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    25B SOT23 Search Results

    25B SOT23 Result Highlights (1)

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    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    25B SOT23 Datasheets Context Search

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    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original     		PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    ZRA25001

    Abstract: ZRA250-01 ZRA250F01 ZRA250 25B SOT23
    Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 2 - NOVEMBER 1996 DEVICE DESCRIPTION • • • • • • • • The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in


    Original     		PDF ZRA250 ZRA250 ZRA250A03 ZRA250A02 ZRA250A01 ZRA250A005 ZRA250F03 ZRA25001 ZRA250-01 ZRA250F01 25B SOT23

    tray qfn 6x6

    Abstract: tqfp 7x7 tray QFN tray 5x5 QFN tray QFn Package tray QFN tray qfn 4x4 QFN tray 4x4 LQFP Package tray 6x6 TRAY tray QFN 5x5
    Text: Supertex Packaging Specifications Suffix Package Type B1 B2 FB FG FG FG FG GA GA K1 K1 K2 K4 K4 K5 K6 K6 K6 K6 K6 K6 K6 K6 K6 K6 K7 K7 K7 K7 K7 K7 LG L / LL MG MG N2 N3 N3 N5 N8 NG NG P P P P PG PG PG PG PJ PJ PJ SG T TG WG WG WG WG 26L BCC 84L BCC+ 64B FCBGA


    Original     		PDF O-236AB OT-23) OT-23 O-220 O-252 OT-223 QFN00/Reel 490/Tray tray qfn 6x6 tqfp 7x7 tray QFN tray 5x5 QFN tray QFn Package tray QFN tray qfn 4x4 QFN tray 4x4 LQFP Package tray 6x6 TRAY tray QFN 5x5

    HV9120NG-G

    Abstract: HV9911 HV220GA-G HV2701FG-G HV7802 HV9910BNG-G HV9933 PJ SOT23 HV9961 HV9910B
    Text: Supertex inc. PART Products MSL and Maximum Temperature Ratings Device PKG Code PKG Type MSL MAX Solder Temp OC HV100K5-G K5 3L SOT-223 1 260 HV101K5-G K5 3L SOT-223 1 260 HV110K4-G K4 5L TO-252 3 260 HV20220PJ-G PJ 28L PLCC 1 245 HV20220FG-G FG 48L LQFP


    Original     		PDF HV100K5-G OT-223 HV101K5-G HV110K4-G O-252 HV20220PJ-G HV20220FG-G HV20320PJ-G HV20720PJ-G HV9120NG-G HV9911 HV220GA-G HV2701FG-G HV7802 HV9910BNG-G HV9933 PJ SOT23 HV9961 HV9910B

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703

    ZRA25001

    Abstract: ZRA250A01 ZRA250A02 ZRA250 ZRA250A005 ZRA250A03 ZRA250F005 ZRA250F01 ZRA250F02 ZRA250F03
    Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 3 - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in small outline surface mount packages,


    Original     		PDF ZRA250 ZRA250 ZRA250R1 ZRA250A005 ZRA250005 ZRA250R005 ZRA250R05 ZRA250F03 ZRA25001 ZRA250A01 ZRA250A02 ZRA250A005 ZRA250A03 ZRA250F005 ZRA250F01 ZRA250F02 ZRA250F03

    ZRA250

    Abstract: ZRA250A005 ZRA250A01 ZRA250A02 ZRA250A03 ZRA250F005 ZRA250F01 ZRA250F02 ZRA250F03 ZRC250
    Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 4 - APRIL 2002 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in small outline surface mount packages,


    Original     		PDF ZRA250 ZRA250 ZRA250R1 ZRA250A005 ZRA250005 ZRA250R005 ZRA250R05 ZRA250F03 ZRA250A005 ZRA250A01 ZRA250A02 ZRA250A03 ZRA250F005 ZRA250F01 ZRA250F02 ZRA250F03 ZRC250

    ZRA250

    Abstract: ZRA250A005 ZRA250A01 ZRA250A02 ZRA250A03 ZRA250F005 ZRA250F01 ZRA250F02 ZRA250F03 ZRC250
    Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 5 - JANUARY 2006 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in small outline surface mount packages,


    Original     		PDF ZRA250 ZRA250 ZRA250R1 ZRA250A005 ZRA250005 ZRA250R005 ZRA250R05 ZRA250F03 ZRA250A005 ZRA250A01 ZRA250A02 ZRA250A03 ZRA250F005 ZRA250F01 ZRA250F02 ZRA250F03 ZRC250

    CHBZ9V1BGP

    Abstract: CHBZ10BGP CHBZ11BGP CHBZ12BGP CHBZ13BGP CHBZ14BGP CHBZ15BGP CHBZ16BGP CHBZ17BGP CHBZ18BGP
    Text: CHBZ2V4BGP CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT ZENER DUAL SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 2.4V TO 51V CHBZ51BGP FEATURE High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes.


    Original     		PDF CHBZ51BGP OT-23 -55oC 150oC CHBZ9V1BGP CHBZ10BGP CHBZ11BGP CHBZ12BGP CHBZ13BGP CHBZ14BGP CHBZ15BGP CHBZ16BGP CHBZ17BGP CHBZ18BGP

    ISL28915

    Abstract: No abstract text available
    Text: Nano Power, Push/Pull Output Comparator ISL28915 Features The ISL28915 is a nano power comparator optimized for low-power applications. This device is designed for single-supply operation from 1.8V to 5.5V and typically consumes 500nA of supply current. These devices also feature


    Original     		PDF ISL28915 ISL28915 500nA OT-23 5M-1994. MO-178AA. FN8343

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor

    IRF P CHANNEL MOSFET

    Abstract: irf p channel IRF5851 IRF5800 IRF5850 SI3443DV
    Text: PD-93998 IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International


    Original     		PDF PD-93998 IRF5851 requi05 IRF5806 IRF P CHANNEL MOSFET irf p channel IRF5851 IRF5800 IRF5850 SI3443DV

    irf MOSFET p-CH

    Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
    Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description


    Original     		PDF PD-95341 IRF5851PbF irf MOSFET p-CH IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23

    marking 25b sot23

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b72SM 0Cm 25b no Tb b MOTOROLA •l SEM ICONDUCTOR TECHNICAL DATA The RF Line MMBR5179L Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . d e s ig n e d fo r sm a ll-sig n a l a m p lifica tio n at fre q u e n cie s to 500 M H z. S p e c if­


    OCR Scan     		PDF b3b72SM MMBR5179L 2N5179 marking 25b sot23

    ZRA500F03

    Abstract: ZRB500F01 ZRA500F01 40b sot23 ZRC330F01 ZRA400F01 ZRA400F02 ZRA400F03 ZRA500F02 ZRB500F02
    Text: SOT23 PRECISION VOLTAGE REFERENCES Pinout : 1-Floating or connect to pin2 , 2-Anode, 3-Cathode Vr !r M in !r M ax TC Rs M ax Pfot V |iA mA ppm/“C Q mW Code ZRB500F01 4.95/5.05 50 15 50 1.5 330 501 ZRB500F02 4.90/5.10 50 15 50 1.5 330 50H ZRB500F03 4.85/5.15


    OCR Scan     		PDF ZRB500F01 ZRB500F02 ZRB500F03 ZRA500F01 ZRA500F02 ZRA500F03 ZRA400F01 ZRA400F02 ZRA400F03 ZRC330F01 40b sot23

    ZRA500F03

    Abstract: ZRB500F01 ZRA500F02 ZRA250F01
    Text: SOT23 PRECISION VOLTAGE REFERENCES Pinout : 1-Floating or connect to pin2 , 2-Anode, 3-Cathode Vr !r Min !r Max TC Rs Max Plot V HA mA ppm/°C il mW Type Device Code ZRB500F01 4.95/5.05 50 15 50 1.5 330 501 ZRB500F02 4.90/5.10 50 15 50 1.5 330 50H ZRB500F03


    OCR Scan     		PDF ZRB500F01 ZRB500F02 ZRB500F03 ZRA500F01 ZRA500F02 ZRA500F03 ZRA400F01 ZRA400F02 ZRA400F03 ZRC330F01 ZRA500F03 ZRA250F01

    ZRA25001

    Abstract: ZRA25002 ZRA250-01 ZRA250R01
    Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 2 - NOVEMBER 1996 DEVICE DESCRIPTION • No stabilising capacitor required The ZRA250 uses a bandgap circuit design to achieve a precision m ic ro p o w e r volta ge reference of 2.5 volts. The device is available in


    OCR Scan     		PDF ZRA250 30ppm/ ZRA250 ZRA250A03 ZRA250A02 ZRA250A01 ZRA250A005 ZRA25001 ZRA25002 ZRA250-01 ZRA250R01

    VPS053

    Abstract: No abstract text available
    Text: SIEMENS Gehäusebauformen Package Outlines Dieses Gehäuse ist nicht mehr lieferbar! This package is not available! / i1— - 4.75 T — VMT05Î60 13.5 — * 1 5.5 i t 1— 2.54 5.2 3 TO-18 Pin Gewicht etwa 0,3 g Approx. weight 0.3 g 1 2 3 S G D Figure 1


    OCR Scan     		PDF VMT05 GPT05548 E-6288 M13-GM135273 M17-GM175569 VPS053

    nte 2343

    Abstract: No abstract text available
    Text: SILICON DARLINGTON TRANSISTORS IN ORDER OF NTE PART NUMBER NPN PNP Circuit Outline Description Letter Maximum Breakdown Voltage NTE Type Number Case Style Diag. Number Maximum Continuous Collector Current (Amps) Collector to Base (Volts) Collector to Emitter


    OCR Scan     		PDF OT-23 OT-89 nte 2343

    ir150

    Abstract: No abstract text available
    Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 2 - NOVEMBER 1996 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in small outline surface mount packages, ideal for


    OCR Scan     		PDF ZRA250 ZRA250 ZRA250005 ZRA250R005 ZRA25R05 ZRA250Y005 ZRA250F01 ir150

    zra25001

    Abstract: No abstract text available
    Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 2 - NOVEMBER 1996 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision m icrop ow er voltage reference of 2.5 volts. The device is available in small outline surface mount packages, ideal for


    OCR Scan     		PDF ZRA250 ZRA250 ZRA250005 ZRA25001 ZRA250R01 ZRA250Y01 ZRA250F02 ZRA250N802 ZRA250A02 zra25001

    25b zrc250

    Abstract: No abstract text available
    Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 3 - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision m icropow er voltage reference o f 2.5 volts. The device is available in sm all outline surface m ount packages,


    OCR Scan     		PDF ZRA250 ZRA250 toZRA250F03 ZRA250F02 ZRA25OF01 ZRA250F005 ZRA250N803 ZRA250N802 25b zrc250

    25B SOT23-3

    Abstract: No abstract text available
    Text: 19-0344: Rev 1; 2/95 y w y ix iv M 3-P in M ic ro p ro c e s s o r R e s e t C irc u it These circuits perform a single function: They assert a reset signal whenever the Vcc supply voltage declines below a preset threshold, keeping it asserted for at least


    OCR Scan     		PDF MAX809/MAX810 140ms MAX809 MAX809L/T MAX810L/T 25B SOT23-3