Untitled
Abstract: No abstract text available
Text: £ ÿ j SGS'THOMSON Q tiM S iM tê M M 27V512 LOW VOLTAGE 512K 64K x 8 OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns - LOW POWER "CMOS” CONSUMPTION: - Active Current 10mA - Standby Current 10|xA ■ PROGRAMMING VOLTAGE: 12.75V
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27V512
200ns
M27V512
M27C512
PLCC32
TSOP28
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Untitled
Abstract: No abstract text available
Text: /T T SGS'THOMSON ^ 7 # G fflD IIM ilLIO T M O IS i M 2 7V 5 12 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA
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M27V512
M27C512
TSOP28
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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FAH10
Abstract: gvrp jl m27c512 1N914 M27C512 M27V512 PLCC32 VA10
Text: r Z J S G S -T H O M S O N ^ 7 w . lMD § @liIUI®in3 R0]©l 27V512 LOW VOLTAGE 512K (64K x 8 OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 10mA - Standby Current 10|xA
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M27V512
200ns
M27V512
M27C512
7T2T237
TSOP28
TSOP28
FAH10
gvrp
jl m27c512
1N914
PLCC32
VA10
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M27G512
Abstract: No abstract text available
Text: 5 F. _ 27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: - Active Current 10m A at5M H z - Standby Current 10^A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
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M27V512
100ns
M27V512
M27G512
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Untitled
Abstract: No abstract text available
Text: r=J SGS-THOMSON 27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|uA ■ PROGRAMMING VOLTAGE: 12.75V
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M27V512
M27C512
M27W512
M27V512
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Untitled
Abstract: No abstract text available
Text: 27V512 512 Kbit 64Kb X 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: - Active Current 10mAat5MHz - Standby Current 10|j,A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|^s/byte (typical)
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M27V512
100ns
10mAat5MHz
M27V512
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Untitled
Abstract: No abstract text available
Text: / = T *7 # « S G S -ÎH O M S O N ,QJ 1Mq * S & 27V512 LOW VOLTAGE CMOS 512K 64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - V c c Range: 3V to 5.5V (Ta = 0 to 70°C) - V c c Range: 3.2V to 5.5V (T a = -4 0 to 85°C) ■ ACCESS TIME: 120, 150 and 200ns
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M27V512
200ns
M27V512
M27C512
PLCC32
TSOP28
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Untitled
Abstract: No abstract text available
Text: F Z J #« S G S - T H O M S O N 27V512 M g^(Q i[Li(iM (Q )[*§ LOW VOLTAGE CMOS 512K (64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = -4 0 to 85°C) ■ ACCESS TIME: 200 and 250ns
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M27V512
250ns
PLCC32
PTS028,
M27V512
M27C512
M27V512,
M27C512
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EPROM M27C512
Abstract: No abstract text available
Text: rZ T SCS-1H0 MS0 N *7 # 27V512 RfflDM§ iILlim®ROD i LOW VOLTAGE CMOS 512K 64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (TA = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = - 4 0 to 85°C) ■ ACCESS TIME: 200 and 250ns * LOW POWER "CMOS" CONSUMPTION:
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M27V512
250ns
PLCC32
PTS028,
M27V512
M27C512
EPROM M27C512
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