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    MSM548263

    Abstract: SOJ40 TFSC
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2L0017-17-Y1 MSM548263 MSM548263 144-Word MSM548263262 RAM256K SAM512 5128ms 40400milSOJSOJ40-P-400-1 MSM548263-xxJS SOJ40 TFSC

    WM1-DIN

    Abstract: sj256
    Text: J2L0016-17-Y1 作成：1998年 1月 MSM548262 l 前回作成：1997年 9月 ¡ 電子デバイス MSM548262 262,144-Wordx8-Bit MULTIPORT DRAM n 概要 MSM548262は262,144ワード×8ビットのダイナミックランダムアクセスメモリ（RAM）ポート


    Original     		PDF J2L001617Y1 MSM548262 144Word MSM548262 MSM548262262 RAM256K SAM512 5128ms 40400milSOJSOJ40P4001 MSM548262xxJS WM1-DIN sj256

    AS7C3512-15PC

    Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
    Text: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time


    Original     		PDF AS7C3512 AS7C3512L 32-pin AS7C3512-15PC AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465

    AS7C3512-20JC

    Abstract: AS7C3512-20PC AS7C3512-25JC AS7C3512-25PC
    Text: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 Low voltage 64K×8 CMOS SRAM Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • High speed - 20/25 ns address access time - 5/6 ns output enable access time • Very low power consumption


    Original     		PDF AS7C3512 32-pin 1-20015-A. AS7C3512 AS7C3512-20PC AS7C3512-20JC AS7C3512-25PC AS7C3512-25JC AS7C3512-20JC AS7C3512-20PC AS7C3512-25JC AS7C3512-25PC

    MSM548262

    Abstract: SOJ40 SDQ1
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2L0016-17-Y1 MSM548262 MSM548262 144-Word MSM548262262 RAM256K SAM512 5128ms 40400milSOJSOJ40-P-400-1 MSM548262-xxJS SOJ40 SDQ1

    AS7C512-20JC

    Abstract: AS7C512 AS7C512-15pc transistor sb 772 AS7C512-12JC AS7C512L-20JC ES 95 SB Plastic 32-pin 300 mil SOIC 7C256 AS7C512-12PC
    Text: High Performance 64Kx8 CMOS SRAM AS7C512 AS7C512L 64K×8 CMOS SRAM Features • Organization: 65,536 words × 8 bits • High speed - 12/15/20/25/35 ns address access time - 3/4/5/6/8 ns output enable access time • Low power consumption - Active: 688 mW max 12 ns cycle


    Original     		PDF AS7C512 AS7C512L 32-pin 7C256 7C1024 AS7C512-20JC AS7C512 AS7C512-15pc transistor sb 772 AS7C512-12JC AS7C512L-20JC ES 95 SB Plastic 32-pin 300 mil SOIC AS7C512-12PC

    GL128

    Abstract: DATA VISION LCD P72 GL112 amlcd technology LCD tv Theory data vision lcd module GRAPHICAL LCD DIAGRAM 777 green lee plasma displays Display theory 1996 twisted nematic
    Text: 48.3 / R. I. McCartney 48.3: A Liquid Crystal Display Response Time Compensation Feature Integrated into an LCD Panel Timing Controller Richard I. McCartney Displays Group, National Semiconductor, Santa Clara, California, USA Abstract The electro-optic response times of the principal LCD modes are


    Original     		PDF

    TFSC

    Abstract: cbra
    Text: J2L0017-17-Y1 作成：1998年 1月 MSM548263 l 前回作成：1997年 9月 ¡ 電子デバイス MSM548263 262,144-Wordx8-Bit MULTIPORT DRAM n 概要 MSM548263は262,144ワード×8ビットのダイナミックランダムアクセスメモリ（RAM）ポート


    Original     		PDF J2L001717Y1 MSM548263 144Word MSM548263 MSM548263262 RAM256K SAM512 5128ms 40400milSOJSOJ40P4001 MSM548263xxJS TFSC cbra

    MSM548262

    Abstract: SOJ40 MSM548262-60
    Text: J2L0016-17-Y1 作成：1998年 1月 MSM548262 l 前回作成：1997年 9月 ¡ 電子デバイス MSM548262 262,144-Wordx8-Bit MULTIPORT DRAM n 概要 MSM548262は262,144ワード×8ビットのダイナミックランダムアクセスメモリ（RAM）ポート


    Original     		PDF J2L0016-17-Y1 MSM548262 MSM548262 144-Word MSM548262262 RAM256K SAM512 5128ms 40400milSOJSOJ40-P-400-1 MSM548262-xxJS SOJ40 MSM548262-60

    SOJ40

    Abstract: MSM548263
    Text: J2L0017-17-Y1 作成：1998年 1月 MSM548263 l 前回作成：1997年 9月 ¡ 電子デバイス MSM548263 262,144-Wordx8-Bit MULTIPORT DRAM n 概要 MSM548263は262,144ワード×8ビットのダイナミックランダムアクセスメモリ（RAM）ポート


    Original     		PDF J2L0017-17-Y1 MSM548263 MSM548263 144-Word MSM548263262 RAM256K SAM512 5128ms 40400milSOJSOJ40-P-400-1 MSM548263-xxJS SOJ40

    AS7C512-20JC

    Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
    Text: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O


    OCR Scan     		PDF AS7C512 AS7C512L 64Kx8 32-pin 7C256 7C1024 AS7C512-20JC AS7C512-15pc AS7C512 10n12 AS7C512-12JC AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20

    Untitled

    Abstract: No abstract text available
    Text: High Performance 64KX8 CMOS SRAM AS7C512 AS7C512L 64KX8 CMOS SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access time - 3 / 4 / S / 6 / 8 ns output enable access tim e • Low pow er consum ption


    OCR Scan     		PDF 64KX8 AS7C512 AS7C512L 64KX8 0DDD473

    tc51864

    Abstract: No abstract text available
    Text: TOSHIBA T C 5 1 8 6 4 P L /F L S 5 /1 0 PRELIM INARY SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The


    OCR Scan     		PDF TC51864PL TC51864PL/FL-85/10 002b4Ã tc51864

    Untitled

    Abstract: No abstract text available
    Text: H i ” ¡ i !> r i ' ! i i i - 4 i \ -./• ( \ U 'is -, i; w iii u i i í í J íjl A 4 K a 8 l M U 'i ,'ili H i Features • T T L -co m p atib le, th re e -s ta te I / O • Ideal fo r cach e a n d p o rta b le c o m p u tin g • O rg a n iz a tio n : 6 5 ,5 3 6 w o r d s x 8 b its


    OCR Scan     		PDF -20015-A. AS7C3512 AS7C3512-20FC AS7C3512-20JC AS7C3512-25PC AS7C3512-2SJC J1-20015-A.

    AS7C3512-15PC

    Abstract: No abstract text available
    Text: High-Performance 64Kx8 3.3V CMOS SRAM PI AS7C3512 AS7C3512L PR E LIM IN A RY Low Voltage 64KxS CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply


    OCR Scan     		PDF 64Kx8 AS7C3512 AS7C3512L 64KxS 32-pin 00G0CH5 AS7C3512-15PC

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC51864PL/FL85/10 PR ELIM INARY SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 6 4 P L is a 5 1 2K bit high speed C M O S p se udo static RAM organized as 6 5 ,5 3 6 w o rd s by 8 bits. T h e T C 5 1 8 6 4 P L utilizes


    OCR Scan     		PDF TC51864PL/FL85/10 TC51864PL/FL-85/10

    Untitled

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n c e 6 4 K X 8 3 .3 V C M O S SR A M u II A S7C 3512 A S7C 3512L A Low voltage 6 4 K x 8 CMOS SRAM Preliminary information • • • • Organization: 65,536 w ords x 8 bits Single 3.3 ±0.3V pow er supply 5V tolerant 1/O specification


    OCR Scan     		PDF 3512L S7C3512-35PC AS7C3512L-25PC S7C3512-20JC S7C3512-25JC AS7C3512-3SJC AS7C3512L-20JC 3512-25PC S7C3512L-20PC AS7C3512-20PC

    CAW-18

    Abstract: megatron
    Text: High-Performance 64Kx8 3.3V CMOS SRAM PI ^ ¿ 9 ^ AS7C3512 AS7C3512L P R E L IM IN A R Y Low Voltage 64Kx8 CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply


    OCR Scan     		PDF AS7C3512 64Kx8 AS7C3512L 32Jose, CAW-18 megatron

    Untitled

    Abstract: No abstract text available
    Text: High-Performance 64Kx8 CMOS SRAM p i AS7C512 AS7C512L 64Kx8 CMOS SRAM Common I/O FEATURES Equal access and cycle times • Organization; 65,536 words x 8 bits • Highspeed • Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time


    OCR Scan     		PDF 64Kx8 AS7C512 AS7C512L 64Kx8 32-pin 7C256 7C1024 10Q3441

    Untitled

    Abstract: No abstract text available
    Text: H igh Perform ance A S7C 512 64KX8 A S7C 512L C M O S SRA M 64K X 8 CMOS SRAM • Organization: 65,536 words x 8 bits • High speed - 1 2 /1 5 /2 0 /2 5 /3 5 ns address access time - 3 / 4 / 5 / 6 / 8 ns output enable access time • Low pow er consumption


    OCR Scan     		PDF 64KX8 32-pin 7C256 7C1024 AS7C512L-15JC AS7C512-20JC AS7C512L-20JC AS7C512-25JC AS7C512L-25JC AS7C512-35JC

    PDIP300

    Abstract: AS7CS12-15PC ITT Industries PRODUCT GUIDE International rca 645 RCA 719 st zo 607 sv micro hq 64KX8 7C256 3935-01
    Text: H ig h P erfo rm an ce A S 7 C 5 12 64K X 8 A S 7 C 5 1 2L C M O S SRAM 6 4 K X 8 C M O S SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access tim e - 3 / 4 / S / 6 / 8 ns output enable access tim e


    OCR Scan     		PDF 64KX8 64KX8 32-pin 7C256 7C1024 T0D34MT PDIP300 AS7CS12-15PC ITT Industries PRODUCT GUIDE International rca 645 RCA 719 st zo 607 sv micro hq 3935-01