3 — 11 June 2014 Product data sheet 1. Product profile 1.1 General description The BGA7351 MMIC is a dual independently digitally controlled IF Variable Gain
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BGA7351
BGA7351
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CTS-219-02
Abstract: MKS18546-0-404 SMA 142-0701-851
Text: BGA7351 50 MHz to 500 MHz high linearity Si variable gain amplifier; 28 dB gain range Rev. 2 — 19 December 2012 Product data sheet 1. Product profile 1.1 General description The BGA7351 MMIC is a dual independently digitally controlled IF Variable Gain Amplifier VGA operating from 50 MHz to 500 MHz. Each IF VGA amplifies with a gain
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BGA7351
BGA7351
CTS-219-02
MKS18546-0-404
SMA 142-0701-851
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Untitled
Abstract: No abstract text available
Text: BGA7351 50 MHz to 250 MHz high linearity Si variable gain amplifier; 28 dB gain range Rev. 1 — 28 December 2011 Product data sheet 1. Product profile 1.1 General description The BGA7351 MMIC is a dual independently digitally controlled IF Variable Gain Amplifier VGA operating from 50 MHz to 250 MHz. Each IF VGA amplifies with a gain
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BGA7351
BGA7351
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PDF
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Untitled
Abstract: No abstract text available
Text: BGA7351 50 MHz to 250 MHz high linearity Si variable gain amplifier; 28 dB gain range Rev. 1 — 28 December 2011 Product data sheet 1. Product profile 1.1 General description The BGA7351 MMIC is a dual independently digitally controlled IF Variable Gain Amplifier VGA operating from 50 MHz to 250 MHz. Each IF VGA amplifies with a gain
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BGA7351
BGA7351
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amkor CABGA 56
Abstract: chiparray amkor CABGA 8X8 CTBGA CABGA 17 x 17 thermal resistance CABGA CVBGA MO-195 8x8 64 footprint amkor cabga
Text: LAMINATE data sheet CABGA/CTBGA/CVBGA Features: ChipArray Packages: Amkor’s ChipArray® packages are laminatebased Ball Grid Array BGA packages that are compatible with established SMT mounting processes. The near-chip-size standard outlines offer a broad selection of ball array pitch, count,
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0603 npo
Abstract: capacitor 0603-NPO m9811 0805CS 1008CS BGA2022 MLG1608
Text: H APPLICATION NOTE BGA2022, RX mixer 880, 1950 and 2450 MHz Abstract This report describes three demo boards on which the BGA2022 has been applied as a down-mixer: 880 to 80 MHz 1950 to 80 MHz 2450 to 280 MHz Conversion Gain 5 dB 5 dB 6 dB OIP3 4 dBm 7 dBm
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BGA2022,
BGA2022
RNR-45-99-B-0222
HP8970A
0603 npo
capacitor 0603-NPO
m9811
0805CS
1008CS
MLG1608
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL33B2863A-K0/K9/F8/E7S REV: 1.0 General Information 1GB 128Mx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B2863A is a 128Mx72 DDR3 SDRAM high density RDIMM. This memory module is single rank, consists of nine CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL
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VL33B2863A-K0/K9/F8/E7S
128Mx72
240-PIN
VL33B2863A
128Mx8
28-bit
240-pin
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 NXP Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION – Cellular band 900 MHz
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MBD128
BGA2022
R77/06/pp9
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DDR3 DIMM 240 pinout
Abstract: DDR3 RDIMM SPD JEDEC 240-PIN DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 DDR3 DIMM pinout
Text: Product Specifications PART NO.: VL33B2863A-K0/K9/F8/E7S REV: 1.0 General Information 1GB 128Mx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B2863A is a 128Mx72 DDR3 SDRAM high density RDIMM. This memory module is single rank, consists of nine CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL
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VL33B2863A-K0/K9/F8/E7S
128Mx72
240-PIN
VL33B2863A
128Mx8
28-bit
240-pin
DDR3 DIMM 240 pinout
DDR3 RDIMM SPD JEDEC
DDR3-1066
DDR3-1333
PC3-10600
PC3-12800
DDR3 DIMM pinout
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BGA2022
Abstract: AN00059
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 NXP Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION
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MBD128
BGA2022
R77/06/pp9
BGA2022
AN00059
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HP8970A
Abstract: m9811 0603 npo AN00059 Philips X7R capacitors BGA2022 MLG1608 capacitor 0603-NPO
Text: Philips Semiconductors BGA2022, RX mixer 880, 1950 and 2450 MHz Application Note AN00059 APPLICATION NOTE BGA2022, RX mixer 880, 1950 and 2450 MHz AN00059 Author s : Hans ten Cate Philips Semiconductors DSCN-CS-Development, The Netherlands Keywords BGA022
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BGA2022,
AN00059
BGA022
RNR-DV-00-O-0376
BGA2022
HP8970A
BGA2022\Rd0o0376
m9811
0603 npo
AN00059
Philips X7R capacitors
MLG1608
capacitor 0603-NPO
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.1 VL470T2864A-E6S/D5S/CCS General Information 1GB 128Mx 64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description: The VL470T2864A is a 128M x 64 DDR2 SDRAM high density SODIMM. This memory module consists of eight CMOS 64Mx16 bits with 8 banks DDR2 Synchronous DRAMs in BGA packages and a 2K
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VL470T2864A-E6S/D5S/CCS
128Mx
200-PIN
VL470T2864A
64Mx16
200-pin
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MARKING 5F SOT363
Abstract: BGA2022 AN00059
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION
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MBD128
BGA2022
613516/06/pp8
MARKING 5F SOT363
BGA2022
AN00059
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BGA 256 PACKAGE power dissipation
Abstract: BGA 64 PACKAGE thermal resistance xilinx CS144 thermal resistance FG676 BG560 BGA and CSP BGA-1156 fine BGA thermal profile cte table flip chip substrate BG432
Text: Tech Topics Xilinx Fine-Pitch BGA and CSP Packages: The Technological Edge Introduction Rapid evolution of complex electronic systems and the demand for improved functionality at lower cost have resulted in the need for silicon products with smaller footprints. Advanced
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00-mm
27-mm
XC9500
BGA 256 PACKAGE power dissipation
BGA 64 PACKAGE thermal resistance
xilinx CS144 thermal resistance
FG676
BG560
BGA and CSP
BGA-1156
fine BGA thermal profile
cte table flip chip substrate
BG432
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE NOR FLASH 256Mx16-BGA Flash Memory MODULE 3DFO4G16VB2408 4Gbit Nor Flash organized as 258Mx16, based on 128Mx16 Pin Assignment Top View BGA 64 Features - Single supply for read/program/erase (2.7V to 3.6V) - VIO = VCC = 2.7 to 3.6V - x16 data bus
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256Mx16-BGA
3DFO4G16VB2408
258Mx16,
128Mx16
16-word/32-byte
512-byte
128-Kbytes
1024-byte
MMXX00000000XXX
3DFP-0408-REV
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marking code E1 SMD 5pin
Abstract: SMD 5pin code E2 M3D452 BGA2031 2114 SMD marking code g1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D452 BGA2031 MMIC variable gain amplifier Preliminary specification Supersedes data of 1999 Feb 26 1999 Jul 23 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 FEATURES PINNING • High gain
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M3D452
BGA2031
125006/03/pp12
marking code E1 SMD 5pin
SMD 5pin code E2
M3D452
BGA2031
2114 SMD
marking code g1
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sot617-1
Abstract: CTS-219-05
Text: BGA7350 50 MHz to 250 MHz high linearity Si variable gain amplifier; 24 dB gain range Rev. 1 — 21 December 2011 Product data sheet 1. Product profile 1.1 General description The BGA7350 MMIC is a dual independently digitally controlled IF Variable Gain Amplifier VGA operating from 50 MHz to 250 MHz. Each IF VGA amplifies with a gain
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BGA7350
BGA7350
sot617-1
CTS-219-05
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Untitled
Abstract: No abstract text available
Text: BGA7350 50 MHz to 250 MHz high linearity Si variable gain amplifier; 24 dB gain range Rev. 1 — 21 December 2011 Product data sheet 1. Product profile 1.1 General description The BGA7350 MMIC is a dual independently digitally controlled IF Variable Gain Amplifier VGA operating from 50 MHz to 250 MHz. Each IF VGA amplifies with a gain
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BGA7350
BGA7350
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL470T2863E-E6S REV: 1.0 General Information 1GB 128Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470T2863E is a 128Mx64 DDR2 SDRAM high density SODIMM. This memory module consists of eight CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin
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VL470T2863E-E6S
128Mx64
200-PIN
VL470T2863E
128Mx8
200-pin
200-pin,
in-li00
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VL470T2863E-E6S
Abstract: 200 pin SODIMM ddr2 connector samsung pc2-5300 DDR2 SODIMM SPD JEDEC SPEC DDR2-667 PC2-5300 VN181
Text: Product Specifications PART NO.: VL470T2863E-E6S REV: 1.0 General Information 1GB 128Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470T2863E is a 128Mx64 DDR2 SDRAM high density SODIMM. This memory module consists of eight CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin
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VL470T2863E-E6S
128Mx64
200-PIN
VL470T2863E
128Mx8
200-pin
200-pin,
VN-181109
VL470T2863E-E6S
200 pin SODIMM ddr2 connector
samsung pc2-5300
DDR2 SODIMM SPD JEDEC SPEC
DDR2-667
PC2-5300
VN181
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PC3-10600
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.0 VL43B5663A-K9S/F8S/E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B5663A is a 256Mx72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL43B5663A-K9S/F8S/E7S
256MX72
VL43B5663A
128Mx8
28-bit
204-pin
A10/AP
PC3-10600
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