Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF Line 128-Channel 860 MHz CATV Line Extender Amplifier MHW8272 • Specified for 128–Channel Performance • Broadband Power Gain @ f = 40 – 860 MHz Gp = 27 dB (Typ) 27 dB GAIN 860 MHz 128–CHANNEL CATV AMPLIFIER • Broadband Noise Figure
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MHW8272/D
MHW8272
860ver,
MHW8272
MHW8272/D
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CTB128
Abstract: MHW8272 XMD128
Text: MOTOROLA Order this document by MHW8272/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel 860 MHz CATV Line Extender Amplifier MHW8272 • Specified for 128–Channel Performance • Broadband Power Gain @ f = 40 – 860 MHz Gp = 27 dB (Typ) 27 dB GAIN
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MHW8272/D
128-Channel
MHW8272
MHW8272/D*
CTB128
MHW8272
XMD128
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW7272/D SEMICONDUCTOR TECHNICAL DATA The RF Line 110-Channel 750 MHz CATV Line Extender Amplifier MHW7272 • Specified for 110–Channel Performance • Broadband Power Gain @ f = 40 – 750 MHz Gp = 27 dB (Typ) 27 dB GAIN
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MHW7272/D
110-Channel
MHW7272
MHW7272/D*
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Untitled
Abstract: No abstract text available
Text: MOTOROLA MHW6272 • Specified for 60– and 77–Channel Performance • Broadband Power Gain @ f = 40 – 550 MHz Gp = 27 dB Typ 27 dB GAIN 550 MHz 77–CHANNEL CATV AMPLIFIER • Broadband Noise Figure NF = 6 dB (Typ) @ 550 MHz • Superior Gain, Return Loss and DC Current Stability with Temperature
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MHW6272/D
MHW6272
MHW6272
MHW6272/D
22SEP01
22MAR02
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Untitled
Abstract: No abstract text available
Text: SPA-180-27-002-SMA DATA SHEET 500 MHz to 18 GHz, Medium Power Broadband Amplifier with 23 dBm, 27 dB Gain and SMA SPA-180-27-002-SMA is a broadband GaAs PHEMT MMIC-based coaxial power amplifier, operating in the 0.5 to 18 GHz frequency range. The amplifier offers 23
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SPA-180-27-002-SMA
SPA-180-27-002-SMA
12Volts,
330mA)
-broadband-amplifier-spa-180-27-002-sma-p
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2.1 channel amplifier ckt
Abstract: 4000 watts power amplifier circuit diagram CGB8001 CGB8001-SC CGB8001-SC-0G00 CGB8001-SC-0G0T PB-CGB8001-SC-00A0
Text: DC-2.8 GHz InGaP HBT 0.5W Medium Power Amplifier October 2008 - Rev 06-Oct-08 CGB8001-SC Features Functional Block Diagram SOT-89 18 dBm Linear Power @ 2140 MHz 15.5 dB Gain @ 2140 MHz 12 dB Gain @ 2700 MHz 27 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature
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06-Oct-08
CGB8001-SC
OT-89
2.1 channel amplifier ckt
4000 watts power amplifier circuit diagram
CGB8001
CGB8001-SC
CGB8001-SC-0G00
CGB8001-SC-0G0T
PB-CGB8001-SC-00A0
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier
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M3D252
BGD702
OT115J
613518/07/pp10
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BGD702
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier
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M3D252
BGD702
OT115J
613518/07/pp10
BGD702
DIN45004B
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BGD702
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier
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M3D252
BGD702
OT115J
SCA73
613518/07/pp12
BGD702
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Untitled
Abstract: No abstract text available
Text: Ultra-Small Ceramic QCN-27+ QCN-27 Power Splitter/Combiner 2 Way-90° 50Ω 1700 to 2700 MHz Maximum Ratings CASE STYLE: FV1206-1 Model Price QCN-27+ $3.95 QCN-27 $3.95 QCN-27D+ $4.45 QCN-27D $4.45 Features Operating Temperature -55°C to 100°C Storage Temperature
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QCN-27+
QCN-27
FV1206-1
QCN-27D+
QCN-27D
POTB-255
PL-131)
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Untitled
Abstract: No abstract text available
Text: Ultra-Small Ceramic QCN-27+ QCN-27 Power Splitter/Combiner 2 Way-90° 50Ω 1700 to 2700 MHz Maximum Ratings CASE STYLE: FV1206-1 Model Price QCN-27+ $3.95 QCN-27 $3.95 QCN-27D+ $4.45 QCN-27D $4.45 Features Operating Temperature -55°C to 100°C Storage Temperature
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Way-90°
QCN-27+
QCN-27
FV1206-1
QCN-27D+
QCN-27D
PO255
PL-131)
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Untitled
Abstract: No abstract text available
Text: 1 Watt P1dB, 20 MHz to 3 GHz, Medium Power Amplifier, 27 dB Gain, 39 dBm IP3, SMA TECHNICAL DATA SHEET PE15A4017 PE15A4017 is a broadband multi-octave RF 1W power amplifier, operating in the 20 MHz to 3 GHz frequency range. The amplifier offers 30 dBm of P1dB and 27 dB small signal gain, with the excellent gain flatness of ±1.0 dB max, along with an
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PE15A4017
PE15A4017
ier-27-db-gain-39-dbm-ip3-sma-pe15a4017-p
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PA1153
Abstract: No abstract text available
Text: PA1153 1800 -2000 MHz. Low Noise Linear Power Amplifier Features typical values Low Noise .1.0 dB. High IP3 . 45 dBm. High Gain . 27 dB.
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PA1153
15dBm.
PA1153
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GP 821
Abstract: UTC 1316 cd 14106 UTC 1316 amplifier
Text: Q UTO/UTC 561 Series Thin-Film Cascadable Amplifier 10 to 500 MHz avan tek FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • High Output Power: +27 dBm Typ • Temperature Compensated • IF/RF Amplification • Power Output Stage DESCRIPTION
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CGB8001-SC
Abstract: CGB8001-SC-0G00 CGB8001-SC-0G0T PB-CGB8001-SC-00A0
Text: DC-2.7 GHz InGaP HBT Matched Gain Block Amplifier January 2008 - Rev 18-Jan-08 CGB8001-SC Features Functional Block Diagram SOT-89 18 dBm Linear Power @ 2140 MHz 15.5 dB Gain @ 2140 MHz 12 dB Gain @ 2700 MHz 27 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature
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18-Jan-08
CGB8001-SC
OT-89
CGB8001-SC
CGB8001-SC-0G00
CGB8001-SC-0G0T
PB-CGB8001-SC-00A0
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CGB8001-SC
Abstract: No abstract text available
Text: DC-2.8 GHz InGaP HBT Matched Gain Block Amplifier July 2008 - Rev 16-Jul-08 CGB8001-SC Features Functional Block Diagram SOT-89 18 dBm Linear Power @ 2140 MHz 15.5 dB Gain @ 2140 MHz 12 dB Gain @ 2700 MHz 27 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature
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16-Jul-08
CGB8001-SC
OT-89
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Untitled
Abstract: No abstract text available
Text: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ ±10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System
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AWB7228
AWB7228
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ACRIAN
Abstract: acrian inc BAM20 BAM20-2 VAM80 acrian B
Text: GENERAL BAM20 DESCRIPTION 20 WATTS - 27 VOLTS 100-150 MHz.,-. This device is specifically designed for operation in VHF AM power amplifier applications covering the range 100 to 150 MHz. The device incorporates Nichrome resistor stabilization, and provides superior
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01fl2TÃ
M20r2T;
4-40pf
2-25pf
C7-10uf
ACRIAN
acrian inc
BAM20
BAM20-2
VAM80
acrian B
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65112-84LF: Linear Power Amplifier Driver, 0.5 W 400–2300 MHz Features ● ● ● ● ● Functional Block Diagram Wideband: 400–2300 MHz High linearity: OIP3 > 39 dBm; P1 dB > 27 dBm @ 940 MHz High gain > 18 dB Single DC supply: 5 V
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SKY65112-84LF:
450/750/850/900MHz
SKY65112
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SKY65112-84LF
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65112-84LF: Linear Power Amplifier Driver, 0.5 W 400–2300 MHz Features ● ● ● ● ● Functional Block Diagram Wideband: 400–2300 MHz High linearity: OIP3 > 39 dBm; P1 dB > 27 dBm @ 940 MHz High gain > 18 dB Single DC supply: 5 V
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SKY65112-84LF:
450/750/850/900MHz
SKY65112
SKY65112-84LF
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AWB7228
Abstract: No abstract text available
Text: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System
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AWB7228
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AWB7228P8
Abstract: K 2545 transistor
Text: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System
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AWB7228
AWB7228
AWB7228P8
K 2545 transistor
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ETM1
Abstract: AWB7228
Text: AWB7228 2.62-2.69 GHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System
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AWB7228
AWB7228
ETM1
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Untitled
Abstract: No abstract text available
Text: ASX415 250 ~ 4000 MHz MMIC Amplifier 4 Features Description 14 dB Gain at 2000 MHz 27 dBm P1dB at 2000 MHz 42 dBm OIP3 at 2000 MHz ACLR @ WCDMA 4FA: -51 dBc @ Pout = +13 dBm, +/- 5 MHz offset MTTF > 100 Years Single Supply The ASX415, a power amplifier MMIC, has a high
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