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    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    PDF VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J

    37654

    Abstract: PAD5 PAD Series JPAD50 PAD50 SSTPAD100 diode pico-amp PAD1 sstpad5
    Text: PAD/JPAD/SSTPAD Series Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 JPAD50 SSTPAD5 SSTPAD100 Product Summary Part Number IR Max pA PAD1 –1 PAD5/JPAD5/SSTPAD5 –5 PAD50/JPAD50 –50 SSTPAD100 –100 Features Benefits Applications D Negligible Circuit Leakage Contribution


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    PDF PAD50 JPAD50 SSTPAD100 PAD50/JPAD50 P-37654--Rev. 25-Jul-94 37654 PAD5 PAD Series JPAD50 PAD50 SSTPAD100 diode pico-amp PAD1 sstpad5

    2N5545

    Abstract: 2N5546 2N5547
    Text: 2N5545/46/47/JANTX/JANTXV Monolithic N-Channel JFET Duals Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) 2N5545 –0.5 to –4.5 –50 1.5 –50 5 2N5546 –0.5 to –4.5 –50 1.5 –50 10 2N5547


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    PDF 2N5545/46/47/JANTX/JANTXV 2N5545 2N5546 2N5547 P-37514--Rev. 25-Jul-94 2N5545 2N5546 2N5547

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    PDF VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J

    2N5564

    Abstract: 2N5565 2N5566 jfet low noise n-chanel 2N5564 equivalent
    Text: 2N5564/5565/5566 Matched N-Chanel JFET Pairs Product Summary jVGS1 – VGS2j Max mV Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) 2N5564 –0.5 to –3 –40 7.5 –3 5 2N5565 –0.5 to –3 –40 7.5 –3 10 2N5566 –0.5 to –3 –40


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    PDF 2N5564/5565/5566 2N5564 2N5565 2N5566 P-37406--Rev. 25-Jul-94 2N5564 2N5565 2N5566 jfet low noise n-chanel 2N5564 equivalent

    VP0808B

    Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V


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    PDF VP0808B/L/M, VP1008B/L/M VP0808M VP1008B VP0808B VP0808L VP1008L VP1008M O-226AA) P-37655--Rev. VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M

    VCR2N

    Abstract: jfet transistor for VCR Siliconix JFET P channel Junction FET AN105 siliconix VCRN VCR7N
    Text: VCRN/4N/7N JFET Voltage-Controlled Resistors Product Summary Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N –7 –25 60 VCR4N –7 –25 600 VCR7N –5 –25 8000 For applications information see AN105. Features Benefits Applications


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    PDF AN105. P-37406--Rev. 25-Jul-94 VCR2N jfet transistor for VCR Siliconix JFET P channel Junction FET AN105 siliconix VCRN VCR7N

    VQ2004J

    Abstract: No abstract text available
    Text: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,


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    PDF VQ2004J P-37655--Rev. 25-Jul-94 VQ2004J

    matched pair JFET

    Abstract: TO71 package C 5198 Siliconix JFET Pairs Transistor C 5198 2N5564 2N5565 2N5566
    Text: 2N5564/5565/5566 Matched N-Chanel JFET Pairs Product Summary jVGS1 – VGS2j Max mV Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) 2N5564 –0.5 to –3 –40 7.5 –3 5 2N5565 –0.5 to –3 –40 7.5 –3 10 2N5566 –0.5 to –3 –40


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    PDF 2N5564/5565/5566 2N5564 2N5565 2N5566 P-37406--Rev. 25-Jul-94 matched pair JFET TO71 package C 5198 Siliconix JFET Pairs Transistor C 5198 2N5564 2N5565 2N5566

    TO-205AD

    Abstract: 2N6661 VN88AFD
    Text: 2N6661/VN88AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D D D


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    PDF 2N6661/VN88AFD 2N6661 VN88AFD 2N6661) P-37655--Rev. 25-Jul-94 TO-205AD 2N6661 VN88AFD

    zener diode 15 v

    Abstract: ultra low igss pA SD5400CY sst211 sot-143 5401 transistor datasheet SD5000 quad sd5000i SD5000N SD5001N SD5401CY
    Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V


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    PDF SD5000/5400 SD5000I SD5000N SD5001N SD5400CY SD5401CY zener diode 15 v ultra low igss pA SD5400CY sst211 sot-143 5401 transistor datasheet SD5000 quad sd5000i SD5000N SD5001N SD5401CY

    U421

    Abstract: "n-channel jfet" Siliconix JFET Dual Siliconix JFETs Dual Siliconix N-Channel JFETs Dual N-Channel JFET U423 JFET DUALS SST401 U421 jfet
    Text: U421/423 Monolithic N-Channel JFET Duals Product Summary Part Number VGS off (V) U421 –0.4 to –2 –40 U423 –0.4 to –2 –40 IG Max (pA) jVGS1 – VGS2j Max (mV) 0.3 –0.25 10 0.3 –0.25 25 V(BR)GSS Min (V) gfs Min (mS) Features Benefits Applications


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    PDF U421/423 P-37514--Rev. 25-Jul-94 U421 "n-channel jfet" Siliconix JFET Dual Siliconix JFETs Dual Siliconix N-Channel JFETs Dual N-Channel JFET U423 JFET DUALS SST401 U421 jfet

    2N5196

    Abstract: 5546 Siliconix JFET Duals 2N5199 40 v 20 amp, diode c 5198 Dual N-Channel JFET Transistor C 5198 jfet differential transistor 2N5197
    Text: 2N5196/5197/5198/5199 Monolithic N-Channel JFET Duals Product Summary Part Number VGS off (V) IG Max (pA) jVGS1 – VGS2j Max (mV) 2N5196 –0.7 to –4 –50 1 –15 5 2N5197 –0.7 to –4 –50 1 –15 5 2N5198 –0.7 to –4 –50 1 –15 10 2N5199 –0.7 to –4


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    PDF 2N5196/5197/5198/5199 2N5196 2N5197 2N5198 2N5199 P-37514--Rev. 25-Jul-94 2N5196 5546 Siliconix JFET Duals 2N5199 40 v 20 amp, diode c 5198 Dual N-Channel JFET Transistor C 5198 jfet differential transistor 2N5197

    SST174

    Abstract: J174 J175 J176 J177 SST175 j174 EQUIVALENT siliconix j174
    Text: J/SST174 Series P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 J/SST175 5 to 10 85 –10 25 3 to 6 125 –10 25 J/SST176 1 to 4 250 –10 25 J/SST177


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    PDF J/SST174 SST174 SST175 SST176 SST177 J/SST174 J/SST175 J/SST176 J/SST177 SST174 J174 J175 J176 J177 SST175 j174 EQUIVALENT siliconix j174

    S7 marking

    Abstract: siliconix j175 SST174
    Text: Tem ic J/SST174 Series S e m i c o n d u c t o r s P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 Product Summary P a rt N um ber V GS off (V) n>S(oD) M a x (Q ) Ipfoff) T y p (pA ) to N TVp (ns) J/SST174 5 to 10 85 -1 0 25 J/SST175 3 to 6


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    PDF J/SST174 J/SST175 J/SST176 J/SST177 SST174 SST175 SST176 SST177 P-37653-- S7 marking siliconix j175

    TO71 package

    Abstract: 2N5565 2n5564 2N5566
    Text: Tem ic 2N5564/5565/5566 S e m i c o n d u c t o r s Matched N-Chanel JFET Pairs Product Summary P a rt N u m b er VGS off (V) V (B R )G S S M in(V ) gis M in (mS) I g TVp (pA) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 t o -3 -40 7.5 -3 10 2N5566 -0.5 to -3


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    PDF 2N5564/5565/5566 2N5564 2N5565 2N5566 P-37406-- 25-Jul-94 TO71 package 2N5566

    Untitled

    Abstract: No abstract text available
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5


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    PDF VP0808B/L/M, VP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M Appli-12 P-37655--

    Untitled

    Abstract: No abstract text available
    Text: 4 3 DRAWING MADE IN THIRD ANGLE PROJECTION TH I S DRAWING IS UNPUBLISHED. £ COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 DIST G RIGHTS RESERVED. REVISIONS 14 ZONE LTR B DESCRIPTION REV 8 REDWN DATE PER 0 7 2 0 - 0 0 4 5-94 S 0 7 2 0 -1 2 4 - 9 4


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    PDF 25JUL94 LR7189 65mm2 t1123/duq] 123/u.

    E13288

    Abstract: No abstract text available
    Text: 4 DRAWING MADE THIS IN THIRD DRAWING 7 ANGLE IS UNPUBLISHED. COPYRIGHT 3 19 RELEASED BY ANP FOR PUBDICATION INCORPORATED. ALL 2 <3> PROJECTION INTERNATIONAL RIGHTS DI ST LOC ,19 REV I 5 I0N5 14 G RESERVED. P F LTR ZONE DESCRIPTION DATE REV PER 0 G 3 A - 0 1 2 3 - 0 2


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    PDF 0G3A-0123-02 07MAR02 MID-T-7928 B-545â HID-G-45204 65mm2 B-152 25-JUL-94 amp26463 /files/deptl123/dwq1123/u E13288

    t amp

    Abstract: No abstract text available
    Text: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 RIGHTS RESERVED. DIST REVISIONS 14 6 P F ZONE LTR DATE DESCRIPTION D ADDED 34107-1 PER PR 94-62


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    PDF 25JUL94 LR7189 B-152 t amp

    e328

    Abstract: LR7189 MIL-T-10727 MIL-T-7928 34114
    Text: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 RIGHTS RESERVED. DIST 14 6 REVISIONS P F ZONE LTR DESCRIPTION c ADDED 3 4 1 1 4 - 1 PER DATE


    OCR Scan
    PDF 25JUL9-4 LR7189 M792Q/7-5 22-1LES 65mm2 B-152 U71-fi 25-JULz94_ 26J63_ t1J23/duq] e328 MIL-T-10727 MIL-T-7928 34114

    LR7189

    Abstract: MIL-T-10727
    Text: 4 3 DRAWING MADE IN THIRD ANGLE PROJECTION TH I S DRAWING IS UNPUBLISHED. £ COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 DIST 14 G RIGHTS RESERVED. REVISIONS ZONE LTR DESCRIPTION DATE B REV 8 REDWN PER 0 7 2 0-004 5-94 S 0720-0 12 4-94


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    PDF 25JUL9-4 LR7189 B-152 MIL-T-10727 13JUN34 05AUG94 1471-fi 26J63_

    Untitled

    Abstract: No abstract text available
    Text: 4 DR AW IN G MADE IN THIRD AN GL E PROJ EC TI ON THIS DRAWING IS UNPUBLISHED. C COPY RI GH T 19 3 RELEASED FOR PUBLICATION BY AMP IN C O R P O R A T E D . 1 2 LOC ,19 6 ALL INTERNATIONAL R I GH TS RESERVED. DIST REVISIONS 14 P F ZONE LTR DE SC RI PT IO N


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    PDF 25JUL94 LR7189 B-152 11Z29/93

    Siliconix JFET Pairs

    Abstract: No abstract text available
    Text: Tem ic 2N5196/5197/5198/5199 S e m i c o n d u c t o r s Monolithic N-Channel JFET Duals Product Summary Part Number VGS 0ff (V ) V ( b r )g s s M in (V ) Ig Max (pA) | V g s i - V g s 2 Ì Max (m V ) 2N5196 -0 .7 t o - 4 -5 0 1 -1 5 5 2N5197 - 0 .7 to - 4


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    PDF 2N5196/5197/5198/5199 2N5196 2N5197 2N5198 2N5199 P-37514--Rev. 25-Jul-94 P-375 Siliconix JFET Pairs