27mhz rf amplifier
Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
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NTE236
27MHz,
NTE236
27MHz)
27MHz
27mhz rf amplifier
27mhz rf ic
27mhz
HF SSB APPLICATIONS
27mhz rf amplifier NPN transistor
HF power amplifier
12v class d amplifier 20W
27mhz transistor
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706H
Abstract: PC10 HT82K74E
Text: HT82K74E/HT82K74EE 27MHz Keyboard/ Mouse TX 8-Bit MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features · Operating voltage: · 128´8 bits data EEPROM for HT82K74EE fSYS= 27MHz: 3.0V~3.3V for crystal mode
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HT82K74E/HT82K74EE
27MHz
HA0075E
HT82K74EE
27MHz:
27MHz)
16-bit
706H
PC10
HT82K74E
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27mhz rf ic
Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
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NTE236
27MHz,
NTE236
27MHz)
27MHz
27mhz rf ic
27mhz rf amplifier NPN transistor
27mhz rf amplifier
12v class d amplifier 20W
27mhz transistor
27MHz power amplifier
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NTE237
Abstract: No abstract text available
Text: NTE237 Silicon NPN Transistor RF Power Output PO = 3.5W, 27MHz Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
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NTE237
27MHz)
500mA
500mA,
100mA
-200mA
50MHz,
NTE237
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2SC4272
Abstract: ITR06606 ITR06607 ITR06608 ITR06611
Text: 2SC4272 Ordering number : EN2970A SANYO Semiconductors DATA SHEET 2SC4272 NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications Features • Small size making it easy to provide high-density, small-sized hybrid ICs. Specifications
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2SC4272
EN2970A
27MHz
2SC4272
ITR06606
ITR06607
ITR06608
ITR06611
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2SC4272
Abstract: EN2970
Text: Ordering number:EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 2.5 1.0
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EN2970
2SC4272
27MHz
2SC4272]
25max
2SC4272
EN2970
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2sc2166
Abstract: No abstract text available
Text: Product Specification 2SC2166 Silicon NPN Power Transistor DESCRIPTION ・High Power Gain: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ・High Reliability APPLICATIONS ・Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.
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2SC2166
27MHz,
CH2SC2166
27MHz
2sc2166
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2SC1969
Abstract: 2sc1969 transistor transistor 2sC1969 HF power amplifier f-27MHz 27mhz transistor 2sc196 12v power amplifiers 27mhz
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION •High Power Gain: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.
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2SC1969
Gpe12dB
27MHz,
27MHz
2SC1969
2sc1969 transistor
transistor 2sC1969
HF power amplifier
f-27MHz
27mhz transistor
2sc196
12v power amplifiers
27mhz
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27MHz rf transmitter
Abstract: 27mhz transmitter 27mhz transmitter circuit npn power transistor ic 400ma NTE282
Text: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
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NTE282
27MHz,
400mA
100mA
-15mA,
-100mA
400mW,
27MHz
27MHz rf transmitter
27mhz transmitter
27mhz transmitter circuit
npn power transistor ic 400ma
NTE282
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2SC2314
Abstract: transistor 2sc2314 2sc2314 transistor DSA0027023
Text: Ordering number:EN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C
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EN485F
2SC2314
27MHz
2009B
2SC2314]
O-126
2SC2314
transistor 2sc2314
2sc2314 transistor
DSA0027023
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2SC4735
Abstract: 2084B
Text: Ordering number:EN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.
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EN3974
2SC4735
27MHz
2084B
2SC4735]
2SC4735
2084B
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EC12T
Abstract: 2SC4735 ITR07494 ITR07495 ITR07496 ITR07497
Text: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.
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ENN3974
2SC4735
27MHz
2084B
2SC4735]
EC12T
2SC4735
ITR07494
ITR07495
ITR07496
ITR07497
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27MHz rf transmitter
Abstract: 27mhz transmitter circuit NTE282
Text: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
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NTE282
27MHz,
400mA
100mA
400mW,
27MHz
27MHz rf transmitter
27mhz transmitter circuit
NTE282
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2SC4272
Abstract: ITR06606 ITR06607 ITR06608 ITR06609 ITR06610 ITR06611
Text: Ordering number:ENN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 0.4 1.0
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ENN2970
2SC4272
27MHz
2SC4272]
25max
2SC4272
ITR06606
ITR06607
ITR06608
ITR06609
ITR06610
ITR06611
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Untitled
Abstract: No abstract text available
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:
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NTE236
27MHz,
O220AB
NTE236
O220AB
27MHz
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27mhz
Abstract: 2SC4272 SMD 6 PIN IC cb transceiver
Text: Transistors SMD Type 27MHz CB Transceiver Driver Applications 2SC4272 Features Small Size Making It Easy To Provide High-Density, Small-Sized Hybrid ICs. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 75 V Collector-Emitter Voltage
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27MHz
2SC4272
500mA
27MHz
2SC4272
SMD 6 PIN IC
cb transceiver
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.
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ENN3974
2SC4735
27MHz
2084B
2SC4735]
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Untitled
Abstract: No abstract text available
Text: HT82D22R/HT82D22A 27MHz Two Channel RX 8-Bit MCU Features • USB Specification Compliance - Conforms to USB specification V2.0 - Conforms to USB HID specification V1.11 · RF tuner, mixer, transistors, passives, coils, and · Supports 1 Low-speed USB control endpoint and
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HT82D22R/HT82D22A
27MHz
12MHz
16-bit
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2SC2314
Abstract: 2sc2314F ITR05122 ITR05118 ITR05119 ITR05120 ITR05121 2sc2314 transistor
Text: Ordering number:ENN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8 0.8 0.6 15.5 0.5 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
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ENN485F
2SC2314
27MHz
2009B
2SC2314]
O-126
2SC2314
2sc2314F
ITR05122
ITR05118
ITR05119
ITR05120
ITR05121
2sc2314 transistor
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27mhz rf amplifier
Abstract: 27mhz rf ic 27mhz transistor "RF Power Amplifier" RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2SC2716
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION •High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS Ta=25℃
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2SC2716
Gp12dB
27MHz,
27MHz
27mhz rf amplifier
27mhz rf ic
27mhz transistor
"RF Power Amplifier"
RF POWER TRANSISTOR NPN
27mhz rf amplifier NPN transistor
2SC2716
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27mhz rf amplifier NPN transistor to220
Abstract: 2SC2078 RF POWER TRANSISTOR NPN 2sc2078 2sc2078 amplifier 2sc2078 Transistor 27mhz rf amplifier 27mhz rf amplifier NPN transistor ITR05108 ITR05109 ITR05110
Text: Ordering number:ENN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2 0.8 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220
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ENN462E
2SC2078
27MHz
2010C
2SC2078]
O-220
27mhz rf amplifier NPN transistor to220
2SC2078
RF POWER TRANSISTOR NPN 2sc2078
2sc2078 amplifier
2sc2078 Transistor
27mhz rf amplifier
27mhz rf amplifier NPN transistor
ITR05108
ITR05109
ITR05110
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2SC781
Abstract: 27mhz transistor TA-251C 251C 2SC78X
Text: 2SC781 2SC781 NPN I t 7 i v 7 U 3 V h ^ V v X ^ /N P N SILICON EPITAXIAL TRANSISTOR 27MHz ^ h "7 V ' > “- / \ ^ i l ’tti^ jffl/T ra n s c e iv e r Power Output ft ^/FEATURES •2SC78X 27MHz CB K S g L S f o $ tz W £ < D tz i6 A M % m £ f< v n ffi< D m M i
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2SC781
27MHz
2SC78X
2SC781
27MHz,
800mW
TC-25Â
O-205MD
27mhz transistor
TA-251C
251C
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2SC2312
Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating
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2SC2312
27MHz
27MHz,
-30dB
-62dB
-65dB.
2SC2312
100mA
27mhz transistor
27mhz rf ic
A7 NPN EPITAXIAL
A7 transistor
transistor A7
RF POWER TRANSISTOR
npn epitaxial planar high voltage transistor
FET Transistor Structure
mitsubishi vcb
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transistor 2SC2078
Abstract: 2sc2078 2sc2078 Transistor 2SC207S
Text: Ordering number : EN462E N0.462E 2SC2078 NPN Epitaxial Planar Silicon Transistor SANYO 27MHz RF Power Amp Applications Absolute Maxima» Ratings at Ta=25°C Colleetor-to-Base Voltage CBO Collector-to-Emitter Voltage VCER Emitter-to-Base Voltage VEB0 Collector Current
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EN462E
2SC2078
27MHz
150fl
2SC2078
2SC207S
transistor 2SC2078
2sc2078 Transistor
2SC207S
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