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    27015P Search Results

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    27015P Price and Stock

    Reliance North America WJ10-27.0-15P-13-RNA

    15 position PCB push-in spring c
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    DigiKey WJ10-27.0-15P-13-RNA Ammo Pack 50 50
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    • 100 $222.12
    • 1000 $177.7
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    Reliance North America WJ10C-27.0-15P-13-RNA

    15 position PCB push-in spring c
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey WJ10C-27.0-15P-13-RNA Ammo Pack 50 50
    • 1 -
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    • 100 $222.12
    • 1000 $177.7
    • 10000 $171.46
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    Reliance North America WJ10L-27.0-15P-13-RNA

    15 position PCB push-in spring c
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey WJ10L-27.0-15P-13-RNA Ammo Pack 50 50
    • 1 -
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    • 100 $222.12
    • 1000 $177.7
    • 10000 $171.46
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    MACOM CGH27015P

    RF MOSFET HEMT 28V 440196
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    DigiKey CGH27015P Tray 50
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    Mouser Electronics CGH27015P
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    Richardson RFPD CGH27015P 1
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    Littelfuse Inc 027015.PXPV

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    Bristol Electronics 027015.PXPV 245
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    27015P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH27015

    Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF

    CGH27015-TB

    Abstract: CGH27015 CGH27015F JESD22
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB CGH27015F JESD22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P

    STR W 5753 a

    Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019
    Text: CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P STR W 5753 a str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015F 44019

    CGH27015-TB

    Abstract: CGH27015
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB

    Untitled

    Abstract: No abstract text available
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P