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    K7A801801B

    Abstract: K7A803201B K7A803601B
    Text: K7A803601B K7A803201B K7A801801B PRELIMINARY 256Kx36 & 256Kx32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark Initial draft 1. Delete pass- through


    Original     		K7A803601B K7A803201B K7A801801B 256Kx36 256Kx32 512Kx18 512Kx18-Bit K7A801801B K7A803201B K7A803601B PDF

    Untitled

    Abstract: No abstract text available
    Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with


    Original     		WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6201 PDF

    Untitled

    Abstract: No abstract text available
    Text: K7A803609B K7A803209B K7A801809B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		K7A803609B K7A803209B K7A801809B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit 119BGA 100-TQFP-1420A PDF

    MG802C256Q

    Abstract: DS06 MOSYS QFP-1420 MG802C256
    Text: MG802C256 Ultra Low Latency, High Performance MOSYS 256Kx32 SGRAM Preliminary Information Features • • • • • • • • • • • • • • • SGRAM protocol High bandwidth 100MHz-166MHz operation Reduced Latency Improved critical timing parameter limits


    Original     		MG802C256 256Kx32 100MHz-166MHz 256Kx32 100-pin MG802C256Q DS06 MOSYS QFP-1420 MG802C256 PDF

    Untitled

    Abstract: No abstract text available
    Text: K7A803601B K7A803201B K7A801801B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		K7A803601B K7A803201B K7A801801B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit PDF

    EDI8F32259V

    Abstract: No abstract text available
    Text: EDI8F32259V White Electronic 256Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION 256Kx32 bit CMOS Static RAM The EDI8F32259V is a high speed 8Mb Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ packages on an epoxy


    Original     		EDI8F32259V 256Kx32 EDI8F32259V 256Kx4 PDF

    MoSys

    Abstract: No abstract text available
    Text: MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM MOSYS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin PQFP 20 mm x 14 mm body 0.65 mm nominal pin pitch 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63


    Original     		MC803256K32, MC803256K36 256Kx32/36 133-166MHz 100-Pin MoSys PDF

    cd 5151

    Abstract: EDI8F32259V EDI8F32259V12MMC EDI8F32259V12MNC EDI8F32259V15MMC EDI8F32259V15MNC EDI8F32259V20MNC EDI8F32259V25MNC
    Text: EDI8F32259V 256Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION • 256Kx32 bit CMOS Static RAM The EDI8F32259V is a high speed 8Mb Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ packages on an epoxy


    Original     		EDI8F32259V 256Kx32 EDI8F32259V 256Kx4 cd 5151 EDI8F32259V12MMC EDI8F32259V12MNC EDI8F32259V15MMC EDI8F32259V15MNC EDI8F32259V20MNC EDI8F32259V25MNC PDF

    Untitled

    Abstract: No abstract text available
    Text: MAR 2 6 1993 256KX32SR AM m o ì a i MS32256FKX-020/025/35/45 c Issue 1.1: February 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r - Inc. Pin Definition 262,144 X 32 CMOS High Speed Static RAM


    OCR Scan     		256KX32SR MS32256FKX-020/025/35/45 020ns MS32256FKXLI-025 -35ns PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _ EDI8F32256C [piFàiyiOMOT Electronic D« tig n i Inc. High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This


    OCR Scan     		EDI8F32256C 256Kx32 EDI8F32256C 256Kx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8L32256B ELECTRONIC DESIGNS, INC 256KX32 BiCMOS SRAM 256Kx32 BiCMOS High Speed Static RAM Features The EDI8L32256B is a high speed, high performance, BiCMOS four megabit density Static RAM organized as a 256Kx32 bit BiCMOS Static 256Kx32 bit array.


    OCR Scan     		EDI8L32256B 256KX32 EDI8L32256B I8L32256B I8L32256B15A JEDECMO-47AE PDF

    Untitled

    Abstract: No abstract text available
    Text: a WHITE /MICROELECTRONICS W PSF256K32- 27P JX 1M Byte of SRAM & 1M Byte of FLASH 256Kx32 SRAM/256Kx32 FLASH M ODULE FEATURES • ■ ■ A ccess Tim es of 25ns SRAM ■ A ccess Tim es of 70ns (Rash) ■ Packaging ADVANCED * 100,000 B a se /P ro g ra m Cycles


    OCR Scan     		PSF256K32- 256Kx32 SRAM/256Kx32 512Kx16. PDF

    Untitled

    Abstract: No abstract text available
    Text: a WS256K32-XXX WHITE MICROELECTRONICS 256Kx32SRAM MODULE P R E L IM IN A R Y * FEATURES • Access Times 20, 25, 35ns 2 V D a ta Retention devices available ■ MIL-STD-883 Compliant Devices Available Commercial, Industrial and M ilitary Temperature Range


    OCR Scan     		WS256K32-XXX 256Kx32SRAM MIL-STD-883 256Kx32, 512Kx16 512Kx32 WS256K32N-XHX WS256K32-XG4X 256K32 PDF

    Untitled

    Abstract: No abstract text available
    Text: a WPS256K32-XXC M/HITE /MICROELECTRONICS 256Kx32 SRAM MODULE ADVANCED* FEATURES • Access T im e s * ■ C o m m e rc ia l T e m p e ra tu re R ange B iC M O S : 10ns ■ TTL C o m p a tib le In puts and O u tp u ts ■ 5 V o lt P o w e r S u p p ly ■


    OCR Scan     		WPS256K32-XXC 256Kx32 256K32 PDF

    Untitled

    Abstract: No abstract text available
    Text: a M/HITE /M ICRO ELECTRO N ICS 256Kx32 SRAM MODULE WPS256K32-XPJX ADVANC ED ' FEATURES • Access Tim es of 1 5 ,1 7 ,2 0 , 25ns TTL C om patible Inputs and CM OS Outputs I/O Com patible w ith 3 .3 V Devices ■ Organized as 256K x32, User Configurable as 5 1 2Kx16


    OCR Scan     		256Kx32 WPS256K32-XPJX PDF

    EDI8F32259C

    Abstract: No abstract text available
    Text: ^EDI EDI8F32259C 256KX32 SRAM Module ELECTRONIC DESIGNS. INC 256Kx32 Static RAM CMOS, High Speed Module Features 256Kx32 bit CMOS Static The EDI8F32259C is a high speed 8 megabit Static RAM Random Access Memory module organized as 256K words by 32 bits. This module is


    OCR Scan     		EDI8F32259C 1256Kx32 256Kx32 EDI8F32259CRev 12/97ECO EDI8F32259C PDF

    ET334

    Abstract: IR 37 0023 D023 EDI8M32256C DQ28-DQ31 35R4
    Text: ELECTRONIC DESIGNS INC 30E D • 3530114 W d J \ _ B * c fio n fc O titg n * I n c , • — ■— — —« — Q Q Q 0 7 Sb □ ■ EDI8M32256C . i •• 1 1 1 256KX32 Static RAM CMOS, High Speed Module ÂBVÂMCI IMFQBMÂTDON Features


    OCR Scan     		G0007Sb EDI8M32256C 256KX32 EDI8M32256C 256Kx4 inp40 35r45, A0-A17 ET334 IR 37 0023 D023 DQ28-DQ31 35R4 PDF

    TME 57

    Abstract: EDI8L32256C
    Text: ^EDI. EDI8L32256C • 256Kx32 SRAM Module ELECTRONIC DtStGNS, N C PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static


    OCR Scan     		EDI8L32256C m256Kx32 256Kx32 EDI8L32256C EDI8L32256C15AC* TME 57 PDF

    Untitled

    Abstract: No abstract text available
    Text: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP


    OCR Scan     		ED/8L322S6V 25SKx32 256KX32 21060L 21062L TMS320LC31 MO-47AE EDI8L32256V EDI8L32256V20AC PDF

    Untitled

    Abstract: No abstract text available
    Text: WS256K32-XXX H/HITE M I C R O E L E C T R O N I C S 256Kx32 SRAM MODULE PRELIMINARY* FEATURES Access Tim es 20, 25, 35ns • ■ M IL-S TD -883 C om p lian t Devices A v a ila b le ■ C om m ercial, Ind u stria l and M ilita ry T e m pe ratu re Range ■


    OCR Scan     		WS256K32-XXX 256Kx32 S256K S256K32-XG 256Kx32, 512Kx16 512Kx32 256K32 6Q2I437-1520 PDF

    MN128

    Abstract: jedec 46c
    Text: W EDI8F32259C D l electronic designs inc» 256KX32SRAM Module 256Kx32Static RAM CMOS, H itfi Speed Module Features 256Kx32 bit CMOS Static The EDI8F32259C is a high speed 8 megabit Static RAM Random Access M emory module organized as 256K words by 32 bits. This module is


    OCR Scan     		EDI8F32259C 256KX32SRAM 256Kx32 10and 256Kx32Static EDI8F32259C 256Kx4 72Pin MN128 jedec 46c PDF

    3M59

    Abstract: No abstract text available
    Text: moi EDI8M32256C E le ctro n ic D n l g i i Inc. High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module ]F O M ^ T D [ Features T h e E D I8 M 3 2 2 5 6 C is a h ig h s p e e d 8 megabit Static 256Kx32 bit C M O S Static R A M module organized a s 256K words by 32 bits. This


    OCR Scan     		EDI8M32256C 256Kx32 256Kx4 inputs11 16-DQ 20-DQ DQ28-DQ31 3M59 PDF

    Untitled

    Abstract: No abstract text available
    Text: m EDI9F33256C a 256Kx32 SRAM Module fiEC W O U C 0E96N& NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­


    OCR Scan     		0E96N& EDI9F33256C l256Kx32 256Kx32 EDI9F33256C 256Kx4 F33256C PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8F32256C 256Kx32 SRAM Module ELECTRONIC DESIGNS, INC. | Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and 12ns CMOS: 15,20,25, and 35ns • Individual Byte Selects • Fully Static, No Clocks


    OCR Scan     		256Kx32 EDI8F32256C EDI8F32256C 256Kx4 PDF