transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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ZRA25001
Abstract: ZRA250-01 ZRA250F01 ZRA250 25B SOT23
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 2 - NOVEMBER 1996 DEVICE DESCRIPTION • • • • • • • • The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in
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ZRA250
ZRA250
ZRA250A03
ZRA250A02
ZRA250A01
ZRA250A005
ZRA250F03
ZRA25001
ZRA250-01
ZRA250F01
25B SOT23
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tray qfn 6x6
Abstract: tqfp 7x7 tray QFN tray 5x5 QFN tray QFn Package tray QFN tray qfn 4x4 QFN tray 4x4 LQFP Package tray 6x6 TRAY tray QFN 5x5
Text: Supertex Packaging Specifications Suffix Package Type B1 B2 FB FG FG FG FG GA GA K1 K1 K2 K4 K4 K5 K6 K6 K6 K6 K6 K6 K6 K6 K6 K6 K7 K7 K7 K7 K7 K7 LG L / LL MG MG N2 N3 N3 N5 N8 NG NG P P P P PG PG PG PG PJ PJ PJ SG T TG WG WG WG WG 26L BCC 84L BCC+ 64B FCBGA
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O-236AB
OT-23)
OT-23
O-220
O-252
OT-223
QFN00/Reel
490/Tray
tray qfn 6x6
tqfp 7x7 tray
QFN tray 5x5
QFN tray
QFn Package tray
QFN tray qfn 4x4
QFN tray 4x4
LQFP Package tray
6x6 TRAY
tray QFN 5x5
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HV9120NG-G
Abstract: HV9911 HV220GA-G HV2701FG-G HV7802 HV9910BNG-G HV9933 PJ SOT23 HV9961 HV9910B
Text: Supertex inc. PART Products MSL and Maximum Temperature Ratings Device PKG Code PKG Type MSL MAX Solder Temp OC HV100K5-G K5 3L SOT-223 1 260 HV101K5-G K5 3L SOT-223 1 260 HV110K4-G K4 5L TO-252 3 260 HV20220PJ-G PJ 28L PLCC 1 245 HV20220FG-G FG 48L LQFP
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HV100K5-G
OT-223
HV101K5-G
HV110K4-G
O-252
HV20220PJ-G
HV20220FG-G
HV20320PJ-G
HV20720PJ-G
HV9120NG-G
HV9911
HV220GA-G
HV2701FG-G
HV7802
HV9910BNG-G
HV9933
PJ SOT23
HV9961
HV9910B
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str 5707
Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
str 5707
2SC 8050
scr ky 202
TRANSISTOR J 5804 NPN
str 6709
TRANSISTOR J 5804
2sc 8188
lr 2905 transistor
2sc 8187
2SD 5703
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ZRA25001
Abstract: ZRA250A01 ZRA250A02 ZRA250 ZRA250A005 ZRA250A03 ZRA250F005 ZRA250F01 ZRA250F02 ZRA250F03
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 3 - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in small outline surface mount packages,
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ZRA250
ZRA250
ZRA250R1
ZRA250A005
ZRA250005
ZRA250R005
ZRA250R05
ZRA250F03
ZRA25001
ZRA250A01
ZRA250A02
ZRA250A005
ZRA250A03
ZRA250F005
ZRA250F01
ZRA250F02
ZRA250F03
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ZRA250
Abstract: ZRA250A005 ZRA250A01 ZRA250A02 ZRA250A03 ZRA250F005 ZRA250F01 ZRA250F02 ZRA250F03 ZRC250
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 4 - APRIL 2002 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in small outline surface mount packages,
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ZRA250
ZRA250
ZRA250R1
ZRA250A005
ZRA250005
ZRA250R005
ZRA250R05
ZRA250F03
ZRA250A005
ZRA250A01
ZRA250A02
ZRA250A03
ZRA250F005
ZRA250F01
ZRA250F02
ZRA250F03
ZRC250
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ZRA250
Abstract: ZRA250A005 ZRA250A01 ZRA250A02 ZRA250A03 ZRA250F005 ZRA250F01 ZRA250F02 ZRA250F03 ZRC250
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 5 - JANUARY 2006 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in small outline surface mount packages,
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ZRA250
ZRA250
ZRA250R1
ZRA250A005
ZRA250005
ZRA250R005
ZRA250R05
ZRA250F03
ZRA250A005
ZRA250A01
ZRA250A02
ZRA250A03
ZRA250F005
ZRA250F01
ZRA250F02
ZRA250F03
ZRC250
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CHBZ9V1BGP
Abstract: CHBZ10BGP CHBZ11BGP CHBZ12BGP CHBZ13BGP CHBZ14BGP CHBZ15BGP CHBZ16BGP CHBZ17BGP CHBZ18BGP
Text: CHBZ2V4BGP CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT ZENER DUAL SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 2.4V TO 51V CHBZ51BGP FEATURE High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes.
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CHBZ51BGP
OT-23
-55oC
150oC
CHBZ9V1BGP
CHBZ10BGP
CHBZ11BGP
CHBZ12BGP
CHBZ13BGP
CHBZ14BGP
CHBZ15BGP
CHBZ16BGP
CHBZ17BGP
CHBZ18BGP
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ISL28915
Abstract: No abstract text available
Text: Nano Power, Push/Pull Output Comparator ISL28915 Features The ISL28915 is a nano power comparator optimized for low-power applications. This device is designed for single-supply operation from 1.8V to 5.5V and typically consumes 500nA of supply current. These devices also feature
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ISL28915
ISL28915
500nA
OT-23
5M-1994.
MO-178AA.
FN8343
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2SD 4206
Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
2SD 4206
str 5707
ky 201 thyristor
scr ky 202
2SD 4206 npn
gi 9444 diode
TRANSISTOR SMD 9014
2SD 5703
STR 6757
TRANSISTOR SMD DK QC
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TRANSISTOR SMD 613
Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
TRANSISTOR SMD 613
TRANSISTOR SMD DK QC
transistor SMD DK -RN
Sanken Schottky Diode Mi 15
spx 3955
SANKEN power supply
diode zener smd sg 64
transistor SMD DK qs
301 miniature smd transistor
KY smd transistor
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IRF P CHANNEL MOSFET
Abstract: irf p channel IRF5851 IRF5800 IRF5850 SI3443DV
Text: PD-93998 IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International
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PD-93998
IRF5851
requi05
IRF5806
IRF P CHANNEL MOSFET
irf p channel
IRF5851
IRF5800
IRF5850
SI3443DV
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irf MOSFET p-CH
Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description
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PD-95341
IRF5851PbF
irf MOSFET p-CH
IRF P CHANNEL MOSFET
marking 27A sot-23
IRF5800
IRF5851
IRF5852
IRF n CHANNEL MOSFET
marking 25b sot23
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marking 25b sot23
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4bE D b3b72SM 0Cm 25b no Tb b MOTOROLA •l SEM ICONDUCTOR TECHNICAL DATA The RF Line MMBR5179L Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . d e s ig n e d fo r sm a ll-sig n a l a m p lifica tio n at fre q u e n cie s to 500 M H z. S p e c if
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b3b72SM
MMBR5179L
2N5179
marking 25b sot23
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ZRA500F03
Abstract: ZRB500F01 ZRA500F01 40b sot23 ZRC330F01 ZRA400F01 ZRA400F02 ZRA400F03 ZRA500F02 ZRB500F02
Text: SOT23 PRECISION VOLTAGE REFERENCES Pinout : 1-Floating or connect to pin2 , 2-Anode, 3-Cathode Vr !r M in !r M ax TC Rs M ax Pfot V |iA mA ppm/“C Q mW Code ZRB500F01 4.95/5.05 50 15 50 1.5 330 501 ZRB500F02 4.90/5.10 50 15 50 1.5 330 50H ZRB500F03 4.85/5.15
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ZRB500F01
ZRB500F02
ZRB500F03
ZRA500F01
ZRA500F02
ZRA500F03
ZRA400F01
ZRA400F02
ZRA400F03
ZRC330F01
40b sot23
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ZRA500F03
Abstract: ZRB500F01 ZRA500F02 ZRA250F01
Text: SOT23 PRECISION VOLTAGE REFERENCES Pinout : 1-Floating or connect to pin2 , 2-Anode, 3-Cathode Vr !r Min !r Max TC Rs Max Plot V HA mA ppm/°C il mW Type Device Code ZRB500F01 4.95/5.05 50 15 50 1.5 330 501 ZRB500F02 4.90/5.10 50 15 50 1.5 330 50H ZRB500F03
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ZRB500F01
ZRB500F02
ZRB500F03
ZRA500F01
ZRA500F02
ZRA500F03
ZRA400F01
ZRA400F02
ZRA400F03
ZRC330F01
ZRA500F03
ZRA250F01
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ZRA25001
Abstract: ZRA25002 ZRA250-01 ZRA250R01
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 2 - NOVEMBER 1996 DEVICE DESCRIPTION • No stabilising capacitor required The ZRA250 uses a bandgap circuit design to achieve a precision m ic ro p o w e r volta ge reference of 2.5 volts. The device is available in
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ZRA250
30ppm/
ZRA250
ZRA250A03
ZRA250A02
ZRA250A01
ZRA250A005
ZRA25001
ZRA25002
ZRA250-01
ZRA250R01
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VPS053
Abstract: No abstract text available
Text: SIEMENS Gehäusebauformen Package Outlines Dieses Gehäuse ist nicht mehr lieferbar! This package is not available! / i1— - 4.75 T — VMT05Î60 13.5 — * 1 5.5 i t 1— 2.54 5.2 3 TO-18 Pin Gewicht etwa 0,3 g Approx. weight 0.3 g 1 2 3 S G D Figure 1
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VMT05
GPT05548
E-6288
M13-GM135273
M17-GM175569
VPS053
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nte 2343
Abstract: No abstract text available
Text: SILICON DARLINGTON TRANSISTORS IN ORDER OF NTE PART NUMBER NPN PNP Circuit Outline Description Letter Maximum Breakdown Voltage NTE Type Number Case Style Diag. Number Maximum Continuous Collector Current (Amps) Collector to Base (Volts) Collector to Emitter
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OT-23
OT-89
nte 2343
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ir150
Abstract: No abstract text available
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 2 - NOVEMBER 1996 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in small outline surface mount packages, ideal for
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ZRA250
ZRA250
ZRA250005
ZRA250R005
ZRA25R05
ZRA250Y005
ZRA250F01
ir150
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zra25001
Abstract: No abstract text available
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 2 - NOVEMBER 1996 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision m icrop ow er voltage reference of 2.5 volts. The device is available in small outline surface mount packages, ideal for
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ZRA250
ZRA250
ZRA250005
ZRA25001
ZRA250R01
ZRA250Y01
ZRA250F02
ZRA250N802
ZRA250A02
zra25001
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25b zrc250
Abstract: No abstract text available
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRA250 ISSUE 3 - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZRA250 uses a bandgap circuit design to achieve a precision m icropow er voltage reference o f 2.5 volts. The device is available in sm all outline surface m ount packages,
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ZRA250
ZRA250
toZRA250F03
ZRA250F02
ZRA25OF01
ZRA250F005
ZRA250N803
ZRA250N802
25b zrc250
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25B SOT23-3
Abstract: No abstract text available
Text: 19-0344: Rev 1; 2/95 y w y ix iv M 3-P in M ic ro p ro c e s s o r R e s e t C irc u it These circuits perform a single function: They assert a reset signal whenever the Vcc supply voltage declines below a preset threshold, keeping it asserted for at least
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MAX809/MAX810
140ms
MAX809
MAX809L/T
MAX810L/T
25B SOT23-3
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