LT1624
Abstract: LT1628 lt1775 lt1625 1N914 LT1506 LT1959 LT1959C LT1959CR LT1959I
Text: LT1959 4.5A, 500kHz Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1959 is a 500kHz monolithic buck mode switching regulator functionally identical to the LT1506 but optimized for lower output voltage applications. It will operate down
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LT1959
500kHz
LT1506
LT1506.
LT1625
LT1628
LTC1735
LT1775
LT1624
LT1628
lt1775
lt1625
1N914
LT1959
LT1959C
LT1959CR
LT1959I
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OC24
Abstract: OC48 ONET2591TA ONET2591TAY
Text: ONET2591TA www.ti.com SLLS669 – SEPTEMBER 2005 2.5-Gbps Transimpedance Amplifier With AGC and RSSI FEATURES APPLICATIONS • • • • • • • • • • • 1.8-GHz Bandwidth 2.6-kΩ Differential Transimpedance Automatic Gain Control AGC 6.6-pA/√Hz Typical Input Referred Noise
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ONET2591TA
SLLS669
125-Gbps
0625-Gbps
ONET2591TA
OC24
OC48
ONET2591TAY
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MBR16100CT Features • • • • • • • 16 Amp Guard ring for transient protection Low power loss high efficiency
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MBR16100CT
-50oC
150oC
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MBR16100CT Features • • • • 16 Amp Metal of siliconrectifier , majonty carrier conducton Guard ring for transient protection
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MBR16100CT
O-220AB
MBR16100CT
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Untitled
Abstract: No abstract text available
Text: ONET4291TA www.ti.com SLLS670 – SEPTEMBER 2005 4.25-Gbps Transimpedance Amplifier With AGC and RSSI FEATURES APPLICATIONS • • • • • • • • • • • 2.8-GHz Bandwidth 3.2-kΩ Differential Transimpedance Automatic Gain Control AGC 8.8-pA/√Hz Typical Input Referred Noise
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ONET4291TA
SLLS670
25-Gbps
25-Gbps,
125-Gbps,
0625-Gbps
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MBR15100CT Features • • • • 15 Amp Metal of siliconrectifier , majonty carrier conducton Guard ring for transient protection
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MBR15100CT
O-220AB
MBR15100CT
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marking MCC
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MBR16100CT Features • • • • 16 Amp Metal of siliconrectifier , majonty carrier conducton Guard ring for transient protection
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MBR16100CT
O-220AB
MBR16100CT
marking MCC
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lt1028
Abstract: LT317A
Text: LT1028/LT1128 Ultralow Noise Precision High Speed Op Amps FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1028 gain of –1 stable /LT1128(gain of +1 stable) achieve a new standard of excellence in noise performance with 0.85nV/√Hz 1kHz noise, 1.0nV/√Hz 10Hz noise. This
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LT1028/LT1128
/LT1128
85nV/â
75MHz
LT1028,
20MHz
LT1128)
LT1028/
LT1128
LT1028
lt1028
LT317A
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Untitled
Abstract: No abstract text available
Text: Ultrafast Recovery Modules HU100, 101 & 102 D G Std. Polarity Base is cathode Rev. Polarity Base is anode J H F C E A L Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F G H J K L B K Dim. Inches 1.52 .725 .605 1.182 .745 .152 .525 .156 .495 .120
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HU100,
HU10005*
HU10010*
HU10015*
HU10020*
HU10120*
HU10130*
HU10140*
HU10150*
600ubsidiaries,
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Untitled
Abstract: No abstract text available
Text: ONET4291TA www.ti.com SLLS670 – SEPTEMBER 2005 4.25-Gbps Transimpedance Amplifier With AGC and RSSI FEATURES APPLICATIONS • • • • • • • • • • • 2.8-GHz Bandwidth 3.2-kΩ Differential Transimpedance Automatic Gain Control AGC 8.8-pA/√Hz Typical Input Referred Noise
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ONET4291TA
SLLS670
25-Gbps
25-Gbps,
125-Gbps,
0625-Gbps
ONET4291TA
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Untitled
Abstract: No abstract text available
Text: ONET4291T SLLSE82 – APRIL 2011 www.ti.com 4.25-Gbps Transimpedance Amplifier With AGC and RSSI Check for Samples: ONET4291T FEATURES APPLICATIONS • • • • • • • • 1 • • • 2.8-GHz Bandwidth 3.2-kΩ Differential Transimpedance Automatic Gain Control AGC
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ONET4291T
SLLSE82
25-Gbps
25-Gbps,
125-Gbps,
0625-Gbps
ONET4291T
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CAP 103pF
Abstract: 1r5pf
Text: KOA SPEER ELECTRONICS, INC. TN-196 R9 AHA 10/22/04 Ceramic Chip Capacitors Type NPO, X5R, X7R, Y5V, Z5U CERTIFIED 1. General 1-1 Range of Application This document applies to miniaturized ceramic chip capacitors for applications in circuits of electronic devices.
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TN-196
CAP 103pF
1r5pf
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5-65pF
Abstract: No abstract text available
Text: NPO, X5R, X7R, Y5V, Z5U ceramic chip capacitors features • High Q factor • Low T.C.C. • Available in high capacitance values up to 100 µF dimensions and construction L Case Size W d Ceramic Body ceramic chip capacitors Electrodes Dimensions inches (mm)
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222PF
272PF
332PF
392PF
472PF
562PF
682PF
822PF
103PF
123PF
5-65pF
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TCC 47uF 20 6.3V
Abstract: No abstract text available
Text: NPO, X5R, X7R, Y5V, Z5U ceramic chip capacitors features • High Q factor • Low T.C.C. • Available in high capacitance values up to 100 µF dimensions and construction L Case Size W d Ceramic Body ceramic chip capacitors Electrodes Dimensions inches (mm)
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222PF
272PF
332PF
392PF
472PF
562PF
682PF
822PF
103PF
123PF
TCC 47uF 20 6.3V
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1r5pf
Abstract: 1R5P 8R2PF 223PF z5u .05 332pF 5r6pf capacitor 100pF 0805 datasheet 122PF 100PF
Text: TN-196 R1 Ceramic Chip Capacitors Type NPO, X7R, Y5V, Z5U CERTIFIED 1. General 1-1 Range of Application This document applies to miniaturized ceramic chip capacitors for applications in circuits of electronic devices. 2. Type Designation The type designation shall be the following form:
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TN-196
30ppm/
1r5pf
1R5P
8R2PF
223PF
z5u .05
332pF
5r6pf
capacitor 100pF 0805 datasheet
122PF
100PF
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CS5012A
Abstract: CS5014 CS5016
Text: CS5016 CS5014 CS5012A Semiconductor Corporation 16, 14 & 12-Bit, Self-Calibrating A/D Converters Features General Description CMOS A/D Converters • Monolithic Microprocessor Compatible The CS5012A/14/16 are 12, 14 and 16-bit monolithic analog to digital converters with conversion times of
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CS5016
CS5014
CS5012A
12-Bit,
CS5012A/14/16
16-bit
CS5012A/14)
CS5016)
CS5012A
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CS5012-BD24
Abstract: KL14 diode CS5012A CS5014 CS5016
Text: CS5016 CS5014 CS5012A Semiconductor Corporation 16, 14 & 12-Bit, Self-Calibrating A/D Converters Features General Description CMOS A/D Converters • Monolithic Microprocessor Compatible The CS5012A/14/16 are 12, 14 and 16-bit monolithic analog to digital converters with conversion times of
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CS5016
CS5014
CS5012A
12-Bit,
CS5012A/14/16
16-bit
CS5012A/14)
CS5016)
CS5012-BD24
KL14 diode
CS5012A
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13.56MHZ 3KW GENERATOR
Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A
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56MHz
56MHz,
DE375-102N12A
DEIC420
DE375-102N12A
0-471-03018-X
13.56MHZ 3KW GENERATOR
3KW GENERATOR
mosfet 5kw high power rf
5kw switching power supply design
HIGH FREQUENCY 5kw power Transformer
circuit diagram of 13.56MHz RF Generator
mosfet 3kw
3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS
3kw mosfet
equivalent circuit of power transformer 11kv
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Untitled
Abstract: No abstract text available
Text: I Radial Ceramic Capacitors ^ RADIAL CERAMIC CAPACITORS ivO A Le SPEER ELECTRONICS, IN C . Conformally coated radial MLC's. NPO, X7R, Y5U temperature coefficients available. Epoxy construction. Wide range of voltage offerings. RATINGS Dielectric Capacitance
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470pF
000pF
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chebyshev 3dB
Abstract: table for bessel and chebyshev response 200UA 40KHZ voltage controlled filter
Text: S5E D • ^7^0457 Q000314 3 ■ ON CHIP SYSTEMS CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Awe. Los Gatos» CA USA 408 395-3350 TLX No. 499-2868 C E M 3 3 8 7 LOW NOISE V.C. SIGNAL PROCESSOR Preliminary, January 1987 Description The CEM 3387 is a general purpose audio signal processor intended
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b7104S7
Q000314
chebyshev 3dB
table for bessel and chebyshev response
200UA
40KHZ
voltage controlled filter
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UFT20015
Abstract: UFT20140 UFT20005 UFT20010 UFT20020 UFT20120 UFT20130 UFT20150 UFT20260 UFT20270
Text: IJltrafast Recover y Modules r200, 201 ¥ Baseplate A=Common Anode V Ut T t i- h 1 I- r ^ . r ^ i i 1 c tH -1 1 i 11 -IAIE Baseplate Common Cathode °N | W ° Baseplate D=Doubler & 2 0 2 Dim . Inches Min. M illim e te rs Max. A -3.630 B 0.700 0.800 c —
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UFT20005*
UFT20010*
UFT20015*
UFT20020*
UFT20015
UFT20140
UFT20005
UFT20010
UFT20020
UFT20120
UFT20130
UFT20150
UFT20260
UFT20270
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UFT20120
Abstract: UFT200 UFT20005 UFT20010 UFT20015 UFT20130 UFT20140 UFT20150 UFT20260 UFT20270
Text: Ultrafast Recovery Modules UFT2QQ, 201 & 202 Dim. Inches ¥ Min. Baseplate A=Common Anode V Baseplate Common Cathode u t“ 1 1 1 — / T \ 1 / É i V r 1 °-N - 1 c i TT E I + H > Baseplate D=Doubler A B C E F G H N Q R U V W Max. -3.630 0.700 0.800
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UFT200,
UFT20005*
UFT20010*
UFT20015*
FT20020
UFT20120*
UFT20120
UFT200
UFT20005
UFT20010
UFT20015
UFT20130
UFT20140
UFT20150
UFT20260
UFT20270
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CEM3387
Abstract: 1569pF audio filter vcf
Text: aimr-wir CURTIS ELECTROMUSIC flfi »e| SSbMlSfl □DDDD4T 7 J 1 J 77 /3 CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Ave. Los Gatos, CA USA 408 395-3350 TLX No. 499-2868 C E M 3 3 8 7 LOW NOISE V.C. SIGNAL PROCESSOR Preliminary, January 1987 Description
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CS5012A
Abstract: CS5014 CS5016 cs5016-jp32 BT 815 transistor atl64
Text: CS5016/14/12A 16, 14, & 12-Bit, Self-Calibrating A/D Converters Description Features - The CS5012A/14/16 are 12,14 and 16-bit monolithic an alog to digital converters with conversion times of 7.2 |js, 14.25 |js and 16.25 |j s . Unique self-calibration circuitry
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CS5016/14/12A
12-Bit,
16-Bit
CS5016
CS5014
CS5012A
150mW
CS5012A/14/16
CS501X/511X
cs5016-jp32
BT 815 transistor
atl64
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