Untitled
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Flat Coils - PG0006 and PG0138 Series Height: 6.0mm Max PG0006 - 4.8mm Max (PG0138) Footprint: 13.4mm x 13.3mm (PG0006) 13.0mm x 12.8mm (PG0138) Current Rating: up to 25ADC Inductance Range 0.50µH to 5.0µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 1
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PG0006
PG0138
PG0006)
PG0138)
25ADC
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PG0138
Abstract: pg0006.422
Text: SMT POWER INDUCTORS Flat Coils - PG0006, PG0067 and PG0138 Series Height: 6.0mm Max PG0006 - 4.8mm Max (PG0138) - 4.0mm Max (PG0067) Footprint: 13.4mm x 13.3mm (PG0006) 13.0mm x 12.8mm (PG0067 & PG0138) Current Rating: up to 25ADC Inductance Range .27µH to 5.0µH
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PG0006,
PG0067
PG0138
PG0006)
PG0138)
PG0067)
PG0067
25ADC
pg0006.422
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Untitled
Abstract: No abstract text available
Text: DIMENSIONS: A B 6.00" MAX. C D E F G LABEL 195G25 5.0 mH @ 25ADC DATE CODE MADE IN CANADA ELECTRICAL DATA: C TESTS Iex ACCEPTANCE CRITERIA CONDITIONS @ 5V, 60Hz, 1.91 - 2.58A @ 25ADC = Inductance DCR HIPOT OPERATING VOLTAGE OPERATING VOLTAGE OPERATING TEMPERATURE
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195G25
25ADC
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Untitled
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Flat Coils - PG0006 and PG0138 Series Height: 6.0mm Max PG0006 - 4.8mm Max (PG0138) Footprint: 13.4mm x 13.3mm (PG0006) 13.0mm x 12.8mm (PG0138) Current Rating: up to 25ADC Inductance Range 0.50µH to 5.0µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 1
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PG0006
PG0138
PG0006)
PG0138)
25ADC
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Untitled
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Flat Coils - PG0006 and PG0138 Series Height: 6.0mm Max PG0006 - 4.8mm Max (PG0138) Footprint: 13.4mm x 13.3mm (PG0006) 13.0mm x 12.8mm (PG0138) Current Rating: up to 25ADC Inductance Range 0.50µH to 5.0µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 1
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PG0006
PG0138
PG0006)
PG0138)
25ADC
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Untitled
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Shielded Shaped Core - PG0006, PG0067 and PG0138 Series Height: 6.0mm Max PG0006 - 5.0mm Max (PG0138) - 4.0mm Max (PG0067) Footprint: 13.4mm x 13.3mm (PG0006) 13.0mm x 12.8mm (PG0067 & PG0138) Current Rating: up to 25Adc Inductance Range .27µH to 5.0µH
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PG0006,
PG0067
PG0138
PG0006)
PG0138)
PG0067)
PG0067
25Adc
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Untitled
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Flat Coils - PG0006 and PG0138 Series Height: 6.0mm Max PG0006 - 4.8mm Max (PG0138) Footprint: 13.4mm x 13.3mm (PG0006) 13.0mm x 12.8mm (PG0138) Current Rating: up to 25ADC Inductance Range 0.50µH to 5.0µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 1
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PG0006
PG0138
PG0006)
PG0138)
25ADC
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SDR953M
Abstract: SDR954M SDR955M SDR956M
Text: SDR953M & Z Thru SDR956M & Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 50A, 35nsec, 300-600 V Hyper Fast Rectifier Part Number/Ordering Information 1/
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SDR953M
SDR956M
35nsec,
SDR95
O-254,
O-254Z
35nsec
10VDC,
O-254
O-254Z
SDR953M
SDR954M
SDR955M
SDR956M
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Untitled
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Power Beads - PA314xAHL Series Coupled Inductor 8mm Coupled Inductors for Volterra Gen2.5 Applications For use only with Volterra chipsets Coupled Inductors enable: • Phase ripple current reduction due to AC magnetic field cancellation within the
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PA314xAHL
PA3142AHL
PA3143AHL
PA3145AHL
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SED110LB30
Abstract: SED110LE30
Text: PRELIMINARY SED110LB30 SED110LE30 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 110 AMP 30 VOLTS SCHOTTKY RECTIFIER Designer's Data Sheet FEATURES: Low Reverse Leakage
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SED110LB30
SED110LE30
175oC
25ADC,
50ADC,
110ADC,
SED110KB30
SED110KE30
SED110LB30
SED110LE30
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SDR950S1
Abstract: SDR951S1 SDR952S1
Text: SDR950S1 THRU SDR952S1 Solid State Devices, Inc. 14701Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 60 AMP 100-200 Volts 35nsec Hyper Fast Rectifier Features:
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SDR950S1
SDR952S1
14701Firestone
35nsec
35nsec
RH0037C
SDR950S1
SDR951S1
SDR952S1
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ipc-9592b
Abstract: QBVW025A0B54Z
Text: GE Data Sheet QBVW025A0B Barracuda* Series; DC-DC Converter Power Modules 36-75Vdc Input; 12.0Vdc, 25.0A, 300W Output RoHS Compliant Applications • Distributed power architectures • Intermediate bus voltage applications Servers and storage applications
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36-75Vdc
QBVW025A0B
2011/65/EU
12Vdc,
25Adc
CC109169875
CC109166204
CC109168407
CC109173167
ipc-9592b
QBVW025A0B54Z
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75VD
Abstract: No abstract text available
Text: Data Sheet September 23, 2011 QBVW025A0B Series Power Modules; DC-DC Converters 36-75Vdc Input; 12Vdc Output; 25A Output Current BARRACUDA SERIES Features • • RoHS Compliant Applications Distributed power architectures
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QBVW025A0B
36-75Vdc
12Vdc
2002/95/EC
12Vdc,
25Adc
1-972-244-WATT
ds11-002
75VD
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transistor IGBT 30004
Abstract: Transistor 30004 SCI0251700 Transistor 30004 to 3 B-2509 WF070000
Text: celduc r e l a i S/CON/SCI0251700/B/25/09/08 s PRELIMINARY DATA Page 1/5 UK IGBT BASED DC SOLID-STATE RELAY SCI0251700 u Latest high voltage IGBT technology generation. u New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.
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S/CON/SCI0251700/B/25/09/08
SCI0251700
820VDC
NFEN55011
1K470000
transistor IGBT 30004
Transistor 30004
SCI0251700
Transistor 30004 to 3
B-2509
WF070000
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Untitled
Abstract: No abstract text available
Text: FBA48T25280 DC-DC Converter 36-75 VDC Input; 28VDC @ 25A Output Preliminary Data Sheet Features Applications • RF Power Amplifiers • Wireless communications Benefits • • • • High efficiency Low cost Integrated metal baseplate design Higher power output at elevated temperatures and
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FBA48T25280
28VDC
ZD-02015
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Untitled
Abstract: No abstract text available
Text: SSQE48T25025 DC-DC Converter 36-75 VDC Input; 2.5 VDC, 25 A Output Data Sheet Features Applications • Telecommunications Data communications Wireless communications Servers, workstations Benefits High efficiency – no heat sink required
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SSQE48T25025
EN60950
ZD-02089
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Untitled
Abstract: No abstract text available
Text: 1. M e c h a n ic a l: 2. S c h e m a tic: o 2.5 0 n I I 2.5 0 o CN 4.50 II O •=t C\¡ 3. ELECTRICAL SPECIFICATIONS: @ 2 5 nC 3.5 0 3.50 — - 3 .30 OCL: D.33uH± 20% @ 100KH z 0.25V, OAdc Isat: 38Adc Based on 20% OCL Drop Iheaiing: 25Adc (Based on 4D*C Rise in Tem p)
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MIL-STD-202,
UL94V-0
100KHz
38Adc
25Adc
XF1Z1Z06
R33M380
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Untitled
Abstract: No abstract text available
Text: ^7 TAAA12J3A REV. S ta tu s REVISION 0 3 / 0 4 / 0 6 MP A m o rp ho u s Power Inductor CO O ' LU Ld m 2 ♦ For smoothingswitching power supplyoutput ♦ Rated Current: 25ADC ♦ Low core—loss at high frequency ♦ Amorphous iron cores with precised gap
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TAAA12J3A
25ADC
P-A4-13611
ACAD\MXFMR\A4136111
NAC-25
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Untitled
Abstract: No abstract text available
Text: 1. M echanical D im ensions: 2. Sch em atic: B 0.320 Max 3. E lectrical Specification s: 25°C Inductance: 450nH Typ ® 1KH z, DC Resistance: 1.0V, 25Adc 0.3 m O h m s Typ IDC: 25 ADC Max Isolation: 500Vac wdg to Core Notes: 1. Solderability: Leads shall meet M IL-STD -202,
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450nH
25Adc
500Vac
MIL-STD-202,
UL94V-0
E151556
XF4509mOhms
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J-STD-002B
Abstract: No abstract text available
Text: 1. M ech an ical D im en sio n s: 2. S ch e m a tic : 1 o- 19.81. Max 4 oI XFMRsj WWW CD 3 3. E le c tr ic a l S p e c ific a tio n s: - +— - 25°C - • X F 1 3 ^ 3 —1R9 OCL: 2.0u H ±15% @10KHz 0.1V OAdc 0080 1.9 0 u H ± 1 5% @1 OKHz 0.1V 25Adc DCR: 1.43mOhms Max
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XF1393-1R9
10KHz
25Adc
43m0hms
25Adc
J-STD-002B
UL94V-0
J-STD-002B
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Untitled
Abstract: No abstract text available
Text: 1. M e c h a n ic a l: 2. S c h e m a tic: o 2.50 n II 2.50 o CN 4.50 II O •=t C\¡ 3. ELECTRICAL SPECIFICATIONS: @ 2 5 nC 3.50 3.50 — - 3.30 Jl o OCL: D.33uH±20% @100KHz 0.25V, OAdc Isat: 33.2 Adc Based on 20% OCL Drop Iheaiing: 25Adc (Based on 40*C Rise in Temp)
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MIL-STD-202,
UL94V-0
100KHz
25Adc
XF1Z1Z05
R33M33Z
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ROE EB
Abstract: NS11033 fd300
Text: AŒ y ^ IP NS11033 NEW ENGLAND SEMICONDUCTOR PNP SILICON DARLINGTON POWER TRANSISTORS • • • • • • 50 AMPERE PNP DARLINGTON POWER TRANSISTOR G EN ER A L PURPO SE A M PLIFIE R LO W FR EQ U EN C Y SW ITCH ING HIGH DC C U R RE N T GAIN M O N O LITH IC CO NSTRUC TIO N
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NS11033
T0-204AE
NS11033
ROE EB
fd300
|
208H
Abstract: No abstract text available
Text: 1. M e c h a n i c a l D i m e n s i o n s : 2. S c h e m a t i c : x a XFMRS > mo CM 152 1 3 ,2 0 M ax 1 4 .0 0 M ax o- rO 3. E l e c t r i c a l X 01.30 a o Specifications: OCL: 1 .5 0 u H ± 1 5 % @ 1 0 0 K H z 0 .1 V DCR: 3 .0 Max Id c : 1 9A dc m O hm s
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MIL-STD-202G,
UL94V-0
E151556
100KHz
25Adc
Jun-19-06
Jun-19-06
208H
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High voltage fast switching power transistor pnp
Abstract: 2N6438 2n6437
Text: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Pow er PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —
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2N6437/D
2N6437
2N6438
2N6339
2N6341
High voltage fast switching power transistor pnp
2N6438
2n6437
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