RHF1204CM
Abstract: RHF1205CM RHF1251CM RHF1252CM
Text: GaAs Devices I 7026^ G D O V T B T TT2 •■ RHH ■Ultra—Low Noise Hetero Structured In GaAs FET Absolute maximum ratings (Ta=25’C) Type Electrical characteristics (Ta=25ftC) Application Vos (V) Id PD (mW) Tch OC) PG Typ. (dB) NF Typ. (dB) f (GHz)
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RHF1205CM
RHF1204CM
RHF1252CM
RHF1251CM
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3SK104
Abstract: 3SK137
Text: HITACHI 3SK137 SILICON N-CHANNEL DUAL GATE MOS FET UHF TV TUNER RF AMPLIFIER «W oa rU I S-aun;« ? C a ie I i C «’ ! Drji* ¡I! :nr:nn> s iri i'.lu:I dö&S MPAK-4 MAXIMUM CHANNEL PO W ER DISSIPATION CURVE ABSO LU TE MAXIMUM RATINGS (Ta=25#C) • Item
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3SK137
3SK137
900MIU
3SK104.
3SK104
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Mitsubishi transistor
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE f INSULATED TYPE I ! QM75E2Y/E3Y-2H 1 t • Ic Collector cu rren t. 75A j • V cex • hFE Collector-em itter v o lta g e . 1000V s DC current g a in . 75 j
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QM75E2Y/E3Y-2H
E80276
E80271
Mitsubishi transistor
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2SC4126
Abstract: 56x4 131-X
Text: HITACHI 2SC4126 SILICO N NPN EPITAXIAL VH F AND UHF W IDE DAND AMPLIFIER I Q Q“ i ¡a ä L „ T i *•« ! "" 1- Ö .61 äa1 >, Base 4 Emicirr Pipvi^l^iK in irán \d_q; -v. (MPAK-4) ■ AB S O LU T E M AXIM UM RATINGS (Ta=25BC) Item 2SC4126 Symbol Collector in
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2SC4126
2SC4126
56x4
131-X
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ML2230CCJ
Abstract: No abstract text available
Text: S1E D MICRO LINEAR icro Linear bO W lfl QQOnMS S ? S « H L N _ " T - 5 1 - 1 Q - 1¿ , . October 1990 p r e l im in a r y ML2230 liP Compatible 12-Bit Plus Sign A/D Converter with Sample and Hold GENERAL DESCRIPTION FEATURES Thè ML2230 is a member of Micro Linear's 12-bit plus sign
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ML2230
12-Bit
ML2230
ML2230,
ML223QB
ML2230C02
A3-A15
ML223Ã
ML2230CCJ
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2132G
Abstract: TI0121
Text: 54ACT11353, 74ACT11353 DUAL 1-0F-4 DATA SELEC T O RS/M U LTIPLEXER S WITH 3-STATE OUTPUTS TI0121— D3109. JUNE 19B8— REVISED MARCH 1990 • Inputs are TTL-Voltage Compatible 54A C T 11 3 53 . . . J PACKA GE 7 4 A C T 11 3 53 . . . D OR N P ACKA G E • Inverting Versions of 54ACT11253 and
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54ACT11353,
74ACT11353
TI0121--
D3109.
19B8--
54ACT11253
74ACT11253
300-mil
2132G
TI0121
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Untitled
Abstract: No abstract text available
Text: 01/21/2004 16:20 FAI 2194774856 OKAYA ELECTRIC 00 0 1 Okaya Electric America Inc. 503 Wall Street, Valparaiso, Indiana 4Ó363 Ph: 219-477-4488 / Fax: 21 9-477-4856 SPECIFICATION FOR APPROVAL MODEL TYPE: LCD MODULE MODEL N U M B E rT Î^ 6~ \ g l'? o ^ LQ S~ ~(\
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312864LRK-NRA-H
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ACT0244
Abstract: TI 07W ACQ244 ACT244 ACTQ244
Text: Semiconductor M arch 1993 54ACQ/74ACQ244 • 54ACTQ/74ACTQ244 Quiet Series Octal Buffer/Line Driver with TRI-STATE Outputs General Description Features The ’A C Q /’A C TQ 244 is an octal b u ffe r and line drive r d e signed to be em ployed as a m em ory address driver, clock
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54ACQ/74ACQ244
54ACTQ/74ACTQ244
ACTQ244
ACT0244
TI 07W
ACQ244
ACT244
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Untitled
Abstract: No abstract text available
Text: ADJUSTABLE PRECISION ZENER SHUNT REGULATOR ZR431C ISSUE 1 - FEB 94_ FEATURES * A ve ra g e te m p e ra tu re co e ffic ie n t 50 ppm /°C * T e m p e ra tu re c o m p e n sa te d fo r o p e ra tio n o v e r th e fu ll te m p e ra tu re range
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ZR431C
100pF
25ftC
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IRF 1640 G
Abstract: IRF 1640 DD-10V
Text: 4703B/4703BX FIRST-IN FIRST-OUT FIFO BUFFER MEMORY FA IR CH ILD CMOS MACROLOGIC DESCRIPTIO N — The 4703B /4703B X is an expandable fall-through type high-speed First-In First-O ut (F IF O ) B uffe r M em ory optim ized fo r high speed disc or tape c o n tro l
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4703B/4703BX
4703B
4703BX
/4703B
IRF 1640 G
IRF 1640
DD-10V
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MC6847
Abstract: MC1372 PN generator circuit TIC COL 02 RF modulator tv video modulator Transistor 034
Text: M y M O T O R O L A MC1372 SEMICONDUCTORS P.O B O X 20912 • P H O E N IX A R IZ O N A BS036 CO LO R TV V ID E O M O D U L A T O R C IR C U IT C O L O R T V V ID E O M O D U L A T O R S IL IC O N M O N O L IT H IC IN T E G R A T E D C IR C U IT . . . a n integrated circuit used to generate an R F T V signal from
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B5C36
MC1372
MC1372
MC6847
PN generator circuit
TIC COL 02
RF modulator
tv video modulator
Transistor 034
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PDF
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eer 35 CORE
Abstract: stk73907 EER42A 30k0 EER -42A EER 42a Npi pulse transformer STK73909 5008a STK73908
Text: Ordering number: EN 5008 Thick Film Hybrid 1C STK73903 No. 5008 SAHYO i Self-Excitation Type Feedback Control Switching Regulator 180W Output Overview Package D im ensions The STK73903 incorporates on-chip all the power switch ing, amplifier, overcurrent protection and driver circuits
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STK73903
STK73903
eer 35 CORE
stk73907
EER42A
30k0
EER -42A
EER 42a
Npi pulse transformer
STK73909
5008a
STK73908
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ACQ244
Abstract: ACT244 ACTQ244 55 volt switching power supply
Text: . & M arch 1993 54ACQ/74ACQ244 • 54ACTQ/74ACTQ244 Quiet Series Octal Buffer/Line Driver with TRI-STATE Outputs General Description Features The ’A C Q /’A C TQ 244 is an octal b u ffe r and line drive r d e signed to be em ployed as a m em ory address driver, clock
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54ACQ/74ACQ244
54ACTQ/74ACTQ244
ACTQ244
ACQ244
ACT244
55 volt switching power supply
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A254735
Abstract: TP2010L TP201 TP241 TP2410L
Text: SILICONIX INC SûE t • 0254735 0Q1727Û TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors 7tlb ■ SIX fTSEconix in c o r p o r a te d 'T* vi-zs PRODUCT SUMMARY TO-92 TO-226AA V (BR)DSS PART NUMBER BOTTOM VIEW ■d (A) '" s r TP2010L -200 10
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A254735
QQ1727Ã
TP201
TP241
TP2010L
TP2410L
VPDV24
O-226AA)
TP2410L
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EL2004G/883B
Abstract: el2m EL2004CG EL2004G EL2004L fet amplifier schematic MDP0002
Text: ELANTEC 2AE D INC HIGHPEBfOHMANCEAMAUiGISTEBRWEDCIHCUlTS a i a ^ S S ? OOOQTMtj 7 EL2004/EL2004C - 350 MHZ FET BllffCV ~ T ~ ~' ^ *7 3 5 ~ F eatu res G eneral D escrip tion • • • • • • • The EL2004 is a very high-speed, F E T input buffer/line driver
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EL2004/EL2004C
ELH0033â
MIL-STD-883B
EL2004CG
MDP0002
EL2004G
EL2MHG/883B
EL2004
EL2004G/883B
el2m
EL2004CG
EL2004L
fet amplifier schematic
MDP0002
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Untitled
Abstract: No abstract text available
Text: r r i m LT1581/LT1581 -2.5 m TECHNOLOGY 10A, Very Low D ropout R eg ulato r F€OTUR€S D€SCRIPTIOfl • Lo w Dropout, 4 30m V at 1 0 A Output Current ■ Fast Transient Response ■ Rem ote Sense The LT 1581 is a 10A low dropout regulator designed to
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LT1581/LT1581
10OmV
430mV
LT1584.
LT1581.
100mA
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TRANSISTOR IFW
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH150 D esigner's Data Sheet POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH150 has an application specific state-of-art die designed for use in 150 Watts Halogen electronic transformers.
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BUH150
BUH150
TRANSISTOR IFW
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ic 747 cn
Abstract: 2SD664 AC74 T714
Text: 9 0 9 7250 TOSHIBA dÉT ^0=17550 0 0 0 7 7 4 7 ~SÍ TOSHIBA { D I S C R E T E / O P T O 56C <0ISCRETE/OPTO T 1 ” T-33-29 0 7 747 SIL IC O N NPN T R IP L E D IF F U SE D TYPE (D A R L IN G T O N POWER)_ 2SD664 Unit in nun 015« 7 M A X HIGH POWER SWITCHING APPLICATIONS.
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T-33-29
2SD664
25ttC)
RHO5555555555W55555555855555WW55555555OYY
000774e]
ic 747 cn
2SD664
AC74
T714
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APT90GF100JN
Abstract: sgs Thomson Thyristor G0011
Text: ADVANCED POWER M TECHNOLOGY b3 E D • 0257^01 DOÜllflD 201 * A V P A dvanced P o w er Te c h n o lo g y APT90GF100JN 1000V 90A H SINGLE DIE ISOTOP® PACKAGE ISOTOP«' POWER MOS IV®IGBT Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE
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02S7101
APT90GF100JN
E145592
08Vces
OT-227
sgs Thomson Thyristor
G0011
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PDF
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SN74121
Abstract: LF198 LF198A LF398 LF398A LF398AL LF398AP LF398JG LF398L LF398P
Text: LF198, LF198A, LF398, LF398A PRECISION SAMPLE-AND-HOLD AMPLIFIERS D3218, JULY 1988 - REVISED MARCH 1989 JG O R P P A C K A G E Acquisition Time . . . 4 ^is Typ TOP VIEW Gain Error . . . 0.01% Max, 0.001% Typ (or LF198A, LF398A vc c + [ u O FFSET ADJ [ IN [_
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LF198,
LF198A,
LF398,
LF398A
D3218,
SN74121
LF198
LF198A
LF398
LF398A
LF398AL
LF398AP
LF398JG
LF398L
LF398P
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PDF
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Untitled
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR SRAS820 - SRAS8150 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers D*PAK RoHS C O M P LIA N C E * _ Features '• r' 'V •v■v❖ ■<? 4■> For surface m ounted application Ideal for autom ated pick & place Low po w e r loss, high efficiency
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SRAS820
SRAS8150
IL-STD-202,
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PDF
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Untitled
Abstract: No abstract text available
Text: BAGM 065 388880 Specification C e lls P e r U n it V o lta g e P e r U n it 12 C a p a c ity 6 5 A h @ 1 0 h r-ra te to 1 .7 5 V p e r c e ll @ 25°C W e ig h t A p p ro x . 2 2 .2 Kg 3 25 A 5 s e c In te r n a l R e s is ta n c e A p p ro x . 6 m Q O p e r a tin g T e m p e r a tu r e R a n g e
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TLV2341
Abstract: TLV2341IDR TLV2341IPWLE TLV2341Y TLV2342 b1724
Text: TLV2341I, TLV2341Y LinCMOS PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS _ SLO S110 - MAY 1992 W id e Range o f Su pp ly Voltages O ver Specified Tem peratu re Range: T a = —40°C to 85°C . . . 2 V to 8 V Low N o is e . . . 25 nV/VHz Typically at
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TLV2341I,
TLV2341Y
SLOS110
Vat25Â
slos110-may
65S303
TLV2341
TLV2341IDR
TLV2341IPWLE
TLV2342
b1724
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PDF
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2SC3380
Abstract: tac l2
Text: HITACHI 2SC3380 SILICON NPN TRIPLE DlFFUSEO HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER HIGH VOLTAGE SWITCH 4 p i 0.1 i e Max ri ] S t 0.1 X U0S3 m j < n t j 0.48 Ma* 1L- -ir r r 3U - 3.CL L T q It -I” o' I, Uk* Î CVlNW i 5 tjn ! •;< i í/¿ j_ •i CulkCUX
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2SC3380
2SC3J80
Ta-25Â
2SC3380
tac l2
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