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    Untitled

    Abstract: No abstract text available
    Text: X 16/ 512K X 8 BIT preliminary 256KCMOS MASK ROM HY23V04200 Description The HY23V04200 high performance read only memory is organized either as 524,288 x 8 bit byte mode or as 262,144 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery operation. The large size of 4M bit memory density is ideal for


    Original     		PDF HY23V04200 256KCMOS HY23V04200 70/100/120ns 16bits. 40pin 40DIP

    Untitled

    Abstract: No abstract text available
    Text: M 2 7 C 2 5 6 /E 2 7C 2 5 6 256 K CMOS EPROM March 1987 Features Description • 2 5 6 K 32K x S C M O S EPROM SEEQ's27C256 is the industry’s firs t 256KCMOS EPROM. lth a s a 3 2 K x 8 organization and has very low pow er dissipation. Its active current is less


    OCR Scan     		PDF s27C256 256KCMOS MD400013/- 27C256