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    27.5DBM ,GAAS FET Search Results

    27.5DBM ,GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation
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    27.5DBM ,GAAS FET Price and Stock

    International Rectifier IRF6607TR1

    Trans MOSFET N-CH 30V 27A 7-Pin Direct-FET MT T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRF6607TR1 10,100
    • 1 $8.46
    • 10 $8.46
    • 100 $8.46
    • 1000 $2.11
    • 10000 $1.49
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    Microchip Technology Inc TN0106N3-G

    Small Signal Field-Effect Transistor - 0.35A I(D) - 60V - 1-Element - N-Channel - Silicon - Metal-oxide Semiconductor FET - TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TN0106N3-G 3,024
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    • 1000 $0.5449
    • 10000 $0.5035
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    Microchip Technology Inc VN0106N3-G

    Small Signal Field-Effect Transistor - 0.35A I(D) - 60V - 1-Element - N-Channel - Silicon - Metal-oxide Semiconductor FET - TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com VN0106N3-G 2,050
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    • 100 $0.4627
    • 1000 $0.4183
    • 10000 $0.3798
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    Microchip Technology Inc TP2435N8-G

    P-Channel Enhancement-Mode Vertical DMOS FET - -350V - 15 ohm - 3-lead SOT-89 - Tape&Reel - RoHS compliant
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TP2435N8-G 2,000
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    • 1000 $1.29
    • 10000 $0.86
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    Microchip Technology Inc TN2540N3

    N-Channel Enhancement-Mode Vertical DMOS FET - 400V Vdss - 175mA (Id) @ 25°C - 12Ohm @ 500mA, 10V Rds On (Max) @ Id, Vgs - TO-92-3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TN2540N3 11
    • 1 $0.686
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    • 100 $0.556
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    Find more 27.5DBM ,GAAS FET price and stock on Findchips.com

    27.5DBM ,GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MGF2415

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz


    Original     		MGF2415A MGF2415A, 150mA MGF2415 PDF

    MGF2415A

    Abstract: MGF2430A
    Text: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz


    Original     		MGF2415A MGF2415A, 150mA MGF2415A MGF2430A PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 27.5dBm • Broad Band: 6.4 to 7.2GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		FLM6472-6F -46dBc 50ohm FLM6472-6F 25deg PDF

    FLM7179-6F

    Abstract: No abstract text available
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7179-6F -46dBc FLM7179-6F FCSI0598M200 PDF

    417-116

    Abstract: FLM5964-6F
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM5964-6F -46dBc FLM5964-6F FCSI0598M200 417-116 PDF

    FLM7785-6F

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7785-6F -46dBc FLM7785-6F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM7179-6F -46dBc FLM7179-6F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM6472-6F -46dBc FLM6472-6F FCSI0598M200 PDF

    FLM6472-6F

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-6F -46dBc FLM6472-6F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM5964-6F -46dBc FLM5964-6F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM7785-6F -46dBc FLM7785-6F FCSI0598M200 PDF

    417-116

    Abstract: FLM5964-6F 26dBm
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM5964-6F -46dBc FLM5964-6F 417-116 26dBm PDF

    Ocean 477

    Abstract: FET transistors with s-parameters FLM7179-6F
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7179-6F -46dBc FLM7179-6F Ocean 477 FET transistors with s-parameters PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7785-6F -46dBc FLM7785-6F Voltage88 PDF

    FLM5964-6F

    Abstract: No abstract text available
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM5964-6F -46dBc FLM5964-6F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-6F -46dBc FLM6472-6F PDF

    FLM6472-6F

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-6F -46dBc FLM6472-6F FCSI0598M200 PDF

    FLM7785-6F

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7785-6F -46dBc FLM7785-6F PDF

    fujitsu gaas fet

    Abstract: FLM7785-6F
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7785-6F -46dBc FLM7785-6F fujitsu gaas fet PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-6F -46dBc FLM5964-6F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm


    OCR Scan     		FLM6472-6F -46dBc FLM6472-6F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: riadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM7785-6F -46dBc FLM7785-6F FCSI0598M200 PDF

    cq 838

    Abstract: FLM7179-6F CQ 539
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		-46dBc FLM7179-6F FLM7179-6F FCSI0598M200 cq 838 CQ 539 PDF

    M 1661 S

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power


    OCR Scan     		MGFC2415A MGFC2400 150mA M 1661 S PDF