Untitled
Abstract: No abstract text available
Text: 1N3847 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 5.0m Peak Curr. Tol.50m Total Cap. (F)25p Ip/Iv Min6.0 Vp Vv Fwd Volt @Ipeak510m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)3.0 Neg Resist. Semiconductor MaterialGermanium
|
Original
|
PDF
|
1N3847
Ipeak510m
StyleDO-25var
|
Untitled
Abstract: No abstract text available
Text: 1N3717 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 4.7m Peak Curr. Tol.12m Total Cap. (F)25p Ip/Iv Min7.6 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq3.4G Series Induct. (H).50n R(series) (Ohms).52 Neg Resist.24 Semiconductor MaterialGermanium
|
Original
|
PDF
|
1N3717
Vp65m
Vv355m
Ipeak510m
StyleDO-17
|
Untitled
Abstract: No abstract text available
Text: CKV2020-49 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio1.8 V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)200m Semiconductor MaterialSilicon Package StyleChip
|
Original
|
PDF
|
CKV2020-49
Voltage15
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
|
Original
|
PDF
|
PSMN004-25B,
PSMN004-25P
PSMN004-25P
O220AB)
PSMN004-25B
OT404
|
Untitled
Abstract: No abstract text available
Text: 1N2969 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.2m Peak Curr. Tol.20m Total Cap. (F)25p Ip/Iv Min7.6 Vp65m Vv350m Fwd Volt @Ipeak500m Resist. Cutoff Freq2.5G Series Induct. (H)4.0n R(series) (Ohms)1.0 Neg Resist.62 Semiconductor MaterialGermanium
|
Original
|
PDF
|
1N2969
Vp65m
Vv350m
Ipeak500m
StyleTO-18
|
Untitled
Abstract: No abstract text available
Text: DKV6534-18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)200m Semiconductor MaterialSilicon Package StyleAxial
|
Original
|
PDF
|
DKV6534-18
Voltage22
|
Untitled
Abstract: No abstract text available
Text: PH1227-3 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage24 Q Factor Min. f(co) Min. (Hz) Cut-off freq.15G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS
|
Original
|
PDF
|
PH1227-3
Voltage24
|
Untitled
Abstract: No abstract text available
Text: PL0137-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
|
Original
|
PDF
|
PL0137-2
|
Untitled
Abstract: No abstract text available
Text: PH1217-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS
|
Original
|
PDF
|
PH1217-2
Voltage15
|
Untitled
Abstract: No abstract text available
Text: PL0147-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
|
Original
|
PDF
|
PL0147-2
|
Untitled
Abstract: No abstract text available
Text: PL0157-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
|
Original
|
PDF
|
PL0157-2
|
Untitled
Abstract: No abstract text available
Text: D4217-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS
|
Original
|
PDF
|
D4217-2
Voltage15
|
PSMN004-25
Abstract: SOT404 channel p PSMN004-25B PSMN004-25P
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
|
Original
|
PDF
|
PSMN004-25B,
PSMN004-25P
PSMN004-25P
O220AB)
PSMN004-25B
OT404
PSMN004-25
SOT404 channel p
|
Untitled
Abstract: No abstract text available
Text: MS1168 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 50m Peak Curr. Tol.5.0m Total Cap. (F)25p Ip/Iv Min6.0 Vp90m Vv390m Fwd Volt @Ipeak510m Resist. Cutoff Freq Series Induct. (H).35n R(series) (Ohms).75 Neg Resist.4.0 Semiconductor MaterialGermanium
|
Original
|
PDF
|
MS1168
Vp90m
Vv390m
Ipeak510m
|
|
|
Untitled
Abstract: No abstract text available
Text: PL0107-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
|
Original
|
PDF
|
PL0107-2
|
Untitled
Abstract: No abstract text available
Text: PL0127-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
|
Original
|
PDF
|
PL0127-2
|
Untitled
Abstract: No abstract text available
Text: D4817-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W)4.5 Semiconductor MaterialSilicon Package StyleFuse Mounting StyleT
|
Original
|
PDF
|
D4817-2
Voltage15
|
Untitled
Abstract: No abstract text available
Text: D4837-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W)4.5 Semiconductor MaterialSilicon Package StyleFuse Mounting StyleT
|
Original
|
PDF
|
D4837-2
Voltage30
|
Untitled
Abstract: No abstract text available
Text: D4667-3 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.5.0G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
|
Original
|
PDF
|
D4667-3
Voltage90
|
PSMN004-25B
Abstract: PSMN004-25P
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
|
Original
|
PDF
|
PSMN004-25B,
PSMN004-25P
PSMN004-25P
O220AB)
PSMN004-25B
OT404
|
Untitled
Abstract: No abstract text available
Text: DKV3802-51 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio4.9 V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)200m Semiconductor MaterialSilicon Package StylePill-B
|
Original
|
PDF
|
DKV3802-51
Voltage22
|
Untitled
Abstract: No abstract text available
Text: DKV3802-49 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio1.8 V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)200m Semiconductor MaterialSilicon Package StylePill-B
|
Original
|
PDF
|
DKV3802-49
Voltage15
|
Untitled
Abstract: No abstract text available
Text: MA4950A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage240 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)35 Semiconductor MaterialSilicon Package StyleStR-10 Mounting StyleT
|
Original
|
PDF
|
MA4950A
Voltage240
StyleStR-10
|
25p05
Abstract: 25P06 Motorola 3-351 MOSFET S 1550 N motorola diode 739 SC189
Text: M O T OR OL A SC X S T R S /R IM E 0 I F MOTOROLA b3fc>7554 O G flT llS b | -r-3 • I SEM ICONDUCTOR TECHNICAL DATA M T H 25P 05 M T H 25P 06 M TM 25P05 M TM 25P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancement-Mode Silicon Gate T M O S
|
OCR Scan
|
PDF
|
25P05
25P06
25P06
Motorola 3-351
MOSFET S 1550 N
motorola diode 739
SC189
|
