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    25V 1A MOSFET Search Results

    25V 1A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3991-ZK-E1-AY Renesas Electronics Corporation Nch Single Power Mosfet 25V 30A 13.0Mohm Mp-3Zk/To-252 Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    25V 1A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HIP1030

    Abstract: HIP1030AS
    Text: HIP1030 S E M I C O N D U C T O R 1A High Side Driver with Overload Protection December 1994 Features Description o o • Over Operating Temperature Range -40 C to +125 C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range


    Original     		PDF HIP1030 HIP1030 1-800-4-HARRIS HIP1030AS

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT789A 25V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -25V IC = -3A high Continuous Current Low saturation voltage VCE sat < -250mV @ -1A


    Original     		PDF FZT789A OT223 -250mV FZT689B AEC-Q101 OT223 J-STD-020 DS33168

    C3225X5R1C476M

    Abstract: SMD Transistor 070 R AC adapter 19V liteon smd transistor ea 1P smd transistor transistor smd 12p transistor 12p smd schematic liteon adapter notebook EA Q4 SMD transistor transistor panasonic vertical preset 10k
    Text: ISL85001EVAL1Z: 1A Regulator Standard Buck PWM Application Note December 1, 2008 AN1443.0 Description Recommended Equipment The ISL85001EVAL1Z REV A kit is intended for use by individuals with requirements for Point-of-Load applications sourcing from 4.5V to 25V. The ISL85001EVAL1Z evaluation


    Original     		PDF ISL85001EVAL1Z: AN1443 ISL85001EVAL1Z ISL85001 425in2 ISL85001EVAL1Z C3225X5R1C476M SMD Transistor 070 R AC adapter 19V liteon smd transistor ea 1P smd transistor transistor smd 12p transistor 12p smd schematic liteon adapter notebook EA Q4 SMD transistor transistor panasonic vertical preset 10k

    ZXTN649FTA

    Abstract: zxtn649 T-23 ZXTN649F ZXTP749F
    Text: A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data BVCEO > 25V BVCBO > 35V IC(cont) = 3A Continuous Currrent VCE(sat) < 120mV @ 1A RCE(sat) = 77 mΩ


    Original     		PDF ZXTN649F 120mV ZXTP749F OT-23 J-STD-020 DS31900 ZXTN649FTA zxtn649 T-23 ZXTN649F ZXTP749F

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E s a t TRANSISTOR IN SO T-23 Mechanical Data Features • • • • • • • • • • • BVCEO > 25V BVCBO > 35V IC(cont) = 3A Continuous Currrent VCE(sat) < 120mV @ 1A RCE(sat) = 77 mΩ


    Original     		PDF ZXTN649F 120mV ZXTP749F OT-23 J-STD-020 DS31900

    ZXTP749FTA

    Abstract: sot-23 Marking 1N8 T-23 ZXTN649F ZXTP749F marking mv sot23 n channel mosfet 1N8 transistor sot23 zxtp749 t-23 p channel mosfet
    Text: A Product Line of Diodes Incorporated ZXTP749F P N P L O W V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data • • • • • • BVCEO > -25V BVCBO > -35V IC(cont) = -3A Continuous Currrent VCE(sat) < -150mV @ -1A


    Original     		PDF ZXTP749F -150mV ZXTN649F OT-23 J-STD-020 DS31901 ZXTP749FTA sot-23 Marking 1N8 T-23 ZXTN649F ZXTP749F marking mv sot23 n channel mosfet 1N8 transistor sot23 zxtp749 t-23 p channel mosfet

    transistor T23

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP749F P N P L O W V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data • • • • • • BVCEO > -25V BVCBO > -35V IC(cont) = -3A Continuous Currrent VCE(sat) < -150mV @ -1A


    Original     		PDF ZXTP749F -150mV ZXTN649F OT-23 J-STD-020 DS31901 transistor T23

    IR7303

    Abstract: electrolytic capacitor 1uF 25v 220uf, 25v electrolytic capacitor 220uf/25V capacitor c1 220uF CDRH127-330 SI9936 resistor 330 Ohm capacitor 1uF 25V 220uF, 25V
    Text: TFT Monitor 10V to 20V INPUT C2 1uF 10V 9 R1 20k 2 D1 CMPSH-3 16 VP 15 VL BST ILIM COMP DH C1 27nF 14 13 12 LX DL VL GND C4 220uF 25V HC 11 C3 0.1uF R3 10 R4 10 OUT 1 POK 10 FB2 B3 C11 220uF 10V MV-AX R5 30.9k C6 4.7nF B2 5V@1A 3 4 FB 127-330 N1 1/2 Si9936


    Original     		PDF 220uF Si9936 MAX1864T 200mVpp 100mVpp LMK212BJ105MG 220uF 25MV220HC IR7303 electrolytic capacitor 1uF 25v 220uf, 25v electrolytic capacitor 220uf/25V capacitor c1 220uF CDRH127-330 SI9936 resistor 330 Ohm capacitor 1uF 25V 220uF, 25V

    VN0109N5

    Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109
    Text: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an


    Original     		PDF AN-D15 VN0104/VN0106/VN0109 VN0104 VN0106 VN0109 VN0109N5 VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109

    SOP8 Package

    Abstract: No abstract text available
    Text: WTK6679 Surface Mount P-Channel Enhancement Mode MOSFET 7 -14 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<10mΩ@VGS = -10V * RDS(ON)<13mΩ@VGS = -4.5V


    Original     		PDF WTK6679 WTK6679 300us, 03-May-07 SOP8 Package

    Untitled

    Abstract: No abstract text available
    Text: WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -60 VOLTAGE 1 GATE Features: 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE * Super high dense cell design for low RDS(ON)


    Original     		PDF WTN9575 OT-223 18-Jul-07 OT-223

    IN4007

    Abstract: SD4843P SD4843 IN4007 DC IN4007 5A sd484 222M 1kv SD484X SD484XP67K65 SA431A
    Text: SD484XP67K65 EKSD484XP67K65_01_V1.4 SD484X P67K65 85 265V 15W SD484XP67K65_AN01 EK01_V1.4 7.2W 12W 14W 18W 80 SD484XP67K65 PWM 650V MOSFET SD484XP67K65 MOSFET 16.8 4.8 9.6 6.0 3.6 0.6 A 0.75 A 0.90 A 1.20 A 1.50A 68x35.5×1.5 mm3 EKSD484XP_01_V1.4 SD484XP67K65


    Original     		PDF SD484XP67K65 EKSD484XP67K65 SD484X P67K65 SD484XP67K65 EKSD484XP SD4843P67K65 IN4007 SD4843P SD4843 IN4007 DC IN4007 5A sd484 222M 1kv SD484X SA431A

    27BSC

    Abstract: marking 62m
    Text: WTK9410 6 5 D 4 D G 7 3 D S 8 S 2 D S P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)


    Original     		PDF WTK9410 300us, 12-Mar-07 27BSC 27BSC marking 62m

    27BSC

    Abstract: marking 62m
    Text: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)


    Original     		PDF WTK9410 300us, 12-Mar-07 27BSC 27BSC marking 62m

    Untitled

    Abstract: No abstract text available
    Text: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)


    Original     		PDF 2N7336 IRFG6110

    Untitled

    Abstract: No abstract text available
    Text: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3974-01L

    AP2318GEN

    Abstract: No abstract text available
    Text: AP2318GEN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Small outline package ▼ RoHS Compliant BVDSS 30V RDS ON 720mΩ ID 1A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP2318GEN OT-23 OT-23 100ms AP2318GEN

    Untitled

    Abstract: No abstract text available
    Text: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3974-01L

    HIP1030AS

    Abstract: igbt driver
    Text: 39 HIP1030 PRELIMINARY Apni 1994 1A High Side Driver with Overload Protection Description Features • Over Operating Temperature Range -40°C to +125°C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range • Over-Voltage Shutdown Protected


    OCR Scan     		PDF HIP1030 HIP1030 HIP1030AS igbt driver

    Untitled

    Abstract: No abstract text available
    Text: S HIP 1030 ADVANCE INFORMATION 1A High Side Driver With Over-Load Protection May !992 Features Description • Over Operating Range: -40°C to +125°C - 1V Max at 1A Saturation Voltage - 1A Current Switching Capability - 4.5V to 25V Power Supply Range The HIP1030 is a Power Integrated Circuit designed as a


    OCR Scan     		PDF HIP1030

    P-channel Dual MOSFET VGS -25V

    Abstract: b 1624 transistor P-channel MOSFET VGS -25V
    Text: 0 OPTEK Product Bulletin HCT802 May 1993 Dual Enhancement Mode MOSFET Type HCT802 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V


    OCR Scan     		PDF HCT802 HCT802 P-channel Dual MOSFET VGS -25V b 1624 transistor P-channel MOSFET VGS -25V

    Untitled

    Abstract: No abstract text available
    Text: @.OBIEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package • V ds = 90V • lD o n N-Channel = 1.9A P-Channel = 0.5A • Two devices selected for V ds, switching time, and capacitance


    OCR Scan     		PDF HCT801 HCT801 250mA

    HCT801

    Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185
    Text: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V


    OCR Scan     		PDF HCT801 HCT801 000E345 HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185

    HCT801TX

    Abstract: Dual Enhancement Mode MOSFET
    Text: 0 OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source


    OCR Scan     		PDF HCT801 HCT801 VN0109 D00S34S HCT801TX Dual Enhancement Mode MOSFET