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    2719 DIODE Search Results

    2719 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    2719 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 19-2719; Rev 0; 04/03 250ksps, +3V, 8-/4-Channel, 12-Bit ADCs with +2.5V Reference and Parallel Interface Power consumption is only 5.7mW VDD = VLOGIC at the maximum sampling rate of 250ksps. Two softwareselectable power-down modes enable the MAX1261/ MAX1263 to be shut down between conversions;


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    PDF 250ksps, 12-Bit 250ksps. MAX1261/ MAX1263 MAX1261 MAX1261/MAX1263

    MAX1261

    Abstract: MAX1261ACEI MAX1261AEEI MAX1261BCEI MAX1263 d7225
    Text: 19-2719; Rev 0; 04/03 250ksps, +3V, 8-/4-Channel, 12-Bit ADCs with +2.5V Reference and Parallel Interface Excellent dynamic performance and low power, combined with ease of use and small package size, make these converters ideal for battery-powered and dataacquisition applications or for other circuits with demanding power consumption and space requirements.


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    PDF 250ksps, 12-Bit MAX1261 28-pin MAX1263 24-pin MAX1262/MAX1264 MAX1261/MAX1263 MAX1261ACEI MAX1261AEEI MAX1261BCEI d7225

    D4457N

    Abstract: D2228N D448N D5807N D758N d4457n m3.2
    Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro


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    PDF D448N D758N D2228N D4457N D5807N D4457N D2228N D448N D5807N D758N d4457n m3.2

    D4457N

    Abstract: 4336 326.4 D2228N D448N D5807N D758N 4807
    Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro


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    PDF D448N D758N D2228N D4457N D5807N D4457N 4336 326.4 D2228N D448N D5807N D758N 4807

    D2228N

    Abstract: D4457N D448N D5807N D5809N D758N
    Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V + - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]


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    PDF D448N D2228N D5809N D2228N D4457N D448N D5807N D5809N D758N

    D4457N

    Abstract: D2228N D448N D5807N D5809N D758N KC30 613
    Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]


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    PDF D448N D2228N D5809N D4457N D2228N D448N D5807N D5809N D758N KC30 613

    3771

    Abstract: 3942 9585 D2228N D448N D5809N D758N
    Text: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    PDF D448N D758N D2228N D5809N 182228N 3771 3942 9585 D2228N D448N D5809N D758N

    9585

    Abstract: D2228N D448N D5809N D758N
    Text: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    PDF D448N D758N D2228N D5809N 18suant 9585 D2228N D448N D5809N D758N

    ACT4533C

    Abstract: usb power
    Text: ACT4533C+CHY100 5V/2.1A&9V/1.5A Car Charger Solution Application Report Car Charger Using ACT4533C+CHY100 FEATURES Wide input voltage range from 10V to 36V 125kHz switching frequency eases EMI design Stable with low-ESR ceramic capacitors 2% feedback voltage accuracy


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    PDF ACT4533C CHY100 125kHz V/12V usb power

    HP 4200

    Abstract: HP 4502 MTL 5541 cb 4220
    Text: ATE 4200, 5200, 5800 Series Computer Assisted Program Generation A software package to provide fixtures and guarded test programs in the shortest possible time • In-Circuit test program generation software · Designed for use with Microsoft Windows A special .cb file editor called MkNet is built into CAPG. This can


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    PDF

    D4457N

    Abstract: D2228N D448N D5807N D5809N D758N diode 1304 16-04 thyristor
    Text: M6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    PDF D448N D758N D2228N D5809N 22228N D4457N D2228N D448N D5807N D5809N D758N diode 1304 16-04 thyristor

    D4457N

    Abstract: 16-04 thyristor D2228N D448N D5807N D5809N D758N
    Text: M6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    PDF D448N D758N D2228N D5809N D4457N 16-04 thyristor D2228N D448N D5807N D5809N D758N

    SPEED CON 5200

    Abstract: HP 4502 EN50081-1 EN50082-1
    Text: ATE 5200 Power Manufacturing Defects Analyzer A range of Power Manufacturing Defects Analyzers offering the highest throughput capability to the electronics manufacturing industry. • Up to 1200 components/sec test speed • Maximum of 2112 pins • Microsoft WindowsTM operating system


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    PDF

    46883

    Abstract: 130dB 05 5115 50
    Text: issue 4.qxd 07/Dec/2004 10:21 Page 1 Microwave 2186/87 5 & 20 GHz Programmable Attenuators Wide range GPIB programmable attenuator with outstanding accuracy for bench top, automatic and standards applications • Attenuation from 0 to 130 dB Calibration Data to International Standards


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    PDF 07/Dec/2004 IEEE-488 46883 130dB 05 5115 50

    Untitled

    Abstract: No abstract text available
    Text: AON6506 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL


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    PDF AON6506

    Untitled

    Abstract: No abstract text available
    Text: AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL


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    PDF AOD510/AOI510 O-251A

    aon6504

    Abstract: No abstract text available
    Text: AON6504 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL


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    PDF AON6504 aon6504

    Untitled

    Abstract: No abstract text available
    Text: AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL


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    PDF AOD510/AOI510 O-251A

    Untitled

    Abstract: No abstract text available
    Text: AON6506 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL


    Original
    PDF AON6506

    Untitled

    Abstract: No abstract text available
    Text: AON6504 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL


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    PDF AON6504

    Diode FAJ 32

    Abstract: 2SK2719 SC-65 Diode FAJ 45
    Text: T O S H IB A 2SK2719 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2719 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance


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    PDF 2SK2719 Diode FAJ 32 SC-65 Diode FAJ 45

    1N4687 DO-7

    Abstract: No abstract text available
    Text: Zener Regulator Diodes Part N um ber M icrosem i Division Scottsdale Scottsdale JAN1N4620AUR-1 Scottsdale Scottsdale JAN TX1N 4620 Scottsdale JAN TX1N4620-1 JANTX1N4620AUR-1 Scottsdale Scottsdale JAN TX V1N 4620 Scottsdale JANTXV1N4620-1 JAN TXV1N 4620AU R -1 Scottsdale


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    PDF JAN1N4620AUR-1 TX1N4620-1 JANTX1N4620AUR-1 1N4687 DO-7

    C-2719

    Abstract: No abstract text available
    Text: Photosensor Amplifiers Amplify a low level photocurrent with low noise Photosensor amplifiers are current-to-voltage conversion amplifiers de­ signed to detect very low photocurrent from a photodiode. Dry battery op­ eration allows you to use these amplifiers anywhere. Thus, there is no


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    PDF C6386 C2719 C4890 C-2719

    Untitled

    Abstract: No abstract text available
    Text: 0 1E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications — HARRIS SEMICON» SECTOR 37E D B 4302571 19686 0057145 Photon Coupled Isolator H11A1, H11A2, H11A3, HT1A4, H11A5 T W J-S 3 ? *H A S Ga As Infrared Em itting Diode & NPN Silicon Photo-Transistor


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    PDF H11A1, H11A2, H11A3, H11A5 92CS-42662 92CS-429S1