MTD7N20
Abstract: jw 521
Text: MOTOROLA SC XSTRS/R F EbE D b3b?5S4 GQIGISO 2 Order this data sheet by MTD7N20/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet MTD7N20 P o w e r Field E ffe c t T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S
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MTD7N20/D
TD7N20
MTD7N20
jw 521
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CNY31
Abstract: No abstract text available
Text: E SOLID. STATE Dl De | 3075DÔ1 001^334 fl | Optoelectronic Specifications Photon Coupled Isolator CNY31 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State CNY31 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-darlington amplifier in a low-cost
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--m-95
CNY31
CNY31
67mW/Â
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Untitled
Abstract: No abstract text available
Text: S G S-THOPISON 07E D | V ^ a a ? OOlbBMû t. I LOW POWER SCHOTTKY T54LS379 T74LS379 INTEGRATED CIRCUITS 67C 16477 D £T — QUAD PARALLEL REGISTER WITH ENABLE DESCRIPTION The T54LS379/T74LS379 is a 4-Bit Register with buffered common Enable* This device is similar to
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T54LS379
T74LS379
T54LS379/T74LS379
T54LS/T74LS175
T74LS379
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2sc4824
Abstract: 2SA18 2SA1850 2SC48 2SC482
Text: O rd e rin g n u m b e r: E N 4 1 3 2 2SA1850/2SC4824 PNP/NPN Epitaxial Planar Silicon Transistors High Definition CRT Display Video Output Applications Applications • High Definition CRT Display Video Output Applications, Wide-Band Amp. Features •Adoption of FBET process.
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EN4132
2SA1850/2SC4824
400MHz)
2SA1850
25tlC
2sc4824
2SA18
2SA1850
2SC48
2SC482
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m072
Abstract: 66072
Text: MICROPAC INDUSTRIES INC 1SE D bl l S b M G 0000Li30 fl 66072 DUAL-CHANNEL, VERY HIGH SPEED, LEADLESS CHIP CARRIER OPTOCOUPLER OPTOELECTRONIC PRODUCTS DIVISION KOTE: A 01 TO O InF BYPASS CAPACITOR MUST BE CONNECTED BETWEEN PINS 15 AND 10 FEATURES: Electrically sim ilar to 6N134
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0000Li30
6N134
m072
66072
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66072
Abstract: No abstract text available
Text: MICROPAC INDUSTRIES INC 1SE D L.112L.MQ 0000U 30 66072 DUAL-CHANNEL, VERY HIGH SPEED, LEADLESS CHIP CARRIER OPTOCOUPLER fl OPTOELECTRONIC PRODUCTS DIVISION FEATURES: • Electrically similar to 6N134 • Hermetically sealed 24 Pin LCC • Very high speed • 5mHz bandwidth typical
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0000U
6N134
66072
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Tran sisto r . . designed for 24 volt UHF large-signal, comm on-base amplifier applications in indu stria l and com m ercial FM e quipm ent operating in the range of 8 0 4-9 60 MHz,
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MRF894
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2SD155
Abstract: 2SD1558
Text: I HITACHI 2 S D 1 5 5 8 , 2 S D 1 5 9 9 SILICON NPN TRIPLE DIFFUSED LOW FREQÜiwCY TOWÆR AMPLIFIER COMPLEMENTARY PAIR WITH 2S81077 1. Base X. C olkctor Flanjje y. Emitter ("Dimensions in w»ti) (JEDEC TO-220AB) • ABSOLUTE MAXIMUM RATINGS (Ta=25sO Item
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2S81077
O-220AB)
2SD1558
2SD1599
2SD1558,
2SD1599
2SD155
2SD1558
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - FEBRUARY 1996_ _ FEATURES * Low saturation voltage * Excellent hFE specified up to 2A COMPLEMENTARY TYPE - FZT653 PARTMARKING D E T A IL- FZT753 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER
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OT223
FZT653
FZT753
25tlC
-100mA*
-10mA*
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