5STP 27H1800
Abstract: 27H1200 27H1800
Text: Key Parameters VDSM = 1800 ITAVM = 3000 ITRMS = 4710 ITSM = 47000 VT0 = 0.88 rT = 0.103 V A A A V mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA 1048-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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27H1800
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67xVDRM
CH-5600
5STP 27H1800
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5STP27H1800
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 3000 A 4710 A 47000 A 0.88 V 0.103 mΩ Ω Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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27H1800
5SYA1048-02
27H1800
27H1600
27H1200
CH-5600
5STP27H1800
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Untitled
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 3000 A 4710 A 47000 A 0.88 V 0.103 mΩ Ω Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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27H1800
5SYA1048-02
27H1600
27H1200
CH-5600
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Untitled
Abstract: No abstract text available
Text: VDSM = 1800 V ITAVM = 3000 A ITRMS = 4710 A ITSM = 47000 A VT0 = 0.88 V rT = 0.103 mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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27H1800
5SYA1048-02
27H1800
27H1600
27H1200
67xVDRM
CH-5600
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