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    256X4 STATIC RAM Search Results

    256X4 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HM1-6504/B Rochester Electronics LLC HM1-6504 - Standard SRAM, 256X4, 300ns, CMOS Visit Rochester Electronics LLC Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    256X4 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CAT22C12! CAT22C121 - Industrial Temperature 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM DESCRIPTION FEATURES The Catalyst CAT22C121 Nonvolatile Random Ac­ cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS


    OCR Scan     		PDF CAT22C12! CAT22C121 1024-BIT 256x4) 1024-bit 256x4 CAT22C12I

    CAT22C12

    Abstract: No abstract text available
    Text: CAT22C12 CAT22C12 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM FEATURES DESCRIPTION The Catalyst CAT22C12 Nonvolatile Random Ac­ cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS circuitry for very low power consumption. The ac­


    OCR Scan     		PDF CAT22C12 1024-BIT 256x4) CAT22C12 1024-bit 256x4

    Untitled

    Abstract: No abstract text available
    Text: A M _ S6501 I 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256x4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­


    OCR Scan     		PDF S6501 256x4) S6501 256x4-bit S6501L1, S6501L S6501L3 S6501L8

    Untitled

    Abstract: No abstract text available
    Text: STATIC CMOS RAMs, COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGE DESCRIPTION PART TAA ns PACKAGES/PINS SIZE NUMBER P J S PP 22 P93U422 35 24 256x4 1K P4C422 22 10/12/15/25/35 24 256x4 1K P4C147 18 10/12/15/20/25 4Kx1 w/Separate I/O 4K P4C148 18 10/12/15/20/25


    OCR Scan     		PDF P93U422 256x4 P4C422 P4C147 P4C148 P4C149 P4C150 P4C168 P4C169

    Untitled

    Abstract: No abstract text available
    Text: A M I _ S6501 AMERICAN 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256 x 4-bit ultra low power CMOS RAMs offers fully static operation with a single


    OCR Scan     		PDF S6501 256x4) S6501 S6501L1, S6501L S6501L3 S6501L8

    S5101L-3

    Abstract: S5101L-1
    Text: AMI S5101 AMERICAN MICROSYSTEMS. INC. 1024 BIT 256X4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S5101 family of 256x 4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­


    OCR Scan     		PDF S5101 256X4) S5101 S5101L1E S5101L1EI S5101L1C S5101L1CI S5101L1CM S5101LP S5101LE S5101L-3 S5101L-1

    S6501

    Abstract: c i S6501 S6501-8 S6501L S6501L1 S6501L3 S6501L8 256X4 CMOS RAM
    Text: S6501 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256x 4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­


    OCR Scan     		PDF S6501 256x4) S6501 S6501L1, S6501L S6501L3 S6501L8 c i S6501 S6501-8 S6501L S6501L1 S6501L3 S6501L8 256X4 CMOS RAM

    S5101L1

    Abstract: S5101L-3 S5101 s5101l s5101-8 S5101L3 S5101L-1
    Text: AMI S5101 AM ERICAN M ICR O SYST EM S, INC.I 1024 BIT 256X4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power □ Data R etention at 2V (L Version) □ Single +5 Volt Power Supply □ Completely Static Operation □ Completely TTL Compatible Inputs


    OCR Scan     		PDF S5101 256X4) S5101L1, S5101L S5101L3 S5101L8 S5101L, S5101L1 S5101L-3 s5101-8 S5101L-1

    Untitled

    Abstract: No abstract text available
    Text: Xicnr Advance Information 1KBit X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 120 ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption — Active: 40 mA Max.


    OCR Scan     		PDF X22C12 256x4 X22C12 3817FH

    HM435101

    Abstract: MCM5101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01
    Text: 8 < > MOTOROLA MCM5101 MCM51L01 256x4 BIT STATIC RAM CMOS The MCM5101 fam ily o f CMOS RAMs offers ultra low power and ful­ ly static operation w ith a single 5-volt supply. The CMOS 1024-bit devices are organized in 256 words by 4 bits. Separate data inputs and


    OCR Scan     		PDF MCM5101 MCM51L01 256x4 1024-bit MCM510TMCM51L01 l/OI111 HM435101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01

    Untitled

    Abstract: No abstract text available
    Text: w X22C12 1KB it X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability —Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption —Active: 40mA Max. — Standby: 100|jA Max.


    OCR Scan     		PDF X22C12 256x4 150ns 18-Pin 300-mil X2212 X22C12

    Untitled

    Abstract: No abstract text available
    Text: Jlaar X22C12 1KBit 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40mA Max. — Standby: 100^iA Max.


    OCR Scan     		PDF X22C12 256x4 150ns 18-Pin 300-mil X2212 X22C12 0004E11

    91L22

    Abstract: No abstract text available
    Text: it Advanced Micro Devices Am9122/Am91 L22 256x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Single 5-volt power supply — ±10% tolerance both Commercial and Military High-performance replacement for 93422/93L422 Fast access times — as low as 25 ns


    OCR Scan     		PDF Am9122/Am91 256x4 93422/93L422 Am9122/Am91L22 93422/93L422 1024-bit, OP000120 op000130 DP000140 OP000150 91L22

    co-toc

    Abstract: CERAMIC LEADLESS CHIP CARRIER 12G014-2C 12G014-2L 12G014-3C 12G014-3L 12G014-3X
    Text: /G B L? GigaBit Logic 12G014 256x4 Bit Registered, Self-Timed Static RAM 2.5 ns Cycle Time _ 12G NanoRAM Family_ FEATURES Latch mode output for fast access with extended cycle Nanosecond access and cycle times Single-ended or differential clock input


    OCR Scan     		PDF 12G014 256x4 co-toc CERAMIC LEADLESS CHIP CARRIER 12G014-2C 12G014-2L 12G014-3C 12G014-3L 12G014-3X

    Untitled

    Abstract: No abstract text available
    Text: Advance Information 1KBit X iB B X22C12 ! 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION • High Performance CMOS — 120 ns RAM Access Time • High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40 mA Max.


    OCR Scan     		PDF X22C12 256x4 18-Pin 300-mil X2212 X22C12

    93422 ram

    Abstract: No abstract text available
    Text: a Adva£ Am9122/Am91L22 256x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • High-performance replacement for 93422/93L422 Fast access times — as low as 25 ns Low-power dissipation - Low power 440 mW Commercial 495 mW (Military) • Single 5-volt power supply — ±10% tolerance both


    OCR Scan     		PDF Am9122/Am91L22 256x4 93422/93L422 1024-bit, smal122/Am91 OP000120 OP000130 OP000140 93422 ram

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY S V M I c; O N l IJ , I () K m a s io i Radiation Hard 256x4 Bit Static RAM s S10304FDS Issue 1.2 October 1990 Features • 3|im CMOS-SOS technology — — Address Butler» • Latch-up free Cell Array 32 R o m tt Columns Row Decoders (Enable)


    OCR Scan     		PDF 256x4 S10304FDS

    256X4

    Abstract: 1024x4 AM2168 Am91L22
    Text: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active


    OCR Scan     		PDF Am91L22-35 L22-45 Am9122-60 256x4 Am2147 Am2147-45 Am2147-65 Am2147-70 Am21L47-45 Am21147 1024x4 AM2168 Am91L22

    X22C12

    Abstract: 3817 X2212
    Text: Xuaip Advance Information 1K Bit X22C12 256x4 Nonvolatile Static RA M FEATURES DESCRIPTION • High P erform ance CMOS — 120 ns RAM A ccess Tim e • High R e lia b ility — S tore C ycles: 1,000,000 — Data R etention: 100 Years • Low Pow er C o nsu m ption


    OCR Scan     		PDF X22C12 256x4 18-Pin 300-mil X2212 X22C12 3817 X2212

    29C3

    Abstract: No abstract text available
    Text: TEKTRONIX IN C / TRI ÖUINT 2bE Û TQ bS lô D OOOQM?^ / I ctM L / G ig a B it L o g ic b B TR£2 12G014 256x4 Bit Registered, Self-Timed Static RAM 2.5 ns Cycle Time _ 12G NanoRAM Family_ FEATURES Nanosecond access and cycle times Fully registered architecture with 3 selectable output


    OCR Scan     		PDF 12G014 256x4 050P3 29C3

    5101-4

    Abstract: 2101 256x4
    Text: g g g # 8 8 3 /5 1 0 1 -4 256x4 Static CMOS RAM s c ie n tific Features Pin Configuration • Military Temperature Range: - 5 5 ° C t o + 125°C A3 I 1' ■ Low Power Replacement for 2101 NMOS RAMs a ■ Data retention to 2.0V ■ TrueTTL C om patibility


    OCR Scan     		PDF 256x4 800ns 5101-4 2101 256x4

    AM9101

    Abstract: P2101 am2101 AM9101CPC AM9101PC AM9101ADC AM9101BPC l01a #500 P2101-1 9101C
    Text: Am9101/Am91L01/Am2101 FAMILY 256x4 Static R /W Random A cce ss Memories PART NUMBER Am2101 Am2101-2 Am 9l01 A Am91 L01A Am2101 -1 Am 9101B Am 91L01ß Am9101C Am91 L01C Am 9101D A CCESS TIME 1000ns 650ns 500ns 400ns 300ns 250ns D IS T IN C T IV E C H A R A C T E R I S T I C S


    OCR Scan     		PDF Am9101/Am91L01/Am2101 256x4 Am2101 Am2101-2 500ns 9101B 91L01ß Am9101C 300ns AM9101 P2101 AM9101CPC AM9101PC AM9101ADC AM9101BPC l01a #500 P2101-1 9101C

    d5101l

    Abstract: PD5101L upd5101 5101L-4 mpD5101 5101L
    Text: MPD5101L SEC N E C E le c tr o n ic s U S A In c . m PD51o i h Microcomputer Division 1024 BIT 256x4 STATIC CMOS RAM DESCR I P T I O N T h e /UPD5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f


    OCR Scan     		PDF 5101L uPD5101L-1 256x4) /UPD5101L liPD5101 /UPD5101L-1 LM27S2S DCH157M //PD42S18160, d5101l PD5101L upd5101 5101L-4 mpD5101 5101L

    Untitled

    Abstract: No abstract text available
    Text: 'F 'f Z - H f niET EC A L C A TE L 45E D • fc>15ñb51 GOOOGlfl T ■ MTEC 1.5 1 CMOS Standard Cell Library MTC-800 Services Features • Silicon-Gate 1.5 Micron CMOS Technology • Fully supported by MADE • Extensive M acrocell Library • ROMs, RAMs and other


    OCR Scan     		PDF MTC-800 MTC-800