Untitled
Abstract: No abstract text available
Text: C2500 Series EURO CASSETES 3 0 0 - 4 0 0 W AT T S A C / D C - D C / D C - B AT T E R Y C H A R G E R S S I N G L E O U T P U T FEATURES • • • • • • • DC input 18 V - 380 V AC input 1 or 3-phase, 47 - 400 Hz DC output 5-290V Continuous short circuit protection
|
Original
|
PDF
|
C2500
EN61373
|
44355
Abstract: ups 2581 v
Text: MITEQ AM-1367 SERIES AMPLIFIER FREQUENCY MHz 20–3000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1367 38 1.25 2.2:1 50/50 6 18 41 21 40 20 260 3 19 39 P1dB Gain (dB) 15
|
Original
|
PDF
|
AM-1367
1000staff,
44355
ups 2581 v
|
Untitled
Abstract: No abstract text available
Text: RF5117 Preliminary 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems
|
Original
|
PDF
|
RF5117
IEEE802
RF5117
05dBm,
200mAPOUT
150mA
log10
|
Untitled
Abstract: No abstract text available
Text: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems
|
Original
|
PDF
|
RF5117C
IEEE802
RF5117C
23dBm)
|
Untitled
Abstract: No abstract text available
Text: RF5117 Preliminary 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems
|
Original
|
PDF
|
IEEE802
RF5117
16-pin,
05dBm,
200mAPOUT
150mA
RF5117
log10
|
Untitled
Abstract: No abstract text available
Text: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems
|
Original
|
PDF
|
RF5117C
IEEE802
RF5117C
23dBm)
|
b137 transistor
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems
|
Original
|
PDF
|
RF5117
IEEE802
RF5117
23dBm)
b137 transistor
|
b137 transistor
Abstract: RF5117 54MBPS 2483MHz
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems
|
Original
|
PDF
|
RF5117
IEEE802
RF5117
23dBm)
b137 transistor
54MBPS
2483MHz
|
Untitled
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems
|
Original
|
PDF
|
RF5117
IEEE802
RF5117
16-pin,
23dBm)
|
Untitled
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications
|
Original
|
PDF
|
RF5117
IEEE802
RF5117
23dBm)
|
capacitor 22 pF
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications
|
Original
|
PDF
|
RF5117
IEEE802
RF5117
23dBm)
capacitor 22 pF
|
SiGe 2577
Abstract: RF5117 laptop mini pci slot pin details 54MBPS RF5117PCBA-41X 41dBm
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications
|
Original
|
PDF
|
RF5117
IEEE802
RF5117
23dBm)
SiGe 2577
laptop mini pci slot pin details
54MBPS
RF5117PCBA-41X
41dBm
|
Untitled
Abstract: No abstract text available
Text: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems
|
Original
|
PDF
|
RF5117C
IEEE802
RF5117C
23dBm)
|
Untitled
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems
|
Original
|
PDF
|
RF5117
IEEE802
RF5117
23dBm)
|
|
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER M AXIM UM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO 50 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-B ase Voltage v EBO 6.0 Vdc
|
OCR Scan
|
PDF
|
MPS6428
|
Mullard
Abstract: EBC33 ra 220 diode
Text: DOUBLE DIODE TRIO DE EBC33 M edium gain triode for use as A.F. voltage amplifier and combined with twin diodes. H EATER This valve is suitable for D C / A C operation. V„ lb 6.3 0.2 V A C A P A C IT A N C E S C ad '-k C ad'V k C a d '- a d " C ad '-g C ad"_g
|
OCR Scan
|
PDF
|
EBC33
EBC33
Mullard
ra 220 diode
|
D 2578 equivalent
Abstract: MRF1090MA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F1090M A M R F1090M B The RF Line M ic ro w av e Pulse P o w er Transistors . . . designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc
|
OCR Scan
|
PDF
|
F1090M
MRF1090MA
MRF1090MB
MRF1090M
D 2578 equivalent
|
induction heating oscillator circuit
Abstract: induction heater circuit "Power Triode" induction heating oscillator Induction heater transmitting triode 30 kw induction heater INDUCTION HEATING POWER SUPPLY Power Triode Mullard
Text: R.F. P O W E R T R iO D E TYS5-3000 R.F. power triode in silica envelope, rated for an anode dissipation o f 3.5 kW . Primarily intended as a self-excited oscillator in R.F. heating equip ment, but also suitable for use as R.F. amplifier in transmitting
|
OCR Scan
|
PDF
|
TYS5-3000
800mA)
TYS5-3000
7YS5-3000
induction heating oscillator circuit
induction heater circuit
"Power Triode"
induction heating oscillator
Induction heater
transmitting triode
30 kw induction heater
INDUCTION HEATING POWER SUPPLY
Power Triode
Mullard
|
c 2579 power transistor
Abstract: hf power transistor NPN c 2579 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.
|
OCR Scan
|
PDF
|
MRF899
c 2579 power transistor
hf power transistor NPN
c 2579 transistor
|
transistor D 2581
Abstract: ERIE CAPACITORS TYPE K ERIE CAPACITORS N5060 erie .33 400 Erie TRIMMER CAPACITOR CAPACITOR MURATA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor D e sign e d for 12.5 Volt U H F large-signal, com m on emitter, c la s s - C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. • Specified 12.5 Volt, 512 M H z Characteristics
|
OCR Scan
|
PDF
|
MRF658
transistor D 2581
ERIE CAPACITORS TYPE K
ERIE CAPACITORS
N5060
erie .33 400
Erie TRIMMER CAPACITOR
CAPACITOR MURATA
|
Philips taw 12 20
Abstract: TAW12 kiv 78 kss 210 ML1220 E707
Text: TAL 12/20 TAW 12/20 PHILIPS TRIODE for use as H*F. amplifier and oscillator TRIODE pour utilisation comme amplificatrice H*F. et oscillatrice TRIODE zur Verwendung als H*F* Verstärker und Oszil lator TAL 12/20 TAÏÏ 12/20 Cooling : forced air Refroidissement: à air forcée
|
OCR Scan
|
PDF
|
TAL12/20
TAW12/20
Philips taw 12 20
TAW12
kiv 78
kss 210
ML1220
E707
|
HA5190
Abstract: HA2-5190-2 HA-5190 5195-5 THERMALLOY 2268b
Text: Œ HA-5190, HA-5195 Wideband, Fast Settling Operational Amplifiers March1993 Features Description • Fast Settling Time 0 .1 % . 70ns • Very High Slew R a te . 200V/ns •
|
OCR Scan
|
PDF
|
h1993
HA-5190,
HA-5195
HA-5190/5195
150MHz
50ns/Div.
HA-5195
AMPLIFIER/75
HA5190
HA2-5190-2
HA-5190
5195-5
THERMALLOY 2268b
|
AS150A
Abstract: No abstract text available
Text: h a r ris S E M I C O N D U C T O R Œ HA-5190, HA-5195 " * 7 Wideband, Fast Settling Operational Amplifiers March 1993 Features Description • Fast Settling Time 0 .1 % . 70ns HA-5190/5195 are monolithic operational amplifiers
|
OCR Scan
|
PDF
|
HA-5190,
HA-5195
HA-5190/5195
150MHz
100ns/Div.
50ns/Div.
AMPLIFIER/75Q
AS150A
|
HARRIS 5195
Abstract: ha5195-5 HA2-5190-2 HA1-5195-5 HA5190 5195-5 2268B harris ha-5195 X1320
Text: HARRIS SEMICON] SECTOR blE » • 4302271 004L.743 10b « H A S HA-5190, HA-5195 33 Wideband, Fast Settling Operational Amplifiers March1993 Features • Description Fast Settling Tim * 0.1% ).70ns • Very High Slaw R a ta .200V/ns
|
OCR Scan
|
PDF
|
HA-5190,
HA-5195
00V/na
150MHz
HA-5190/5195
HGURE14.
50ns/Div.
M3QSE71
HARRIS 5195
ha5195-5
HA2-5190-2
HA1-5195-5
HA5190
5195-5
2268B
harris ha-5195
X1320
|
