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    TURCK Inc RKF 126-5M/M20

    Rbc |Turck RKF 126-5M/M20
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    Newark RKF 126-5M/M20 Bulk 1
    • 1 $107.4
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    265MM2 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps

    Untitled

    Abstract: No abstract text available
    Text:  35 /,0,1$5<,1 250$7,21 /'*%* *E''56'5$0,QWHJUDWHG0RGXOH ,02' %HQHILWV )($785(6 ''56'5$0'DWD5DWH  DQG0ESV  3DFNDJH  xPP[PP(QFDSVXODWHG %DOO*ULGDUUD\ 3%*$ EDOOV PPSLWFK 9”9&RUH3RZHUVXSSO\


    Original     		PDF 265mm2 1060mm2 625mm2

    W3E32M72SR-XSBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS „ Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s „ 74% SPACE SAVINGS vs. TSOP „ Reduced part count „ Package: „ 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm


    Original     		PDF W3E32M72SR-XSBX 32Mx72 266Mb/s E32M72SR-XSBX W3E32M72SR-XSBX

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply


    Original     		PDF W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of


    Original     		PDF WEDPN16M72V-XBX 16Mx72 128MByte 864-bit 100MHz, 125MHz 100MHz

    W3E64M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF W3E64M72S-XBX 64Mx72 333Mbs 512MByte W3E64M72S-ESB W3E64M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz WEDPN4M64V-XBX 32MByte 256Mb) 100MHz

    WEDPN16M64V-XBX

    Abstract: WEDPN8M64V-XBX
    Text: WEDPN8M64V-XBX 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125, 133*MHz ■ Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing


    Original     		PDF WEDPN8M64V-XBX 8Mx64 64MByte 512Mb) 432-bit 100MHz 125MHz 133MHz* 133MHz WEDPN16M64V-XBX WEDPN8M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		PDF L9D112G80BG4 LDS-L9D112G80BG4-A

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF W3E64M72S-XSBX 64Mx72 333Mbs* 512MByte 333Mbs

    WEDPN16M72V-XBX

    Abstract: WEDPN8M72V-XBX 54TSOP WEDPN16M72-XBX
    Text: 16M x 72 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN16M72V-XBX* Designed to complement PowerPCTM 750/755 and high performance memory controllers see other side for typical application block diagram Performance Features • SDRAM CAS Latency = 3 (125MHz), 2 (100MHz) or 3 (100MHz), 2 (75MHz)


    Original     		PDF WEDPN16M72V-XBX* 125MHz) 100MHz) 75MHz) WEDPN8M72V-XBX* 755sbd WEDPN16M72-XBX MIF2004 WEDPN16M72V-XBX WEDPN8M72V-XBX 54TSOP

    W3E2M64S-XSBX

    Abstract: No abstract text available
    Text: 32M x 64 DDR SDRAM Optimum Density and Performance in One Package W3E32M64S-XSBX* The W3E2M64S-XSBX is a member if WEDC’s high density/high preformance family of Double Data Rate DDR SDRAM’s designed to support high performance processors. Product Features


    Original     		PDF W3E32M64S-XSBX* W3E2M64S-XSBX 125mm2 500mm2 286mm2 W3E32M6GS-XSBX MIF2045

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive


    Original     		PDF 8Mx72 125MHz WEDPN8M72V-XBX WEDPN8M72V-XBX 64MByte 512Mb) 100MHz 100MHz,

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W364M72V-XSBX PRELIMINARY* 64Mx72 Synchronous DRAM FEATURES BENEFITS High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 3.3V ±0.3V power supply for core and I/Os Fully Synchronous; all signals registered on positive


    Original     		PDF 64Mx72 133MHz W364M72V-XSBX W364M72V-XSBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN8M64V-XBX 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125, 133*MHz ■ Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing


    Original     		PDF 8Mx64 WEDPN8M64V-XBX WEDPN8M64V-XBX 64MByte 512Mb) 100MHz 125MHz 133MHz* 133MHz

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF 64Mx72 333Mbs* W3E64M72S-XSBX 333Mbs

    VCCQ15

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M16S-XSBX PRELIMINARY* 64Mx16 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333* „ „ Package: „ • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply


    Original     		PDF 64Mx16 512Mb W3E64M16S-XSBX VCCQ15

    7812

    Abstract: VCCQ15
    Text: White Electronic Designs W3E32M72S-XBX ADVANCED* 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF 32Mx72 266MHz Program40 W3E32M72S-ESB W3E32M72S-XBX 7812 VCCQ15

    W3E32M64S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,


    Original     		PDF W3E32M64S-XBX 32Mx64 333Mb/s 625mm2 256MByte 333Mbs W3E32M64S-XBX

    TSOP 66 Package

    Abstract: W3E32M64S-XSBX
    Text: 32M x 64 DDR SDRAM Optimum Density and Performance in One Package W3E32M64S-XSBX* The W3E32M64S-XSBX is a member of WEDC’s high density/high performance family of Double Data Rate DDR SDRAM’s designed to support high performance processors. Product Features


    Original     		PDF W3E32M64S-XSBX* W3E32M64S-XSBX MIF2045 TSOP 66 Package

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: W3E16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM FEATURES „ DDR SDRAM Rate = 200, 250, 266 „ Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ BENEFITS 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)


    Original     		PDF W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN16M64V-XB2X 16Mx64 133MHz 128MByte 864-bit

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX E1-E16
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		PDF AS4DDR16M72PBG 16Mx72 333Mbps M72-8/XT AS4DDR16M72-10/XT 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX E1-E16