Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10 s per Byte/Word typical 35 MEMORY BLOCKS
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M29W160ET
M29W160EB
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10 s per Byte/Word typical 35 MEMORY BLOCKS
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M29W160ET
M29W160EB
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PDF
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856298
Abstract: No abstract text available
Text: Preliminary Data Sheet Part Number 856298 1220 MHz SAW Filter Features • • • • • • • • • For broadband access applications Usable bandwidth 10 MHz Low loss High attenuation No impedance matching required for operation at 200 Ω Balanced operation
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27-Jun-2003
856298
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet Part Number 856298 1220 MHz SAW Filter Features • • • • • • • • • For broadband access applications Usable bandwidth 10 MHz Low loss High attenuation No impedance matching required for operation at 200 Ω Balanced operation
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27-Jun-2003
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IEC61360-4
Abstract: EIA-724
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160ET
M29W160EB
TSOP48
IEC61360-4
EIA-724
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PDF
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M29W160ET
Abstract: M29W160E M29W160EB TFBGA48 27-Nov-2002
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160ET
M29W160EB
TSOP48
TFBGA48
M29W160ET
M29W160E
M29W160EB
TFBGA48
27-Nov-2002
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS
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M29W160ET
M29W160EB
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet Part Number 856331 836.5/881.5 MHz SAW Duplexer Features • • • • • • • • • • For AMPS, CDMA and TDMA applications Usable bandwidth 25 MHz each band High Tx-Rx isolation Low insertion loss High attenuation Single-ended operation
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15x45°
27-Jun-2003
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY n SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read n ACCESS TIMES: 70, 90ns n PROGRAMMING TIME – 10 s per Byte/Word typical n 35 MEMORY BLOCKS
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M29W160ET
M29W160EB
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PDF
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9668e
Abstract: SR 13009 BY284 455e 2246 09 06 232 6843 9826e MAR 618 transistor MS1324 RX3 0633
Text: Product Characterization Report for the SP3243 Family of Products Prepared By: Velvet Doung & Greg West Date: Aug 17, 2006 SP3243 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure Data Summary for Key Parameters
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SP3243
SP3243
084E03
059E03
000E03
SP3243EBEA_
MS1324
9668e
SR 13009
BY284
455e
2246
09 06 232 6843
9826e
MAR 618 transistor
MS1324
RX3 0633
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PDF
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M29W160EB
Abstract: M29W160E M29W160ET TFBGA48 2aa 555
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS
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Original
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M29W160ET
M29W160EB
M29W160EB
M29W160E
M29W160ET
TFBGA48
2aa 555
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PDF
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M29W160E
Abstract: M29W160EB M29W160ET TFBGA48
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS
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Original
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M29W160ET
M29W160EB
M29W160E
M29W160EB
M29W160ET
TFBGA48
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PDF
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MTA-156
Abstract: awg 78001
Text: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. B 1 7 7 -3 4 RALPH VESTAL YES YES YES YES YES YES YES YES YES YES YES NO NO NO NO NO NO NO A/C BUSINESS GROUP 3323 NO NO NO NO LEADFREE
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27JUN2003
MTA-156
awg 78001
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PDF
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114-18063
Abstract: 114-18063-1 114-18063-123 114-18063-12 PBT-GF 1-967642-1 MVQ30 DIN 16901-140 Tyco 967642
Text: 7 T H IS DRAWING IS U N P U B L I S H E D . VE RTRAUL ICHE UNVE ROE ER ENTL IEH TE ZEICHNUNG COPYRIGHT 2002 BY TYCO ELECTRONICS im R ELE A S E D FOR P U B LIC A T IO N FREI FUER V E R O E F F E N T L I C H U N G CORPORATION. ALL RIGHTS RESERVED. AI I F R F T H T F
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OCR Scan
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20SEP2002
27JUN2003
20JUL2005
114-18063
114-18063-1
114-18063-123
114-18063-12
PBT-GF
1-967642-1
MVQ30
DIN 16901-140
Tyco 967642
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST J LTR DWN DATE DESCRIPTION RELEASED FJD0-0230-03 04JUL03 R EVIS ED FJD 0-0235-03 07JUL03 - 1 :$ APVD N.S Y.K N.S Y.K
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OCR Scan
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FJD0-0230-03
04JUL03
07JUL03
UL157KIR]
JUN03
27JUN2003
FJ040691
717457A
31MAR2000
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PDF
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