555H
Abstract: MX29F200B MX29F200T
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
555H
MX29F200B
MX29F200T
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Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/20/1999
PM0549
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29F200T
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
29F200T
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Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0549
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555H
Abstract: MX29F200B MX29F200T
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0549
JUN/15/2001
555H
MX29F200B
MX29F200T
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Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
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Untitled
Abstract: No abstract text available
Text: MX29F200C T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 70/90ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200C
256Kx8/128Kx16]
131072x16/262144x8
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
eras25
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29F200
Abstract: MX29F200CT 555H
Text: MX29F200C T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90ns Compatible with MX29F200T/B device Low power consumption
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MX29F200C
256Kx8/128Kx16]
131072x16/262144x8
55/70/90ns
MX29F200T/B
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
detecti4/2005
29F200
MX29F200CT
555H
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555H
Abstract: MX29F200B MX29F200T
Text: ADVANCED INFORMATION MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/20/1999
PM0549
555H
MX29F200B
MX29F200T
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Untitled
Abstract: No abstract text available
Text: INDEX ADVANCED INFORMATION MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 70/90/120ns Low power consumption - 30mA maximum active current
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
70/90/120ns
7us/14us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0549
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29F200C T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 70/90ns Compatible with MX29F200T/B device
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MX29F200C
256Kx8/128Kx16]
131072x16/262144x8
70/90ns
MX29F200T/B
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM1250
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Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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PDF
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/20/1999
PM0549
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Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/20/1999
PM0549
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BCM 4709
Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
Text: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアル ハードウェア編 16 ビット・シングルチップ・マイクロコントローラ 本資料に記載の全ての情報は本資料発行時点のものでありルネサス エレクトロニクスは、
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78K0R/Fx3
78K0R/FB3:
PD78F1804
78F1805
78F1806
78F1807
78F1804
BCM 4709
78F1830
78F1834
78f1835
78f1845
78f1826
78F1830GAA2-GAM-G
ADS TS20
PD78F1841
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HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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MARKING CODE YA
Abstract: No abstract text available
Text: european space agency agence spatiale européenne Pages 1 to 48 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 256K 262144x1 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M65697EV ESA/SCC Detail Specification No. 9301/038
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262144x1
M65697EV
MARKING CODE YA
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Untitled
Abstract: No abstract text available
Text: FU JITSU 262144X 9 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE M B85240-10 M B85240-12 D ecem b er 1 9 8 7 E d itio n 1.0 262,144 x 9 BIT CMOS STATIC COLUMN RANDOM ACCESS MEMORY This Fujitsu MB85240 is a fu lly decoded, 262,144 words x 9 bits CMOS static column random access memory composed o f nine 256k SCRAM chips
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262144X
B85240-10
B85240-12
MB85240
B85240
MB81C258;
30-LEAD
MSP-30P-P02)
M30006S-4C
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W22C
Abstract: W22C4096 262144X16
Text: AUó I« tan W22C4096 Winbond 2 5 6 K X 1 6 BITS/512KX8 BITS CMOS MASK ROM GENERAL DESCRIPTION FEATURES Active: lOOmW typ. The W22C4096 is a high speed, low power mask-programmable read-only memory organ Standby: 25^W(typ.) ized as 262144X16 bits or 524288 X 8 bits
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W22C4096
BITS/512KX8
W22C4096
262144X16
B-1930
W22C
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MB85240-12
Abstract: sp30p
Text: FU JITSU "262144X9 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE M B85240-10 M B85240-12 D ecem ber 1987 E d it io n 1.0 262,144 x 9 B IT CMOS STA TIC COLUMN RANDO M ACCESS M EM O RY This F u jits u M B 8 5 2 4 0 is a f u lly deco ded, 2 6 2 ,1 4 4 w o rd s x 9 b its CM O S
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262144X9
B85240-10
B85240-12
M3000SS-5C
MB85240-12
sp30p
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NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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NS455
Abstract: MSM534000 MSM534000RS
Text: 4bE D • O K I semiconductor MSM534000 b724240 0 K1 D0CHÖQ7 blT «O K IJ semiconductor group 262,144 WORD x 16 BIT MASK ROM GENERAL DESCRIPTION The MSM534000RS is a silicon gate CMOS device ROM w ith 262,144 words x 16 b it capacity. It operates on a 5V single power supply and all inputs and outputs are TTL compatible. The
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b724240
MSM534000_
MSM534000RS
X-46-13-15â
MSM534000.
T-46-13-15
NS455
MSM534000
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HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .
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