STP78N75F4
Abstract: STD78N75F4 MJ 5015
Text: STD78N75F4 STP78N75F4 N-channel 75 V, 0.0092 Ω, 78 A TO-220, DPAK STripFET DeepGATE™ Power MOSFET Features • Type VDSS RDS on max ID STD78N75F4 75 V < 0.011 Ω 70 A STP78N75F4 75 V < 0.011 Ω 78 A 3 N-channel enhancement mode ■ 100% avalanched rated
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STD78N75F4
STP78N75F4
O-220,
O-220
STP78N75F4
STD78N75F4
MJ 5015
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Numonyx M25P128
Abstract: M25P128 so16 M25P128 VDFPN8
Text: M25P128 128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface Features 128-Mbit flash memory 2.7 to 3.6 V single supply voltage SPI bus compatible serial interface 54 MHz clock rate maximum for 65 nm devices VDFPN8 (ME) 8 x 6 mm (MLP8)
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M25P128
128-Mbit,
54-MHz
128-Mbit
2018h)
20-year
Numonyx M25P128
M25P128 so16
M25P128 VDFPN8
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UM0856
Abstract: PWM generation STM8s stm8s pwm pwm example sTM8s stm8s STM8S-DISCOVERY rev counter UM0834 pwm schematic UM0817
Text: UM0856 User manual Generating PWM signals using STM8S-DISCOVERY Application overview This application user manual provides a short description of how to use the Timer 2 peripheral TIM2 to generate 3 PWM signals. Reference documents • STM8S-DISCOVERY evaluation board user manual (UM0817).
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UM0856
UM0817)
UM0834)
UM0856
PWM generation STM8s
stm8s pwm
pwm example sTM8s
stm8s
STM8S-DISCOVERY
rev counter
UM0834
pwm schematic
UM0817
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14NM50N
Abstract: STD14NM50N TL 139 H 48-1-A G 0275B0 STF14NM50N Part Marking TO-220 STMicroelectronics STB14NM50N STP14NM50N 14NM50N MOSFET
Text: STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.246 Ω, 12 A MDmesh II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Preliminary data Features VDSS @ TJmax Type STB14NM50N STD14NM50N STF14NM50N STP14NM50N RDS on max ID 3 1 3 DPAK 550 V
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STB14NM50N,
STD14NM50N
STF14NM50N,
STP14NM50N
O-220
O-220FP
STB14NM50N
STF14NM50N
14NM50N
STD14NM50N
TL 139
H 48-1-A G
0275B0
STF14NM50N
Part Marking TO-220 STMicroelectronics
STB14NM50N
STP14NM50N
14NM50N MOSFET
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SCS400SDF
Abstract: Small Signal Schottky
Text: SCS400SDF VOLTAGE 40 V, 0.5 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS400SDF is high frequency rectification for switching power supply.
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SCS400SDF
OT-323
SCS400SDF
500mA
26-Nov-2009
Small Signal Schottky
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SCS401SDF
Abstract: Small Signal Schottky
Text: SCS401SDF VOLTAGE 30 V, 0.2 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS401SDF is high frequency rectification for switching power supply.
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SCS401SDF
OT-323
SCS401SDF
200mA
26-Nov-2009
Small Signal Schottky
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D12NF
Abstract: D12N STD12NF06 STD12NF06T4 STD12NF06T4-1 STD12NF06T4T4 d12nf06
Text: STD12NF06 STD12NF06T4 N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET II Power MOSFET Features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06T4 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK Applications
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STD12NF06
STD12NF06T4
D12NF
D12N
STD12NF06
STD12NF06T4
STD12NF06T4-1
STD12NF06T4T4
d12nf06
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Untitled
Abstract: No abstract text available
Text: STF14NM50N, STI14NM50N, STP14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages Datasheet - production data Features Order codes 2 STI14NM50N TO-220FP TAB RDS on max ID 550 V 0.32 Ω 12 A STF14NM50N
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STF14NM50N,
STI14NM50N,
STP14NM50N
O-220FP,
O-220
STI14NM50N
O-220FP
STF14NM50N
O-220
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14NM50N
Abstract: 14nm5 STF14NM50N STD14NM50N STP14NM50N 14nm50 14NM50N MOSFET 16832 STB14NM50N
Text: STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.28 Ω, 12 A MDmeshTM II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Features VDSS @ TJmax Type STB14NM50N STD14NM50N STF14NM50N STP14NM50N RDS on max ID 3 1 3 DPAK 550 V < 0.32 Ω •
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STB14NM50N,
STD14NM50N
STF14NM50N,
STP14NM50N
O-220
O-220FP
STB14NM50N
STF14NM50N
14NM50N
14nm5
STF14NM50N
STD14NM50N
STP14NM50N
14nm50
14NM50N MOSFET
16832
STB14NM50N
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bq27500
Abstract: bq27500-V130 NTC 10K 3435 table ntc 103at
Text: bq27500-V130 System-Side Impedance Track Fuel Gauge www.ti.com SLUS914 – OCTOBER 2009 1 INTRODUCTION 1.1 FEATURES 1.2 • • • • • • • • • • • • Battery Fuel Gauge for 1-Series Li-Ion Applications Resides on System Main Board – Works With Embedded or Removable
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bq27500-V130
SLUS914
bq27500
NTC 10K 3435 table
ntc 103at
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P14NM50
Abstract: 14NM50N MOSFET 14NM50N 14nm5 STD14NM50N
Text: STB14NM50N, STD14NM50N, STF14NM50N, STI14NM50N, STP14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages Datasheet − production data Features TAB VDSS @ TJmax Type STB14NM50N STD14NM50N
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STB14NM50N,
STD14NM50N,
STF14NM50N,
STI14NM50N,
STP14NM50N
O-220FP,
O-220
STB14NM50N
STD14NM50N
STF14NM50N
P14NM50
14NM50N MOSFET
14NM50N
14nm5
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SCS411SDF
Abstract: Small Signal Schottky
Text: SCS411SDF VOLTAGE 40 V, 0.5 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS411SDF is designed for low power rectification. 3 3 C B Top View
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SCS411SDF
OT-323
SCS411SDF
26-Nov-2009
500mA
Small Signal Schottky
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SCS421SDF
Abstract: Small Signal Schottky
Text: SCS421SDF VOLTAGE 40 V, 0.1 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS421SDF is designed for low power rectification. 3 3 C B Top View
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SCS421SDF
OT-323
SCS421SDF
26-Nov-2009
100mA
Small Signal Schottky
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SCS402SDF
Abstract: Small Signal Schottky
Text: SCS402SDF VOLTAGE 30 V, 0.3 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS402SDF is high frequency rectification for switching power supply.
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SCS402SDF
OT-323
SCS402SDF
300mA
26-Nov-2009
Small Signal Schottky
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ST10F296
Abstract: EmbAlgo TTCAN st10f296 boot ST10 C_CAN st10 Bootstrap
Text: ST10F296E Errata sheet 16-bit MCU with 832 Kbyte Flash and 68 Kbyte RAM memories Introduction This errata sheet describes all the functional and electrical problems known in the ABG and ACG silicon version of the ST10F296E. The major revision of the device can be read in the IDCHIP register @F07Ch which is set
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ST10F296E
16-bit
ST10F296E.
F07Ch)
1281h
ST10F296E
UM0854
ST10F296
EmbAlgo
TTCAN
st10f296 boot
ST10
C_CAN
st10 Bootstrap
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC GP R 1G H T S R E S E RV E D. REV 1S I O N S DIST 00 P LTR DESCRIPTION DATE 26NOV2009 REV PER E C R - 0 9 - 0 2 5 9 2 0
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OCR Scan
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26NOV2009
ECR-09-025920
AUG2006
20MAY2005
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalten/ M l rights reserved 2 A 3 4 5 6 31.09 max. • 1i - o0. o s PCB Layout, component side thickness 1.6 mm min. _ 2,76 Ma t i n g f a c e a c c o r d i n g t o CECC 7 5 3 0 1 - 8 0 2 Nut t h r e a d — Max . Temper at ur e 09551663812.741
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Apr20
30Aug2010
EC02316
26Nov2009
22Aug2007
2Apr20
Jan200
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 4 5 6 20,1 16,6 31 max . A 1,2 5,52 | 0 .05 02,1 -0.05 n S ! J 1 CM ro IL 3,85 2,89. 16, 5 PCB Layout, component side (thickness 1.6 mm min. _ Mating face acccording to CECC 75301-802 1— !- O O.IO All contacts
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28Aug2009
UJan2010
EC01215
EC00775
81-2-A
09551563619J41
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 4 5 6 20,1 16, 6 31 max. A 1,2 5,52 | 0.05 Pv H to CM to 0 2 , 1 - 0.05 3,85 2,89 16,6 Mating face acccording to CECC 75301-802 PCB Layout, component side thickness 1.6 mm min. m. 1— r> O 20 0.10 All contacts
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OCR Scan
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PDF
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EC01215
14Jan2010
18Feb2008
13Jul2007
81-2-A
26Nov2009
31Aug2007
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Untitled
Abstract: No abstract text available
Text: Alle Hechte Vorbehalten/ HU rights tesim i Alle Hechte Vorbehalten/ Ml rights resemi 4 F i r s t 10 p c s A Se e TB 09 55 166 x 81 x f o l i o 1/ 2 for connector dimensions an d PCB l a y o u t P a c k a g i n g in a c c o r d a n c e w i t h EIA 481-2-A 09551663812.7
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81-2-A
EC01199
11Jan2010
26Nov2009
22Aug2007
02Apr2007
25Jan2007
17Jul2006
EC01118
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalten/ M l rights reserved 2 A 3 4 5 6 CM 31,09 max. CO oo in m m 3,85 2,55 oo 16,6 PCB Layout, component side thickness 1.6 mm min. 2,76 Mat i ng f ace a c c o r d i n g t o CECC 75301-802 Unremovabl e screwlocks — to -1- dT—
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EC02316
30Aug2010
26Nov2009
EC00775
28Aug2009
11Jan2010
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalten/ M l rights reserved 2 3 4 5 6 31 max. CM A CO 02,1 oo in /r m m - 0.05 l 3,85 X o E oo 2,55 16,6 PCB Layout, component side thickness 1.6 mm min, Unremovable screwlocks 2,76 Mating face a cccording t o CECC 7 5 3 0 1 - 8 0 2 13,75 max.
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PDF
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EC02316
g2010
11Jan2010
28Aug2009
26Nov2009
EC00775
EC01199
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 1 ,0 9 max. - A 3 -t=»- csj co 4 5 6 x o E oo H— l i _1_ H— 1r □ [D □ ro y=L j= y Mat i ng f ace a c c o r d i n g t o CECC 75301-802 2,76 PCB L a y o u t , component s i d e t h i c k n e s s 1. 6 mm mi n.
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28Aug2009
EC01215
EC00775
81-2-A
ECD1118
E100775
26Nov2009
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 4 5 6 31 max. A Pv H to CM to 3,85 2,89 16,6 Mating face acccording to CECC 75301-802 PCB Layout, component side thickness 1.6 mm min. IQ l £ 7 O. IO 2$ 7,2 All contacts and grounds 4-40 UNC unremovable screwlock
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28Aug2009
14Jan2010
EC01215
EC00775
81-2-A
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