2sc2712
Abstract: C 029 Transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE
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2SC2712
150mA
OT-23
OT-323
2SC2712L
2SC2712G
2SC2712L-x-AE3-R
2SC2712G-x-AE3-R
2SC2712L-x-AL3-R
2SC2712G-x-AL3-R
2sc2712
C 029 Transistor
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Honda Connectors
Abstract: BHR-03VS-1 LMX1622-05-01 LMX1622-05-02 LMX1622-05-03 LXM1622-05-XX QZ-19-3F01 SM02
Text: A M I C R O S E M I RangeMAX LXM1622-05-xx DUAL 5W, DIGITAL DIMMING CCFL INVERTER MODULE C O M P A N Y P RELIMINARY D ATA S HEET The resultant “burst drive” that energizes the lamp was designed specifically to ensure that no premature lamp degradation occurs See the “How
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LXM1622-05-xx
LXM1612-12
Honda Connectors
BHR-03VS-1
LMX1622-05-01
LMX1622-05-02
LMX1622-05-03
LXM1622-05-XX
QZ-19-3F01
SM02
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Untitled
Abstract: No abstract text available
Text: Transistor 2SD0637 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current
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2SD0637
2SD637)
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KTC3198A
Abstract: 41BL
Text: SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ・Low Noise : NF=1dB(Typ.). at f=1kHz.
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KTC3198A
150mA
KTA1266A.
270Hz
KTC3198A
41BL
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Transistor hFE CLASSIFICATION Marking CE
Abstract: KTA2017 KTC4077 hFE CLASSIFICATION Marking CE hfe 300
Text: SEMICONDUCTOR KTC4077 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ・High Voltage : VCEO=120V. B M M ・Excellent hFE Linearity DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + ・Low Noise : NF=1dB Typ. , 10dB(Max.).
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KTC4077
KTA2017.
Transistor hFE CLASSIFICATION Marking CE
KTA2017
KTC4077
hFE CLASSIFICATION Marking CE
hfe 300
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2SB0709A
Abstract: 2SB709A 2SD0601A 2SD601A
Text: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and
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2SB0709A
2SB709A)
2SD0601A
2SD601A)
2SB0709A
2SB709A
2SD0601A
2SD601A
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Untitled
Abstract: No abstract text available
Text: UTC 79LXX LINEAR INTEGRATED CIRCUIT 3-TERMINAL 0.1A NEGATIVE VOLTAGE REGULATOR SOP-8 DESCRIPTION The UTC 79LXX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that required supply current up to 100mA. 1 TO-92
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79LXX
79LXX
100mA.
100mA
OT-89
OT-89:
QW-R101-003
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UMT222A
Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
UMT222A
TRANSISTOR 1P
transistors marking 1p
BC847B
BC857B
MMST2222A
PN2222A
T116
B128D
MARKING 5D NPN
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U232p9
Abstract: UPS APC CIRCUIT future scope of wireless charger mba mini projects APC UPS repair 220V ac to 9V dc converter circuit APC smart 1000 ups low cost mini project simple make protect apc smart ups 1000 9053-0000
Text: FIS HAND HELD MINI-OTDR FIS MINI-OTDR FEATURES NEW LOWER PRICE! TEST EQUIPMENT stry • Lowest Cost Multi-Wavelength OTDR in the Indus Industry • Small and Lightweight Hand Held Case • One Button Scan • Data Storage and Data Download up to 255 Traces
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FSM-50S
FTB-150
CMA4500
U232p9
UPS APC CIRCUIT
future scope of wireless charger
mba mini projects
APC UPS repair
220V ac to 9V dc converter circuit
APC smart 1000 ups
low cost mini project simple make protect
apc smart ups 1000
9053-0000
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KTA1504S
Abstract: KTC3875S
Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A 700. 3 G High hFE : hFE=70 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H Low Noise : NF=1dB(Typ.), 10dB(Max.).
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KTC3875S
KTA1504S.
270Hz
KTA1504S
KTC3875S
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lxm1612xxxx
Abstract: Honda Connectors BHR-03VS-1 LMX1622-05-01 LMX1622-05-02 LMX1622-05-03 LXM1622-05-XX QZ-19-3F01 SM02 5422K
Text: A M I C R O S E M I RangeMAX LXM1622-05-xx DUAL 5W, DIGITAL DIMMING CCFL INVERTER MODULE C O M P A N Y P RELIMINARY D ATA S HEET The resultant “burst drive” that energizes the lamp was designed specifically to ensure that no premature lamp degradation occurs See the “How
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LXM1622-05-xx
LXM1612-12
lxm1612xxxx
Honda Connectors
BHR-03VS-1
LMX1622-05-01
LMX1622-05-02
LMX1622-05-03
LXM1622-05-XX
QZ-19-3F01
SM02
5422K
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2SB642
Abstract: No abstract text available
Text: Transistors 2SB0642 2SB642 Silicon PNP epitaxial planar type For low-power general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) (0.85) 0.45±0.05 Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage
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2SB0642
2SB642)
2SB642
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN0C301 XN1C301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 2 2.8+0.2 –0.3 5 5˚ Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.)
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XN0C301
XN1C301)
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HHM290
Abstract: No abstract text available
Text: omega.com OMEGAnet OnLine Service www.omega.com Benelux: Internet e-mail info@omega.com One Omega Drive, Box 4047 Stamford, CT 06907-0047 Tel: 203 359-1660 e-mail: info@omega.com Canada: 976 Bergar Laval (Quebec) H7L5A1 Tel: (514) 856-6928 e-mail: info@omega.ca
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631111ed
EN61010-1
30minutes
12Vmax.
202mm
100mm
HHM290
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MMBTSC3875
Abstract: No abstract text available
Text: MMBTSC3875LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol
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MMBTSC3875LT1
OT-23
270Hz
MMBTSC3875
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KTA2014F
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700. D 3 K ・Complementary to KTA2014F.
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KTC4075F
KTA2014F.
270Hz
KTA2014F
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2SB0709A
Abstract: 2SB709A 2SD0601A 2SD601A XP04601 XP4601
Text: Composite Transistors XP04601 XP4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65 1 6 2 5 3 4 +0.05 0 to 0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A) 0.12 –0.02 0.9±0.1
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XP04601
XP4601)
2SD0601A
2SD601A)
2SB0709A
2SB709A)
2SB709A
2SD601A
XP04601
XP4601
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transistor 131 8D
Abstract: TRANSISTOR 8d
Text: BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B !External dimensions Units : mm !Features 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW. BC858BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 BC858B Pakaging type UMT3 G3K
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BC858BW
BC858B
BC848B
BC848BW.
BC858BW
BC858B
transistor 131 8D
TRANSISTOR 8d
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AN7086S
Abstract: No abstract text available
Text: ICs for Cassette, Cassette Deck AN7086S Recording/Playback Pre-/Power Amplifier IC for 3V Microcassette • Overview Unit : mm 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 0.3 7.2±0.3 9.4±0.3 2.0±0.2 0.15 0.925 1.27 0.1±0.1 circuit 15.3±0.3
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AN7086S
AN7086S
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2SC400
Abstract: 8S040 Produced by Perfect Crystal Device Technology 2SC400 M
Text: 400 2SC 5 / U D > N P N X t :^ 2 / ^ W B h 5 > y ^ P C T Ä Ä SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) mmmcmuRj o o ' f * i-'srm o H ig h F re q u e n c y ° H ig h Sp eed • h •? -y ^ . m A m p lifie r S w itc h in g y • v 1- y • * 4 •
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300ns
8SA300
28A500
50MHz
2SC400
5011Hz
2SC400
8S040
Produced by Perfect Crystal Device Technology
2SC400 M
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2SC1815
Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
Text: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL
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2sc1815
2SC1815
2SC1815GR
2SC1815-GR
2SC1815Y
2sc1815 transistor
2SC1815-Y
asC1815
2SC18150
lbfb
2SC1815Y GR
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20 pin TFT fujitsu
Abstract: NL10276AC30 nec tft display module NL10276AC30-04E DOD-H-7242
Text: NEC TFT COLOR LCD MODULE Type: NL10276AC30-04E 38cm 15 Type , XGA SPECIFICATIONS (First Edition) Preliminary All information in this document is subject to change without prior notice. NEC Corporation Display Device Operations Unit Color LCD Division Application Engineering Department
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NL10276AC30-04E
DOD-H-7242
20 pin TFT fujitsu
NL10276AC30
nec tft display module
DOD-H-7242
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTC4077
KTA2017.
270Hz
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KTA1504
Abstract: KTC3875
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3875 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES DIM A B C D E G H J K L M N P • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High Iife : h FE = 70 ~ 7 0 0.
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KTC3875
KTA1504.
270Hz
KTA1504
KTC3875
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