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    27C TVS Search Results

    27C TVS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TCM1050D Texas Instruments Dual Transient-Voltage Suppressor 8-SOIC Visit Texas Instruments Buy
    SF Impression Pixel

    27C TVS Price and Stock

    Diotec Semiconductor AG TGL34-27C

    TVS Diode - MiniMelf - 21.8V - 150W - Unidirectional
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TGL34-27C
    • 1 -
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    • 1000 -
    • 10000 $0.0409
    		Buy Now

    Diotec Semiconductor AG TGL41-27C

    TVS Diode - Melf - 21.8V - 400W - Unidirectional
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TGL41-27C
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0442
    		Buy Now

    27C TVS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: P6KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.5 to 376 Volts POWER 600 Watts DO-15 Unit: inch mm Recongnized File # E210467 FEATURES 1.0(25.4)MIN. .034(.86) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O


    Original     		PDF DO-15 E210467 2002/95/EC DO-15 solderable00

    300CA

    Abstract: No abstract text available
    Text: P4KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.5 to 376 Volts POWER 400 Watts DO-41 Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O 1.0(25.4)MIN. .034(.86) • Excellent clamping capability


    Original     		PDF DO-41 2002/95/EC DO-41 MIL-STD-750, 300CA

    212 t sot-23

    Abstract: marking code 27c SOT 23 J2411 SOT-23 15D SOT-23 marking 15d marking 15d 212 sot-23 212 s sot-23 27C SOT23 27C TVS
    Text: MMBZ15VDLT1, MMBZ27VCLT1 Preferred Devices 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1, MMBZ27VCLT1 OT-23 MMBZ27VCLT1 J2411 212 t sot-23 marking code 27c SOT 23 J2411 SOT-23 15D SOT-23 marking 15d marking 15d 212 sot-23 212 s sot-23 27C SOT23 27C TVS

    SAE J2411

    Abstract: J2411 27C zener TVS Diode SOT-23 marking 15d MMBZ15VDLT1G MMBZ15VDLT3 MMBZ15VDLT3G MMBZ27VCLT1 MMBZ27VCLT1G MMBZ15VDLT1
    Text: MMBZ15VDLT1, MMBZ27VCLT1 Preferred Devices 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT-23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1, MMBZ27VCLT1 OT-23 MMBZ27VCLT1 MMBZ15VDLT1/D SAE J2411 J2411 27C zener TVS Diode SOT-23 marking 15d MMBZ15VDLT1G MMBZ15VDLT3 MMBZ15VDLT3G MMBZ27VCLT1G MMBZ15VDLT1

    Untitled

    Abstract: No abstract text available
    Text: MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G MMBZ27VCLT1G/SZMMBZ27VCLT1G MMBZ15VDLT1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G MMBZ27VCLT1G/SZMMBZ27VCLT1G MMBZ15VDLT1/D

    SZMMBZ2

    Abstract: marking 15d MMBZ15VDLT1G SZMMBZ1
    Text: MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G OT-23 MMBZ27VCLT1G/SZMMBZ27VCLT1G MMBZ15VDLT1/D SZMMBZ2 marking 15d MMBZ15VDLT1G SZMMBZ1

    J2411

    Abstract: MMBz27VCLT1G SZMMBZ2 MARKING zeners SOT-23 marking 15d marking code 27c SOT 23 automotive ecu manual SZMMBZ27VCLT1 J241
    Text: MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G OT-23 MMBZ27VCLT1G/SZMMBZ27VCLT1G MMBZ15VDLT1/D J2411 MMBz27VCLT1G SZMMBZ2 MARKING zeners SOT-23 marking 15d marking code 27c SOT 23 automotive ecu manual SZMMBZ27VCLT1 J241

    marking 15d

    Abstract: marking code 27c SOT 23
    Text: MMBZ15VDLT1, MMBZ27VCLT1, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com 1 SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1, MMBZ27VCLT1, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G OT-23 MMBZ27VCLT1/SZMMBZ27VCLT1G MMBZ15VDLT1/D marking 15d marking code 27c SOT 23

    mmbz27vclt1g

    Abstract: SAE J2411 MMBZ15VDLT1 J2411 MMBZ15VDLT1G MMBZ27VCLT1 27C zener MMBZ15VDLT3 MMBZ15VDLT3G automotive ecu manual
    Text: MMBZ15VDLT1, MMBZ27VCLT1 Preferred Devices 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1, MMBZ27VCLT1 OT-23 MMBZ27VCLT1 MMBZ15VDLT1/D mmbz27vclt1g SAE J2411 MMBZ15VDLT1 J2411 MMBZ15VDLT1G 27C zener MMBZ15VDLT3 MMBZ15VDLT3G automotive ecu manual

    Diode SOT-23 marking 15d

    Abstract: Diode SOT-23 marking 27C SAE J2411 marking code 27c 27C TVS 27C zener TVS Diode SOT-23 marking 15d J2411 MMBZ15VDLT1 MMBZ15VDLT1G
    Text: MMBZ15VDLT1, MMBZ27VCLT1 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1, MMBZ27VCLT1 OT-23 MMBZ27VCLT1 MMBZ15VDLT1/D Diode SOT-23 marking 15d Diode SOT-23 marking 27C SAE J2411 marking code 27c 27C TVS 27C zener TVS Diode SOT-23 marking 15d J2411 MMBZ15VDLT1 MMBZ15VDLT1G

    FZH 105 A

    Abstract: FZH 165 b fzh 111 FZH 265 b FZH 145 b fzh 171 FZH 131 fzh 145 FZH 265 fzh 105
    Text: 1.5SMC SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.5 to 214 Volts PEAK PULSE POWER 1500 Watts SMC/DO-214AB Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated chip junction in SMC/DO-214AB package


    Original     		PDF SMC/DO-214AB SMC/DO-214AB FZH 105 A FZH 165 b fzh 111 FZH 265 b FZH 145 b fzh 171 FZH 131 fzh 145 FZH 265 fzh 105

    27C TVS

    Abstract: AX28 27c2000
    Text: O K I semiconductor MSM27C2000 262,144-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 27C 2000 is a 262,144-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. The M SM 27C 2000 is m anufactured by CM O S double silicon gate technology


    OCR Scan     		PDF MSM27C2000 144-Word 144-w 32-pin AX275 -------------------------------MSM27C2000 MSM27C2000 MSM27C2000« 27C TVS AX28 27c2000

    12.75V PGM

    Abstract: 27C2000-15 j727 27c2000-12 MAX275 MAX28 MSM27C2000-12 MSM27C2000-15 27c2000
    Text: O K I semiconductor MSM27C2000 262,144-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 27C 2000 is a 262,144-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. The M S M 27C 2000 is m anufactured by CM O S double silicon gate technology


    OCR Scan     		PDF MSM27C2000 144-Word MSM27C2000 32-pin MSM27C2000-12) MSM27C2000-15) MAX275 12.75V PGM 27C2000-15 j727 27c2000-12 MAX28 MSM27C2000-12 MSM27C2000-15 27c2000

    D27C64

    Abstract: intel D27c64 rt 7257 NEC D27C64 ha 11747 D27C64 intel nec A2C 71454 upd27c64
    Text: ì ; SEC OM ,y NEC Electronics Inc. 006074 Pin C onfiguration A d is tin c tiv e fe atu re o f the ¿/PD27C64 is an o u tp u t enable OE separate fro m the c h ip enable (CE). The OE c o n tro l elim ina tes bus c o n te n tio n in m u ltip le -b u s m icro p ro c e s s o r systems. The//P D 27C 6 4 features fast,


    OCR Scan     		PDF 27C64 uPD27C64 536-bit /PD27C64 D27C64 intel D27c64 rt 7257 NEC D27C64 ha 11747 D27C64 intel nec A2C 71454

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R January 1998 tm FM27C256 262,144-Bit 32K x 8 High Speed CMOS EPROM General Description The FM27C256 is a High Performance 32K x 8 UV Erasable EPROM. It is manufactured using an advanced CMOS pro­ cess technology enabling it to operate at speeds as fast as


    OCR Scan     		PDF FM27C256 144-Bit FM27C256 processors7200

    27c010-55

    Abstract: 27C512 128K 27C040 FM27C010 NM27C010 27C256 DIP Fairchild F8
    Text: S E M IC O N D U C T O R J anuary 1998 tm FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C010 is a High Perform ance 128K x 8 UV Eras­ able EPROM. It is m anufactured using an advanced C M OS process technology enabling it to operate at speeds as fast


    OCR Scan     		PDF FM27C010 576-Bit FM27C010 27c010-55 27C512 128K 27C040 NM27C010 27C256 DIP Fairchild F8

    27c010-55

    Abstract: Fairchild F8
    Text: S E M IC O N D U C T O R J anuary 1998 tm FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C010 is a High Perform ance 128K x 8 UV Eras­ able EPROM. It is m anufactured using an advanced C M OS process technology enabling it to operate at speeds as fast


    OCR Scan     		PDF FM27C010 576-Bit 27c010-55 Fairchild F8

    27C64-30

    Abstract: Fujitsu 27C64-30 i3001 Fujitsu 27C64
    Text: FUJITSU M I C RO ELECT RO NICS S3E D 37^7^5 000=1152 7 C M O S IU V : E R A S A B L F U J IT S U 6 5 5 3 6 -B C E R E A ò nl ^ m em ofm M CMOS 8192X8BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 bit static complementary MOS


    OCR Scan     		PDF 8192X8BIT 27C64 28-pin 32-Pad 27C64. 320sec. 16sec. 27C64-25 27C64-30 37M17b2 27C64-30 Fujitsu 27C64-30 i3001 Fujitsu 27C64

    MBM27C256A

    Abstract: MBM27C256A-25-W
    Text: FUJITSU MI CR OELE C T R ON I C S 7û dF | 374^7b2 D003SE7 S ~ J ~ T - V ¿ •/> 2T FU JITSU MOS Memories M B M 2 7 C 2 5 6 A -2 0 -W M B M 2 7 C 2 5 6 A -2 5 -W CMOS 32,768 x 8-Bit UV Erasable and Electrically Programmable Read Only Memory D es c rip tio n


    OCR Scan     		PDF 37MT7ba MBM27C256A-20-W MBM27C256A-25-W MBM27C256A-W 144-bits 28-pin 32-pad MBM27C256A-W. 37MT7L 0G3535 MBM27C256A MBM27C256A-25-W

    P8KE

    Abstract: No abstract text available
    Text: P6KE6.8 thru P6KE440CA 600 Watt Axial Leaded TVS TEL: 805-498-2111 FAX : 805-498-3804 DESCRIPTION FEATURES: The P6KE series of transient voltage suppressors are designed to protect components from over voltages caused by electrostatic discharge ESD , electrical fast


    OCR Scan     		PDF P6KE440CA and498-2111 DO-15 00422A P8KE

    27C128-20

    Abstract: 27C128-25 MAX165 MAX200 MAX250 MSM27C128AS b409 PF412
    Text: O K I semiconductor MSM27C128AS 1 6 3 8 4 x 8 BIT UV E R A S A B L E E L E C T R IC A L L Y PRO GRAM M ABLE READ -O N LY MEMORY G E N E R A L D ESC R IP TIO N T h e M S M 2 7 C 1 2 8 is a 1 6 3 8 4 w ords x 8 bit ultraviolet e ra sa b le and e le c tric a lly program m able


    OCR Scan     		PDF MSM27C128AS MSM27C1 MSM27C128 MAX200 MAX250 MAX300 27C128-20 27C128-25 MAX165 MSM27C128AS b409 PF412

    A12C

    Abstract: SPM27C64H20 PGMH 256x32
    Text: PF216-02 SPM27C64H 1 5 /2 0 CMOS 64K-BIT UV EPROM/OT PROM •A ccess Time 150ns/200ns •8 ,1 9 2 Words X 8 Bits Asynchronous •L o w Supply Current •DESCRIPTION The CMOS EPROM SPM27C64Hi5/2o is an 8,192 words x 8 bits erasable and electrically programmable ROM.


    OCR Scan     		PDF SPM27C64H PF216-02 64K-BIT 150ns/200ns SPM27C64Hi5/2o SPM27C64His/2o 28-pin SPM27C64Cis/2o* A12C SPM27C64H20 PGMH 256x32

    27C256 wsi

    Abstract: 27C256F
    Text: DE | TSBTbTG 0000214 G | T-U-Q-Z^ WAFER SCALE INTEGRATION WS27C256L ADVANCE INFORMATION WAFERSCAIÆ INTEGRATION, INC. 32K 8 CMOS EPROM X KEY FEATURES • 300 Mil Dip or Standard 600 Mil Dip Fast Access Time — 90 ns • EPI Processing Low Power Consumption


    OCR Scan     		PDF WS27C256L 27C256 WS27C256L WS27C256L-12S WS27C256L-12T WS27C256L-12TMB MIL-STD-883C 27C256 wsi 27C256F