rf-w3s198ts
Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
Text: Feature ◆ ◆ ◆ ◆ P/N: RF-W3S198TS-A41 Viewing angle:140 deg The materials of the LED dice is InGaP AlGaInP and InGaN 1.60mmx1.60mm×0.70mm SMT-LED RoHS compliant lead-free soldering compatible Package Outline 1 2 2 1 3 4 4 3 2 R 1(G) 3(B) 4 ATTENTION
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RF-W3S198TS-A41
004inch)
WI-E-045
rf-w3s198ts
JESD22-A101
JESD22-A103
JESD22-A108
JESD22-A119
JESD22-B106
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PDF
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RF-BUB191TS
Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106 JESD22-A104 TEST CONDITION K JESD22-A105 JESD22A105
Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-BUB191TS Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg The materials of the LED dice is InGaN 1.60mmx0.80mm×0.70mm SMT-LED RoHS compliant lead-free soldering compatible
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Original
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RF-BUB191TS
004inch)
WI--E--045
RF-BUB191TS
JESD22-A101
JESD22-A103
JESD22-A108
JESD22-A119
JESD22-B106
JESD22-A104 TEST CONDITION K
JESD22-A105
JESD22A105
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PDF
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RF-W2SA50TS-A36
Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-W2SA50TS-A36 Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg The materials of the LED dice is InGaN, InGaP and AlGaInP 5.30mmx5.00mm×1.60mm SMT-LED RoHS compliant lead-free soldering compatible
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Original
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RF-W2SA50TS-A36
012inch)
WI--E--045
RF-W2SA50TS-A36
JESD22-A101
JESD22-A103
JESD22-A108
JESD22-A119
JESD22-B106
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PDF
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Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-YURA30TS-AD Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:120 deg The materials of the LED dice is ALGaInP 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible
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RF-YURA30TS-AD
008inch)
WI--E--045
Y05003
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PDF
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RF-BNRA30TS-CD
Abstract: No abstract text available
Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-BNRA30TS-CD Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:120 deg The materials of the LED dice is InGaN 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible
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Original
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RF-BNRA30TS-CD
008inch)
WI--E--45
B05002
RF-BNRA30TS-CD
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PDF
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JESD22-A119
Abstract: RF-INRA30DS-EB JESD22-A108 JESD22-B106 JESD22-A101 JESD22-A103
Text: Feature P/N: RF-INRA30DS-EB Viewing angle:120 deg The materials of the LED dice is InGaN 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible ◆ ◆ ◆ ◆ Package Outline 2 1 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC
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Original
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RF-INRA30DS-EB
008inch)
WI-E-045
JESD22-A119
RF-INRA30DS-EB
JESD22-A108
JESD22-B106
JESD22-A101
JESD22-A103
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PDF
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JESD22-A101
Abstract: JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-W2SA30BS-A56 Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:120 deg The materials of the LED dice is InGaN, InGaP and GaAs 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible
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Original
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RF-W2SA30BS-A56
008inch)
WI--E--045
JESD22-A101
JESD22-A103
JESD22-A108
JESD22-A119
JESD22-B106
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PDF
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RF-WNFA50DS-ED
Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-WNFA50DS-ED Company Name: Confirmed By Customer: DATE: APPROVED BY: CHECKED BY: PREPARED BY: DATE: DATE: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:120 deg The materials of the LED dice is InGaN 5.30mmx5.00mm×1.60mm SMT-LED
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Original
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RF-WNFA50DS-ED
WI--E--045
RF-WNFA50DS-ED
JESD22-A101
JESD22-A103
JESD22-A108
JESD22-A119
JESD22-B106
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PDF
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RF-W2SA50TS-A39
Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
Text: Feature P/N: RF-W2SA50TS-A39 Viewing angle:140 deg The materials of the LED dice is InGaN, InGaP and AlGaInP 5.30mmx5.00mm×1.60mm SMT-LED RoHS compliant lead-free soldering compatible ◆ ◆ ◆ ◆ Package Outline polarity mark [1] [3] [5] [2] [4] [6]
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Original
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RF-W2SA50TS-A39
012inch)
WI-E-045
RF-W2SA50TS-A39
JESD22-A101
JESD22-A103
JESD22-A108
JESD22-A119
JESD22-B106
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PDF
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RF-GNB191TS-CF
Abstract: G01036 JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-GNB191TS-CF Company Name: Confirmed By Customer: DATE: APPROVED BY: DATE: 龙胜 2009-08-26 CHECKED BY: DATE: 谢栋芬 2009-08-26 PREPARED BY: DATE: 贾娟 2009-08-26 Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg
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Original
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RF-GNB191TS-CF
004inch)
WI--E--045
G01036
RF-GNB191TS-CF
G01036
JESD22-A101
JESD22-A103
JESD22-A108
JESD22-A119
JESD22-B106
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PDF
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13003
Abstract: 130030 B 13003 7103 TO-126 fairchild
Text: TO-126 Tube Packing Data TO-126 Tube Packing Configuration: Figure 1.0 Packaging Description: 60 units per Tube F 113 130030 Bubble Sheet 32 Tubes per box TO-126 parts are shipped normally in tube. The tube is made of PVC plastic treated with anti-static agent.These
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O-126
A710103105
525mm
360mm
265mm
000cap)
237mm
167mm
13003
130030
B 13003
7103
TO-126 fairchild
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PDF
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transistor code 458 055
Abstract: transistor 2001 H1 transistor code 458 Fairchild taping TO-92 2001 TO92 transistor case To 92
Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 Packaging Description: TO-92 parts are shipped normally in tape. These reeled parts in standard option are shipped with 2,000 units per 14” or 355.6cm diameter reel. This and some other options
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395mm
375mm
transistor code 458 055
transistor 2001 H1
transistor code 458
Fairchild taping TO-92
2001 TO92
transistor case To 92
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Untitled
Abstract: No abstract text available
Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count 2.5V ±0.2V core power supply Reduced I/O count
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W3E16M64S-XBX
16Mx64
266Mbps
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PDF
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Untitled
Abstract: No abstract text available
Text: 35 /,0,1$5<,1 250$7,21 / '*%* *E''56'5$0,QWHJUDWHG0RGXOH ,02' %HQHILWV )($785(6 ''56'5$0'DWD5DWH DQG0ESV 3DFNDJH xPP[PP(QFDSVXODWHG %DOO*ULGDUUD\ 3%*$ EDOOV PPSLWFK 99&RUH3RZHUVXSSO\
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265mm2
1060mm2
625mm2
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PDF
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W3E16M72S-XBX
Abstract: W3E32M72S-XBX
Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply
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W3E16M72S-XBX
16Mx72
W3E16M72S-XBX
W3E32M72S-XBX
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PDF
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of
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WEDPN16M72V-XBX
16Mx72
128MByte
864-bit
100MHz,
125MHz
100MHz
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PDF
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W3E64M72S-XBX
Abstract: No abstract text available
Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply
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W3E64M72S-XBX
64Mx72
333Mbs
512MByte
W3E64M72S-ESB
W3E64M72S-XBX
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PDF
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WEDPN4M64V-XBX
Abstract: No abstract text available
Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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WEDPN4M64V-XBX
4Mx64
125MHz
32MByte
256Mb)
216-bit
100MHz
WEDPN4M64V-XBX
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PDF
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Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
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WEDPN4M72V-XBX
4Mx72
125MHz
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M64V-XBX
8Mx64
125MHz
WEDPN8M64V-XBX
64MByte
512Mb)
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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Original
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WEDPN8M72V-XBX
8Mx72
125MHz
WEDPN8M72V-XBX
64MByte
512Mb)
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
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Original
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WEDPN4M64V-XBX
4Mx64
125MHz
WEDPN4M64V-XBX
32MByte
256Mb)
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with
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Original
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WEDPN16M72V-XBX
16Mx72
125MHz
128MByte
864-bit
100MHz
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PDF
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WEDPN4M72V-XBX
Abstract: No abstract text available
Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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Original
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WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz,
WEDPN4M72V-XBX
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PDF
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