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Philips Semiconductors 266CT125-3E2A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	266CT125-3E2A		16			1 $3.96 10 $2.475 100 $2.475 1000 $2.475 10000 $2.475	Buy Now

266CT125 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
266ct125 Abstract: 266CT CBW196 4900 3E27 3C81 3E25 ring ferrite core Text: Philips Components Product specification TC9.5/4.8/3.2 266CT125 Ferrite ring cores (toroids) RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE Σ(I/A) core factor (C1) 2.89 mm−1 Ve effective volume 148 mm3 Ie effective length 20.7 mm	Original	PDF	266CT125) CBW196 2-3C81 2-3E27 2-3E25 266ct125 266CT CBW196 4900 3E27 3C81 3E25 ring ferrite core
266CT125-3E2A Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit	Original	PDF	AN-937 500ns/div 266CT125-3E2A GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
GBAN-PVI-1 Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit	Original	PDF	AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
ca3103 Abstract: 2n2222 -331 Cd4093 SiHF Text: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2	Original	PDF	AN-937 ca3103 2n2222 -331 Cd4093 SiHF
HEXFET Power MOSFET designer manual Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2	Original	PDF	AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
266ct125 Abstract: 2N4199 mepco-electra 266CT 2N4199 JAN 55050A2 Text: Preliminary PS6008 HYBRID - HIGH RELIABILITY DC/DC CONVERTER DESCRIPTION FEATURES □ Continuous short circuit protection with low power dissipation □ 500V input/output isolation □ 170kHz switching technology □ Nonlatching overvoltage protection □ +5V, +15V, -15V output voltages	OCR Scan	PDF	PS6008 170kHz PS6008 MIL-STD-704D 182nd 266ct125 2N4199 mepco-electra 266CT 2N4199 JAN 55050A2
55120-A2 Abstract: 266ct125 55206-A2 55120A2 55206A2 Text: PS6009 HYBRID - HIGH RELIABILITY DC/DC CONVERTER DESCRIPTION FEATURES The PS6009 is a multiple-output DC/DC converter with 80 watts of power output. It meets or exceeds the requirements of MIL-STD-704D for a 28V DC system voltage transient range. The input voltage	OCR Scan	PDF	PS6009 PS6009 MIL-STD-704D 182nd MIL-STD-1772 55120-A2 266ct125 55206-A2 55120A2 55206A2